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Datasheet File OCR Text: |
Small Signal Transistor Arrays UNA0206 (UN206) Transistor array to drive the small motor s Features q q q q Small and lightweight Low power consumption (low VCE(sat) transistor used) Protective diode incorporated (C-E monolithic) Low-voltage drive Unit: mm 5 0.40.1 4321 0.2+0.1 -0.0 (0.5) 5.50.3 7.70.3 45 q q q q 12 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT* Tj Tstg (Ta=252C) Ratings 20 18 5 1 0.5 150 -55 to +150 Unit V V V A W C C 1 2 3 4 5 10 9 8 7 6 (0.8) 1.50.1 1.5+0.2 -0.1 Video cameras Cameras Portable CD players Small motor drive circuits in general for electronic equipment. 6 7 8 9 10 0.90.1 6.50.3 Internal Connection Note: marks used above: +: NPN part, -: PNP part * TC = 25C only when the elements are active Note.) The Part number in the Parenthesis shows conventional part number. 12 s Applications SO10-G1 Package 0.50.2 1 Small Signal Transistor Arrays UNA0206 s Electrical Characteristics Parameter Collector cutoff current (Ta=252C) Symbol ICBO ICER VCBO VCEO VEBO VF hFE1 hFE2 VCE(sat)1 VCE(sat)2 fT Cob Conditions (NPN) VCB = 20V, IE = 0 (PNP) VCB = -20V, IE = 0 (NPN) VCE = 18V, RBE = 100k (PNP) VCE = -18V, RBE = 100k (NPN) IC = 10A, IE = 0 (PNP) IC = -10A, IE = 0 (NPN) IC = 1mA, IB = 0 (PNP) IC = -1mA, IB = 0 (NPN) IE = 10A, IC = 0 (PNP) IE = -10A, IC = 0 IF = 1A (NPN) VCE = 2V, IC = 0.5A* (PNP) VCE = -2V, IC = - 0.5A* (NPN) VCE = 2V, IC = 1.5A* (PNP) VCE = -2V, IC = - 1.5A* (NPN) IC = 0.3A, IB = 10mA (PNP) IC = - 0.3A, IB = -10mA (NPN) IC = 0.7A, IB = 10mA (PNP) IC = - 0.7A, IB = -10mA (NPN) VCB = 6V, IE = 50mA, f = 200MHz (PNP) VCB = -6V, IE = -50mA, f = 200MHz (NPN) VCB = 6V, IE = 0, f = 1MHz (PNP) VCB = -6V, IE = 0, f = 1MHz 150 200 20 40 90 90 50 50 0.2 - 0.2 0.6 - 0.6 V 20 -20 18 -18 5 -5 1.5 360 360 min typ max 1 -1 10 -10 Unit A A Collector cutoff current Collector to base voltage V Collector to emitter voltage V Emitter to base voltage Forward voltage (DC) Forward current transfer ratio V V Forward current transfer ratio Collector to emitter saturation voltage Collector to emitter saturation voltage V Transition frequency MHz Collector output capacitance *Pulse measurement pF Characteristics charts of PNP transistor block PT -- Ta 0.6 IC -- VCE -3.0 Ta=25C -3.0 IC -- VBE VCE=-2V -2.5 Total power dissipation PT (W) 0.5 -2.5 Collector current IC (A) Collector current IC (A) 0.4 -2.0 IB= -14mA -12mA -10mA -8mA -2.0 Ta=75C -1.5 25C -25C 0.3 -1.5 0.2 -1.0 -6mA -4mA -1.0 0.1 -0.5 -2mA -0.5 0 0 20 40 60 80 100 120 140 160 0 0 -2 -4 -6 -8 -10 -12 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) 2 Small Signal Transistor Arrays VCE(sat) -- IC -10 UNA0206 hFE -- IC Cob -- VCB 120 Collector to emitter saturation voltage VCE(sat) (V) IC/IB=30 300 -3 -1 -0.3 -0.1 -0.03 -0.01 -0.003 -0.001 -0.01 -0.03 -0.1 -0.3 Ta=75C 25C -25C 250 Ta=75C 200 25C Collector output capacitance Cob (pF) VCE=-2V Forward current transfer ratio hFE 100 f=1MHz IE=0 Ta=25C 80 150 -25C 60 100 40 50 20 -1 -3 -10 0 -0.01 -0.03 -0.1 -0.3 -1 -3 -10 0 -1 -3 -10 -30 -100 Collector current IC (A) Collector current IC (A) Collector to base voltage VCB (V) Characteristics charts of NPN transistor block PT -- Ta 0.6 IC -- VCE 3.0 Ta=25C 3.0 IC -- VBE VCE=2V 2.5 IB=14mA Total power dissipation PT (W) 0.5 2.5 Collector current IC (A) Collector current IC (A) 0.4 2.0 12mA 1.5 10mA 8mA 1.0 6mA 4mA 2mA 2.0 Ta=75C 1.5 25C -25C 0.3 0.2 1.0 0.1 0.5 0.5 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0 0 0.4 0.8 1.2 1.6 2.0 2.4 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC 10 hFE -- IC IC/IB=30 300 60 Cob -- VCB Collector output capacitance Cob (pF) VCE=2V f=1MHz IE=0 Ta=25C Collector to emitter saturation voltage VCE(sat) (V) 3 1 0.3 0.1 0.03 0.01 0.003 0.001 0.01 0.03 Ta=75C 25C -25C Forward current transfer ratio hFE 250 Ta=75C 200 25C 150 -25C 50 40 30 100 20 50 10 0.1 0.3 1 3 10 0 0.01 0.03 0 0.1 0.3 1 3 10 1 3 10 30 100 Collector current IC (A) Collector current IC (A) Collector to base voltage VCB (V) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company. Please read the following notes before using the datasheets A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited. 2001 MAR |
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