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| TSM55N03 Pin assignment: 1. Gate 2. Drain 3. Source Preliminary N-Channel Enhancement Mode MOSFET VDS = 25V ID = 55A RDS (on), Vgs @ 10V, Ids @ 30A = 6m RDS (on), Vgs @ 4.5V, Ids @ 30A = 9m Features Advanced trench process technology High Density Cell Design for Ultra Low On-Resistance Improved Shoot-Through FOM Fully Characterized Avalanche Voltage and Current Specially Designed for DC/DC Converters and Motor Drivers Block Diagram Ordering Information Part No. TSM55N03CP Packing Tape & Reel Package TO-252 Absolute Maximum Rating (TA = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Single Pulse Drain to Source Avalanche Energy (VDD = 100V, VGS=10V, IAS=2A, L=10mH, RG=25) TA = 25 oC TA = 75 C o Symbol VDS VGS ID IDM PD TJ TJ, TSTG EAS Limit 25 20 55 350 70 42 +150 - 55 to +150 300 Unit V V A W W/oC o o C C mJ Thermal Performance Parameter Lead Temperature (1/8" from case) Junction-to-case Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Note: 1. Maximum DC current limited by the package 2. 1-in2 2oz Cu PCB board Symbol TL Rjc Rja Limit 10 1.8 40 Unit S o C/W TSM55N03 1-3 2005/04 rev. B Electrical Characteristics TJ = 25 oC, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage Gate Resisrance Forward Transconductance Conditions Symbol Min Typ Max Unit VGS = 0V, ID = 250uA VGS = 4.5V, ID = 30A VGS = 10V, ID = 30A VDS = VGS, ID = 250uA VDS = 25V, VGS = 0V VGS = 20V, VDS = 0V BVDSS RDS(ON) RDS(ON) VGS(TH) IDSS IGSS Rg 30 --1.0 ----- -7.5 4.5 1.6 ----- -9.0 6.0 3.0 1.0 100 --- V m m V uA nA VDS =15V, ID = 15A gfs S Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 15V, ID = 25A, VGS = 10V Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss ----------26 6.0 5.0 17 3.5 40 6.0 2134 343 134 ----------pF nS nC VDD = 15V, RL = 15, ID = 1A, VGEN = 10V, RG = 6 VDS = 15V, VGS = 0V, f = 1.0MHz Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage IS = 20A, VGS = 0V Note: 1. pulse test: pulse width <=300uS, duty cycle <=2% 2. Negligible, Dominated by circuit inductance. IS VSD ---0.85 20 1.3 A V TSM55N03 2-3 2005/04 rev. B TO-252 Mechanical Drawing J A E F DIM A B C D E F G H I J TO-252 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 6.570 6.840 0.259 0.269 9.250 10.400 0.364 0.409 0.550 0.700 0.022 0.028 2.560 2.670 0.101 0.105 2.300 2.390 0.090 0.094 0.490 0.570 0.019 0.022 1.460 1.580 0.057 0.062 0.520 5.340 1.460 0.570 5.550 1.640 0.020 0.210 0.057 0.022 0.219 0.065 I B G D C H TSM55N03 3-3 2005/04 rev. B |
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