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| TSM4835 30V P-Channel Enhancement Mode MOSFET Pin assignment: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain VDS = - 30V RDS (on), Vgs @ - 10V, Ids @ - 9.5A =18m RDS (on), Vgs @ - 4.5V, Ids @ - 7.5A =30m Features Advanced trench process technology High density cell design for ultra low on-resistance High gate voltage Block Diagram Ordering Information Part No. TSM4835CS Packing Tape & Reel Package SOP-8 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V. Pulsed Drain Current, VGS @4.5V Maximum Power Dissipation Ta = 25 C Ta > 25 oC Operating Junction Temperature Operating Junction and Storage Temperature Range TJ TJ, TSTG o Symbol VDS VGS ID IDM PD Limit - 30 25 - 9.5 - 50 2.5 1.6 +150 - 55 to +150 Unit V V A A W W o o C C Thermal Performance Parameter Junction to Ambient Thermal Resistance (PCB mounted) Note: Surface mounted on FR4 board t<=5sec. Symbol Rja Limit 50 Unit o C/W TSM4835 1-5 2003/12 rev. A Electrical Characteristics Ta = 25 C, unless otherwise noted Parameter Conditions Symbol Min Typ Max Unit o Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage Forward Transconductance VGS = 0V, ID = - 250uA VGS = - 10V, ID = -9.5A VGS = - 4.5V, ID = -7.5A VDS = VGS, ID = - 250uA VDS = - 30V, VGS = 0V VGS = 25V, VDS = 0V VDS = - 15V, ID = - 8A VDS = - 15V, ID = - 4.6A, Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage IS = - 2.1A, VGS = 0V IS VSD ---- 0.77 - 2.1 - 1.2 A V VDS = - 15V, VGS = 0V, f = 1.0MHz VDD = - 15V, RL = 15, ID = - 1A, VGEN = - 10V, RG = 6 VGS = - 5V VDS = - 15V, ID = - 4.6A, VGS = - 10V Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Qg ----------54 8.5 10.3 24 12 78 37 2520 490 330 60 --30 30 120 80 ---pF nS BVDSS RDS(ON) RDS(ON) VGS(TH) IDSS IGSS gfs - 30 ---1 -----13 22 ---22 23 -18 30 -3 - 1.0 100 -34 nC V uA nA S V m Dynamic Note : pulse test: pulse width <=300uS, duty cycle <=2% TSM4835 2-5 2003/12 rev. A Typical Characteristics Curve (Ta = 25 oC unless otherwise noted) TSM4835 3-5 2003/12 rev. A Electrical Characteristics Curve (continued) TSM4835 4-5 2003/12 rev. A SOP-8 Mechanical Drawing A SOP-8 DIMENSION DIM MILLIMETERS MIN 4.80 3.80 1.35 0.35 0.40 MAX 5.00 4.00 1.75 0.49 1.25 INCHES MIN 0.189 0.150 0.054 0.014 0.016 MAX 0.196 0.157 0.068 0.019 0.049 16 9 B P A B C D F G K M F 1 8 G C D K M R 1.27 (typ) 0.10 0.25 0o 5.80 0.25 7o 6.20 0.50 0.05 (typ) 0.004 0.009 0o 0.229 0.010 7o 0.244 0.019 P R TSM4835 5-5 2003/12 rev. A |
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