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| oH VE S CO AV R M AI SIO PL LA N IA BL S NT E TISP6NTP2B QUAD FORWARD-CONDUCTING BUFFERED P-GATE THYRISTORS *R TISP6NTP2B Programmable Protector Overvoltage Protection for ISDN DC Feeds: - Supply Voltages Down to -120 V - Low 5 mA max. Gate Triggering Current - High 150 mA min. (25 C) Holding Current Rated for Common Impulse Waveforms D Package (Top View) K1 G1,G2 G3,G4 ITSP A 20 25 60 70 1 2 3 4 8 7 6 5 K2 A A K4 MDRXAM Voltage Impulse Form 10/1000 s 10/700 s 1.2/50 s 2/10 s Current Impulse Shape 10/1000 s 5/310 s 8/20 s 2/10 s K3 Device Symbol K1 .............................................. UL Recognized Component G1,G2 Description The TISP6NTP2B has an array of four buffered P-gate forward conducting thyristors with twin commoned gates and a common anode connection. Each thyristor cathode has a separate terminal connection. An antiparallel anode-cathode diode is connected across each thyristor. The buffer transistors reduce the gate supply current. In use, the cathodes of an TISP6NTP2B thyristors are connected to the four conductors to be protected (see Figure 2 and Figure 3). Each gate is connected to the appropriate negative voltage feed. The anode of the TISP6NTP2B is connected to the system common. The TISP6NTP2B is in an 8-pin small-outline surface mount package. Positive overvoltages are clipped to common by forward conduction of the TISP6NTP2B antiparallel diode. In Figure 2, a negative overvoltage draws a current through the 6.8 resistor and the voltage developed triggers the thyristor on. In Figure 3, negative overvoltages are initially clipped close to the negative supply by emitter follower action of the TISP6NTP2B buffer transistor. If sufficient clipping current flows, the TISP6NTP2B thyristor will regenerate and switch into a low voltage on-state condition. As the negative overvoltage subsides, the high holding current of the TISP6NTP2B prevents d.c. latchup. K2 A A K3 G3,G4 K4 SDRXAI How To Order For Standard Termination Finish Order As For Lead Free Termination Finish Order As TISP6NTP2BDR-S TISP6NTP2BD-S Carrier Tape and Reel TISP6NTP2BDR TISP6NTP2B D, Small-Outline Tube TISP6NTP2BD *RoHS Directive 2002/95/EC Jan 27 2003 including Annex JUNE 1998 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. Device Package TISP6NTP2B Programmable Protector Absolute Maximum Ratings, TA = 25 C (Unless Otherwise Noted) Rating Repetitive peak off-state voltage, IG = 0 Repetitive peak gate-cathode voltage, VKA = 0 Non-repetitive peak on-state pulse current, (see Notes 1 and 2) 10/1000 s (Bellcore GR-1089-CORE, Issue 1, November 1994, Section 4) 0.2/310 s (I3124, open-circuit voltage wave shape 0.5/700 s) 5/310 s (ITU-T K.20 & K.21, open-circuit voltage wave shape 10/700 s) 8/20 s (IEC 61000-4-5:1995, open-circuit voltage wave shape 1.2/50 s) 2/10 s (Bellcore GR-1089-CORE, Issue 1, November 1994, Section 4) Non-repetitive peak on-state current, 50/60 Hz, (see Notes 1 and 2) 100 ms 1s 5s 300 s 900 s Non-repetitive peak gate current, 1/2 s pulse, cathodes commoned (see Note 1) Operating free-air temperature range Junction temperature Storage temperature range ITSM 7 2.7 1.5 0.45 0.43 25 -40 to +85 -40 to +150 -65 to +150 A ITSP 20 25 25 60 70 A Symbol VDRM VGKRM Value -130 -120 Unit V V IGSM TA TJ Tstg A C C C NOTES: 1. Initially the protector must be in thermal equilibrium. The surge may be repeated after the device returns to its initial conditions. 2. These non-repetitive rated currents are peak values for either polarity. The rated current values may be applied to any cathodeanode terminal pair. Additionally, all cathode-anode terminal pairs may have their rated current values applied simultaneously (in this case the anode terminal current will be four times the rated current value of an individual terminal pair). Recommended Operating Conditions Min. R1, R2 Series resistor for ITU-T recommendation K.20 Seeries resistor for ITU-T recommendation K.21 12 20 Typ. Max. Unit Electrical Characteristics for any Section, TA = 25 C (Unless Otherwise Noted) Parameter ID VF IH IGKS IGAT Off-state current Forward voltage Holding current Gate reverse current Gate reverse current, on state Gate reverse current, forward conducting state Gate trigger current Gate trigger voltage VD = VDRM, IG = 0 IF = 0.6 A, t w = 500 s, VGG = -50 V IF = 18 A, t w = 500 s, VGG = -50 V IT = -1 A, di/dt = 1A/ms, VGG = -50 V, TJ = 85 C VGG = VGKRM, VAK = 0 IT = -0.6 A, t w = 500 s, VGG = -50 V TJ = 25 C TJ = 85 C -150 -5 -50 -1 Test Conditions TJ = 25 C TJ = 85 C Min. Typ. Max. -5 -50 3 5 Unit A A V mA A A mA IGAF IGT VGT IF = 0.6 A, t w = 500 s, VGG = -50 V IT = -5 A, t p(g) 20 s, VGG = -50 V IT = -5 A, t p(g) 20 s, VGG = -50 V -40 5 2.5 mA mA V JUNE 1998 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP6NTP2B Programmable Protector Electrical Characteristics for any Section, TA = 25 C (Unless Otherwise Noted) (continued) Parameter CAK Anode-cathode offstate capacitance Test Conditions f = 1 MHz, Vd = 1 V, IG = 0, (see Note 3) VD = -3 V VD = -50 V Min. Typ. Max. 100 60 Unit pF pF NOTE 3: These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured device terminals are a.c. connected to the guard terminal of the bridge. Thermal Characteristics Parameter R JA Junction to free air thermal resistance Test Conditions Ptot = 0.52 W, TA = 85 C, 5 cm2, FR4 PCB Min. Typ. Max. 160 Unit C/W JUNE 1998 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP6NTP2B Programmable Protector Parameter Measurement Information PR IN C IPA L TER MIN A L V-I C H AR A C TER ISTIC +i I FSP (= |I TSP |) Q uadran t I Forw ard C onduction C haracteristic G AT E TR AN SFER C H AR A C TER ISTIC +i K I FSM (= |I TSM |) IF VF V G K (B O ) V GG VD ID IG T +v -i G IG A F +i G IF -v I (B O ) IS IH VT IT I TSM IG IG A T IT V (BO) VS Q uadran t III Sw itchin g C haracteristic I TSP -i P M6X AIA IK -i K Figure 1. Principal Terminal And Gate Transfer Characteristics JUNE 1998 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP6NTP2B Programmable Protector APPLICATIONS INFORMATION R1A t R1B t NUMBER OF NEGATIVE CLAMP DIODES DEPENDS ON "0V" POTENTIAL "0 V" ELECTRONIC SOURCE ELECTRONIC SINK 6.8 -VE TISP6NTP2B TWIN ISDN POWER SUPPLY NEGATIVE SUPPLY -VE ELECTRONIC SINK ELECTRONIC SOURCE R2B t R2A t 6.8 "0 V" Figure 2. Protection of Two ISDN Power Feeds JUNE 1998 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP6NTP2B Programmable Protector APPLICATIONS INFORMATION R1A -VE t R ELECTRONIC SINK 0 t R1B -VE t R RESISTOR "R" MAY BE NEEDED IF SINK HAS INTERNAL CLAMP DIODE ISDN POWER SUPPLY ELECTRONIC SINK 0 t R2A -VE t ELECTRONIC SINK R 0 t R2B -VE t R ELECTRONIC SINK 0 t NEGATIVE SUPPLY TISP6NTP2B Figure 3. Protection of Four ISDN Power Feeds JUNE 1998 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP6NTP2B Programmable Protector MECHANICAL DATA D008 Plastic Small-outline Package This small-outline package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. D008 4.80 - 5.00 (0.189 - 0.197) 8-pin Small Outline Microelectronic Standard Package MS-012, JEDEC Publication 95 8 7 6 5 5.80 - 6.20 (0.228 - 0.244) INDEX 3.81 - 4.00 (0.150 - 0.157) 1 2 3 4 1.35 - 1.75 (0.053 - 0.069) 7 NOM 3 Places 0.25 - 0.50 x 45 N0M (0.010 - 0.020) 4.60 - 5.21 (0.181 - 0.205) 0.102 - 0.203 (0.004 - 0.008) 0.28 - 0.79 (0.011 - 0.031) 0.36 - 0.51 (0.014 - 0.020) 8 Places Pin Spacing 1.27 (0.050) (see Note A) 6 places 0.190 - 0.229 (0.0075 - 0.0090) 7 NOM 4 Places 44 0.51 - 1.12 (0.020 - 0.044) DIMENSIONS ARE: MILLIMETERS (INCHES) NOTES: A. B. C. D. Leads are within 0.25 (0.010) radius of true position at maximum material condition. Body dimensions do not include mold flash or protrusion. Mold flash or protrusion shall not exceed 0.15 (0.006). Lead tips to be planar within 0.051 (0.002). MDXXAAC JUNE 1998 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP6NTP2B Programmable Protector MECHANICAL DATA D008 Tape DImensions D008 Package (8-pin Small Outline) Single-Sprocket Tape 3.90 - 4.10 (.154 - .161) 1.50 - 1.60 (.059 - .063) 7.90 - 8.10 (.311 - .319) 1.95 - 2.05 (.077 - .081) 0.8 MIN. (0.03) 0.40 (0.016) 5.40 - 5.60 (.213 - .220) 11.70 - 12.30 (.461 - .484) 6.30 - 6.50 (.248 - .256) o 1.50 MIN. (.059) 0 MIN. Cover Tape Carrier Tape Embossment Direction of Feed 2.0 - 2.2 (.079 - .087) DIMENSIONS ARE: MILLIMETERS (INCHES) NOTES: A. Taped devices are supplied on a reel of the following dimensions:Reel diameter: Reel hub diameter: Reel axial hole: 330 +0.0/-4.0 (12.992 +0.0/-.157) 100 2.0 (3.937 .079) 13.0 0.2 (.512 .008) MDXXATB B. 2500 devices are on a reel. "TISP" is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office. "Bourns" is a registered trademark of Bourns, Inc. in the U.S. and other countries. JUNE 1998 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. |
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