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TSML1000 / 1020 / 1030 / 1040
Vishay Semiconductors
High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs
Description
TSML1000 series are high efficiency infrared emitting diodes in GaAlAs on GaAs technology molded in clear SMD package. This technology represents best performance for radiant power under pulse conditions, forward voltage and reliability.
TSML1000
TSML1020
TSML1030
TSML1040
Features
* Outstanding high radiant power * Low forward voltage * * * * * * * Suitable for high pulse current operation Angle of half intensity = 12 Peak wavelength p = 950 nm High reliability Matched Phototransistor series: TEMT1000 Versatile terminal configurations Lead-free component
16852
* Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
Applications
For remote control Photointerrupters Punched tape readers Encoder
Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified Parameter Reverse Voltage Forward current Peak Forward Current Surge Forward Current Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/ Ambient t 5 sec tp/T = 0.5, tp = 100 s tp = 100 s Test condition Symbol VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA Value 5 100 200 1.0 190 100 - 40 to + 85 - 40 to + 100 <260 400 Unit V mA mA A mW C C C C C
Basic Characteristics
Tamb = 25 C, unless otherwise specified Tamb = 25 C, unless otherwise specified Parameter Forward Voltage Temp. Coefficient of VF Test condition IF = 20 mA, tp = 20 ms IF = 1 A, tp = 100 s IF = 1 mA Symbol VF VF TKVF Min Typ. 1.2 2.6 - 1.85 Max 1.5 Unit V V mV/K
Document Number 81033 Rev. 1.8, 08-Mar-05
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TSML1000 / 1020 / 1030 / 1040
Vishay Semiconductors
Parameter Reverse Current Junction capacitance Radiant Intensity Radiant Power Temp. Coefficient of e Angle of Half Intensity Peak Wavelength Spectral Bandwidth Temp. Coefficient of p Rise Time Fall Time Virtual Source Diameter IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA VR = 5 V VR = 0 V, f = 1 MHz, E = 0 IF = 20 mA, tp = 20 ms IF = 100 mA, tp = 20 ms IF = 20 mA Test condition Symbol IR Cj Ie e TKe p TKp tr tf 3 25 7 35 - 0.6 12 950 50 0.2 800 800 1.2 15 Min Typ. Max 10
VISHAY
Unit A pF mW/sr mW %/K deg nm nm nm/K ns ns mm
Typical Characteristics (Tamb = 25 C unless otherwise specified)
200
PV - Power Dissipation ( mW )
10000
I F - Forward Current ( mA )
180 160 140 120 100 80 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 T amb - Ambient Temperature ( C )
0.1 1000 0.2 100 0.5 1.0
0.05
0.02
tp / T = 0.01
10 0.01
14335
0.10
1.00
10.00
100.00
16187
t p - Pulse Duration ( ms )
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 3. Pulse Forward Current vs. Pulse Duration
10 4
120 100 80 60 40 20 0 0
16188
I F - Forward Current ( mA )
I F - Forward Current ( mA )
10 3
10 2
t p = 100 s tp / T = 0.001
10 1
10 0
10 20 30 40 50 60 70 80 90 100
13600
0
1
2
3
4
T amb - Ambient Temperature ( C )
V F - Forward Voltage ( V )
Figure 2. Forward Current vs. Ambient Temperature
Figure 4. Forward Current vs. Forward Voltage
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Document Number 81033 Rev. 1.8, 08-Mar-05
VISHAY
TSML1000 / 1020 / 1030 / 1040
Vishay Semiconductors
1.2
V Frel - Relative Forward Voltage
1.6
1.1
I e rel ; e rel
1.2 I F = 10 mA I F = 20 mA 0.8
1.0 0.9
0.4 0.8 0.7 0 20 40 60 80 100
94 7993
0 -10 0 10
50
100
140
94 7990
T amb - Ambient Temperature ( C )
T amb - Ambient Temperature ( C )
Figure 5. Relative Forward Voltage vs. Ambient Temperature
Figure 8. Rel. Radiant Intensity/Power vs. Ambient Temperature
1000
e rel - Relative Radiant Power I e - Radiant Intensity ( mW/sr )
1.25 1.0
100
0.75 0.5
10
1
0.25 I F = 100 mA 0 900 950 - Wavelength ( nm ) 1000
0.1 10 0
16189
10 1 10 2 10 3 I F - Forward Current ( mA )
10 4
94 7994
Figure 6. Radiant Intensity vs. Forward Current
Figure 9. Relative Radiant Power vs. Wavelength
1000
e - Radiant Power ( mW )
0
10
20 30
100
Srel - Relative Intensity
40 1.0 0.9 0.8 0.7 50 60 70 80
10
1
0.1 10 0
13602
10 1 10 2 10 3 I F - Forward Current ( mA )
10 4
18234
0.6
0.4
0.2
0
0.2
0.4
0.6
Figure 7. Radiant Power vs. Forward Current
Figure 10. Relative Radiant Intensity vs. Angular Displacement
Document Number 81033 Rev. 1.8, 08-Mar-05
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TSML1000 / 1020 / 1030 / 1040
Vishay Semiconductors
Package Dimensions in mm TSML1000
VISHAY
16159
Package Dimensions in mm TSML1020
16160
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Document Number 81033 Rev. 1.8, 08-Mar-05
VISHAY
Package Dimensions in mm TSML1030
TSML1000 / 1020 / 1030 / 1040
Vishay Semiconductors
16228
Package Dimensions in mm TSML1040
16760
Document Number 81033 Rev. 1.8, 08-Mar-05
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TSML1000 / 1020 / 1030 / 1040
Vishay Semiconductors Reel Dimensions
VISHAY
18033
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Document Number 81033 Rev. 1.8, 08-Mar-05
VISHAY
Taping TSML1000
TSML1000 / 1020 / 1030 / 1040
Vishay Semiconductors
18030
Taping TSML1020
18031
Document Number 81033 Rev. 1.8, 08-Mar-05
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TSML1000 / 1020 / 1030 / 1040
Vishay Semiconductors Taping TSML1030
VISHAY
18032
Precautions For Use
1. Over-current-proof Customer must apply resistors for protection, otherwise slight voltage shift will cause big current change (Burn out will happen). 2. Storage 2.1 Storage temperature and rel. humidity conditions are: 5 C to 35 C, R.H. 60 % 2.2 Floor life must not exceed 168 h, acc. to JEDEC level 3, J-STD-020. Once the package is opened, the products should be used within a week. Otherwise, they should be kept in a damp proof box with desiccant. Considering tape life, we suggest to use products within one year from production date. 2.3 If opened more than one week in an atmosphere 5 C to 35 C, R.H. 60 %, devices should be treated at 60C 5C for 15 hrs. 2.4 If humidity indicator in the package shows pink color (normal blue), then devices should be treated with the same conditions as 2.3
Reflow Solder Profile
260 240 220
Temperature ( C )
200 180 160 140 120 100 80 60 0
+ 5 C/s
- 5 C/s
60 s to 120 s 5s
20 40 60 80 100 120 140 160 180 200 220 Time ( s )
17172
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Document Number 81033 Rev. 1.8, 08-Mar-05
VISHAY
TSML1000 / 1020 / 1030 / 1040
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 81033 Rev. 1.8, 08-Mar-05
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Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000 Revision: 08-Apr-05
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