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| MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM3742-35SL TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 35.0dBm Single Carrier Level n HIGH POWER P1dB=45.5dBm at 3.7GHz to 4.2GHz n HIGH GAIN G1dB=10.0dB at 3.7GHz to 4.2GHz n BROAD BAND INTERNALLY MATCHED n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise SYMBOL P1dB G1dB IDS1 G CONDITIONS UNIT dBm dB A dB % dBc A C MIN. 45.0 9.0 -42 TYP. MAX. 45.5 10.0 8.0 40 -45 8.0 9.0 0.8 9.0 100 VDS= 10V f = 3.7 to 4.2GHz add IM3 Two Tone Test Po=35.0dBm (Single Carrier Level) (VDS X IDS + Pin - P1dB) X Rth(c-c) IDS2 Tch Recommended Gate Resistance(Rg) : 28 (Max.) ELECTRICAL CHARACTERISTICS ( Ta= 25C ) CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL gm VGSoff IDSS VGSO Rth(c-c) CONDITIONS VDS= 3V IDS= 10.5A VDS= 3V IDS= 140mA VDS= 3V VGS= 0V IGS= -420A Channel to Case UNIT mS V A V C/W MIN. -1.0 -5 TYP. 6500 -2.5 20 1.0 MAX. -4.0 26 1.3 u The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. Jun., 2006 TIM3742-35SL ABSOLUTE MAXIMUM RATINGS ( Ta= 25C ) CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 C) Channel Temperature Storage Temperature SYMBOL VDS VGS IDS PT Tch Tstg UNIT V V A W C C RATING 15 -5 20 115.4 175 -65 to +175 PACKAGE OUTLINE (2-16G1B) 0.70.15 4 - C1.0 (1) Unit in mm 2.5 MIN. (1) Gate (2) Source (3) Drain (2) (2) (3) 20.40.3 0.1 -0.05 24.5 MAX. 16.4 MAX. +0.1 2.5 MIN. 2.60.3 17.40.4 8.00.2 0.2 MAX. 1.40.3 HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260C. 2 2.40.3 5.5 MAX. TIM3742-35SL RF PERFORMANCES Output Power (Pout) vs. Frequency VDS=10V IDS8.0A Pin=35.5dBm Pout(dBm) 46 45 44 3.6 3.7 3.8 3.9 4.0 4.1 4.2 4.3 Frequency(GHz) Output Power(Pout) vs. Input Power(Pin) freq.=4.2GHz VDS=10V 46 80 Pout Pout(dBm) 44 70 60 50 42 add 40 30 40 20 10 30 32 34 36 Pin(dBm) 3 add(%) TIM3742-35SL Power Dissipation(PT) vs. Case Temperature(Tc) 120 100 PT(W) 80 60 40 20 0 40 80 120 160 200 Tc( C ) IM3 vs. Power Characteristics -10 VDS=10V IDS8.0A -20 freq.=4.2GHz f=5MHz -30 IM3(dBc) -40 -50 -60 30 32 34 36 38 40 Pout(dBm) @Single carrier level 4 |
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