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| Advanced Product Information March 7, 2003 Wideband Dual Stage VPIN Limiter Key Features * * * * * * * TGL2201-EPU 3-25 GHz Passive, High Isolation Limiter Low Loss < 0.5 dB , X-band Good Return Loss > 15 dB Flat Leakage < 18 dBm Input Power CW Survivability > 5W Integrated DC Block on both input and output Chip Dimensions: 1.1 x 1.1 x 0.1 mm Primary Applications * * Military Radar LNA Receiver Chain Protection Fixtured Measured Performance 0.0 -0.5 0 -3 Insertion Loss (dB) -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 0 3 6 9 12 15 18 21 24 27 30 -9 -12 -15 -18 -21 -24 Frequency (GHz) 26 24 Data taken @ 10 GHz Output Power (dBm) 22 20 18 16 14 12 10 8 9 12 15 18 21 24 27 30 33 36 Input Power (dBm) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. Return Loss (dB) -1.0 -6 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 1 Advanced Product Information March 7, 2003 TGL2201-EPU TABLE I MAXIMUM RATINGS Symbol PIN TM TSTG Parameter 1/ Input Continuous Wave Power Mounting Temperature (30 Seconds) Storage Temperature Value 37 dBm 320 C -65 to 150 C 0 0 1/ These ratings represent the maximum operable values for this device TABLE II DC CHARACTERISTICS (TA = 25 C) Symbol FWD_RES (D1, D2, D3, D4) VREV(D1,D4) Parameter Resistance Forward Reverse Voltage Limit Min Max 1.9 -60 3.9 -30 Units Ohm V TABLE III RF CHARACTERISTICS (TA = 25 C) Symbol IL IRL ORL PWR Parameter Insertion Loss Input Return Loss Output Return Loss Output Power @ Pin = 27 dBm Test Condition Min F = 4-20 GHz F = 4-20 GHz F = 4-20 GHz F = 6.0 GHz F = 16.0 GHz -12 12 --- Limit Typ 0.5 ----- Units Max 1.0 --20 20 dB dB dB dBm dBm Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 2 Advanced Product Information March 7, 2003 TGL2201-EPU High Isolation Limiter Assembly RF In RF Out DC Schematic Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 3 Advanced Product Information March 7, 2003 TGL2201-EPU Mechanical Drawing GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 4 Advanced Product Information March 7, 2003 TGL2201-EPU Assembly Process Notes Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C for 30 sec An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Maximum stage temperature is 200 C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 5 |
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