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| Advance Product Information April 7, 2003 Lange Coupler Set TGB2001-EPU TGB4001-EPU TGB4002-EPU Key Features and Performance * * * * * Very Low Loss (<0.25dB Typical) High Power 1W 50W Termination Broadband 3dB Power Split Chip dimensions: 1.0 x 3.0 x 0.1 mm (40 x 120 x 4 mils) 3 sizes Cover 12GHz - 45GHz TGB2001 12-21GHz TGB4001 18-32GHz TGB4002 27-45GHz Primary Applications * Power Combining Preliminary Measured Data TGB2001 -2 Direct Coupled 0.00 -0.25 TGB2001 Back-to-Back S21 (dB) S21 (dB) -3 -0.50 -0.75 -1.00 -1.25 -4 -5 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 -1.50 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 Frequency (GHz) Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com 1 Advance Product Information April 7, 2003 TGB2001-EPU TGB4001-EPU TGB4002-EPU TABLE I MAXIMUM RATINGS Symbol PIN TM TSTG 1/ Parameter 1/ Input Continuous Wave Power Mounting Temperature (30 Seconds) Storage Temperature Value TBD dBm 320 C -65 to 150 C 0 0 Notes These ratings represent the maximum operable values for this device. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com 2 Advance Product Information April 7, 2003 Typical Fixtured Performance TGB2001 -2 -2.5 TGB2001-EPU TGB4001-EPU TGB4002-EPU Direct Coupled S21 (dB) -3 -3.5 -4 -4.5 -5 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 Frequency (GHz) TGB2001 Back-to-Back 0.00 -0.25 S21 (dB) -0.50 -0.75 -1.00 -1.25 -1.50 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com 3 Advance Product Information April 7, 2003 Mechanical Drawing TGB2001-EPU TGB2001-EPU TGB4001-EPU TGB4002-EPU Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com 4 Advance Product Information April 7, 2003 Mechanical Drawing TGB4001-EPU TGB2001-EPU TGB4001-EPU TGB4002-EPU Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com 5 Advance Product Information April 7, 2003 Mechanical Drawing TGB4002-EPU TGB2001-EPU TGB4001-EPU TGB4002-EPU Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com 6 Advance Product Information April 7, 2003 TGB2001-EPU TGB4001-EPU TGB4002-EPU Assembly Process Notes Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300C. (30 seconds maximum) An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: * * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire. Maximum stage temperature is 200C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com 7 |
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