 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWERT P1dB=39.5dBm at 5.3GHz to 5.9GHz n HIGH GAIN G1dB=9.0dB at 5.3GHz to 5.9GHz TIM5359-8SL PRELIMINARY n BROAD BAND INTERNALLY MATCHED n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25 C ) CHARACTERISTICS SYMBOL CONDITION Output Power at 1dB P1dB Compression Point VDS= 10V Power Gain at 1dB G1dB f= 5.3 to 5.9GHz Compression Point Drain Current IDS1 Gain Flatness G add Power Added Efficiency rd 3 Order Intermodulation IM3 Distortion NOTE Drain Current IDS2 Tch Channel Temperature Rise VDS X IDS X Rth(c-c) NOTE : Two Tone Test, Po=28.5dBm (Single Carrier Level) UNIT dBm dB A dB % dBc A C MIN. 38.5 8.0 -42 TYP. MAX. 39.5 9.0 2.2 35 -45 2.2 2.6 0.6 2.6 80 ELECTRICAL CHARACTERISTICS ( Ta= 25 C ) CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL CONDITION VDS= 3V IDS= 3.0A VDS= 3V IDS= 30mA VDS= 3V VGS= 0V IGS= -100A Channel to Case UNIT mS V A V C/W Gm VGSoff IDSS VGSO Rth(c-c) MIN. -1.0 -5 TYP. 1800 -2.5 5.2 2.5 MAX. -4.0 7.0 3.8 u The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Jun. 2002 TIM5359-8SL ABSOLUTE MAXIMUM RATINGS ( Ta= 25 C ) CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 C) Channel Temperature Storage Temperature SYMBOL VDS VGS IDS PT Tch Tstg UNIT V V A W C C RATING 15 -5 7.0 37.5 175 -65 to +175 PACKAGE OUTLINE (2-11D1B) 0.6 0.15 Unit in mm 4.0 MIN. 4-C1.2 * 12.9 0.2 3.2 0.3 * Gate Source Drain 17 0.3 21 0.2 11.0 MAX. +0.1 0.1 -0.05 HANDLING PRECAUTIONS FOR PACKAGED TYPE Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260C. 2 1.6 0.3 2.6 0.3 12 0.2 MAX. 5.0 MAX. 4.0 MIN. |
Price & Availability of TIM5359-8SL
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |