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| Transistors with built-in Resistor UNRL110/111/113/114/115 Silicon PNP epitaxial planer type Unit: mm For digital circuit 0.0200.010 3 2 0.800.05 I Features * Mold leadless type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing. * The PCB mounting area is 1/10 of that of lead type package (3-pin MINI-type package). 4 1.000.05 1 0.600.05 4 0.200.03 1 I Resistance by Part Number * UNRL110 * UNRL111 * UNRL113 * UNRL114 * UNRL115 Marking Symbol P A B R M (R1) 47 k 10 k 47 k 10 k 10 k (R2) 10 k 47 k 47 k 3 0.300.03 0.60 2 0.050.03 1: Base 2: Emitter 3: Collector 4: Collector ML4-N1 Package I Absolute Maximum Ratings Ta = 25C Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation * Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg Rating -50 -50 -100 150 125 -55 to +125 Unit V V mA mW C C 4 R1 3 R2 1 2 Internal Connection Note) *: Printed circuit board copper foil for collector portion area: 20.0 mm2 or more, thickness: 1.6 mm I Electrical Characteristics Ta = 25C 3C Parameter Collector cutoff current Symbol ICBO ICEO Emitter cutoff current UNRL111 UNRL114 UNRL113 UNRL110/115 Collector to base voltage Collector to emitter voltage Forward current transfer ratio UNRL111 UNRL113/114 UNRL110/115 Collector to emitter saturation voltage VCE(sat) IC = -10 mA, IB = - 0.3 mA VCBO VCEO hFE IC = -10 A, IE = 0 IC = -2 mA, IB = 0 VCE = -10 V, IC = -5 mA -50 -50 35 80 160 460 - 0.25 V IEBO Conditions VCB = -50 V, IE = 0 VCE = -50 V, IB = 0 VEB = -6 V, IC = 0 Min Typ Max - 0.1 - 0.5 - 0.5 - 0.2 - 0.1 - 0.01 V V mA Unit A 0.50 0.050.03 Publication date: July 2001 SJH00044AED 1 UNRL110/111/113/114/115 I Electrical Characteristics(continued) Ta = 25C 3C Parameter High-level output voltage Low-level output voltage UNRL113 Transition frequency Input resistance UNRL111/114/115 UNRL110/113 Resistance ratio UNRL111/113 UNRL114 R1/R2 0.8 0.17 fT R1 Symbol VOH VOL Conditions VCC = -5 V, VB = - 0.5 V, RL = 1 k VCC = -5 V, VB = -2.5 V, RL = 1 k VCC = -5 V, VB = -3.5 V, RL = 1 k VCB = -10 V, IE = 1 mA, f = 200 MHz -30% 80 10 47 1.0 0.21 1.2 0.25 +30% MHz k Min -4.9 - 0.2 Typ Max Unit V V Common characteristics chart PT Ta 180 160 Total power dissipation PT (mW) 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 Ambient temperature Ta (C) Characteristics charts of UNRL110 IC VCE -120 VCE(sat) IC -100 hFE IC 400 VCE = -10 V Collector to emitter saturation voltage VCE(sat) (V) Collector current IC (mA) -10 -3 -1 Ta = 75C -0.3 -0.1 -25C 25C Forward current transfer ratio hFE Ta = 25C IB = -1.0 mA - 0.9 mA -100 - 0.8 mA - 0.7 mA - 0.6 mA - 0.5 mA -80 - 0.4 mA - 0.3 mA -60 - 0.2 mA - 0.1 mA -20 IC / IB = 10 -30 300 Ta = 75C 200 25C -25C -40 100 -0.03 0 0 -2 -4 -6 -8 -10 -12 -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 0 -1 -3 -10 -30 -100 -300 -1 000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 2 SJH00044AED UNRL110/111/113/114/115 Cob VCB 6 IO VIN -10 000 -3 000 VO = -5 V Ta = 25C VIN IO -100 -30 VO = - 0.2 V Ta = 25C Collector output capacitance Cob (pF) 5 f = 1 MHz IE = 0 Ta = 25C Output current IO (A) 4 Input voltage VIN (V) -1 000 -300 -100 -30 -10 -3 -10 -3 -1 -0.3 -0.1 3 2 1 -0.03 -0.6 -0.8 -1.0 -1.2 -1.4 0 -0.1 -0.3 -1 -3 -10 -30 -100 -1 -0.4 -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNRL111 IC VCE -160 -140 IB = -1.0 mA Ta = 25C -100 VCE(sat) IC Collector to emitter saturation voltage VCE(sat) (V) IC / IB = 10 160 VCE = -10 V -30 -10 -3 -1 -0.3 -0.1 -25C Ta = 75C hFE IC Ta = 75C - 0.9 mA Forward current transfer ratio hFE Collector current IC (mA) -120 -100 -80 -60 -40 -20 0 -2 -4 -6 -8 25C 120 -25C 80 - 0.8 mA - 0.7 mA - 0.6 mA - 0.5 mA - 0.4 mA - 0.3 mA - 0.2 mA - 0.1 mA 0 -10 -12 25C 40 -0.03 -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 0 -1 -3 -10 -30 -100 -300 -1 000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB 6 IO VIN -10 000 -3 000 VO = -5 V Ta = 25C -100 -30 VIN IO VO = - 0.2 V Ta = 25C Collector output capacitance Cob (pF) 5 f = 1 MHz IE = 0 Ta = 25C Output current IO (A) 4 -300 -100 -30 -10 -3 Input voltage VIN (V) -0.6 -0.8 -1.0 -1.2 -1.4 -1 000 -10 -3 -1 -0.3 -0.1 3 2 1 -0.03 -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 0 -0.1 -0.3 -1 -3 -10 -30 -100 -1 -0.4 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) SJH00044AED 3 UNRL110/111/113/114/115 Characteristics charts of UNRL113 IC VCE -160 IB = -1.0 mA -140 Ta = 25C - 0.9 mA - 0.8 mA - 0.7 mA - 0.6 mA - 0.5 mA - 0.4 mA - 0.3 mA - 0.2 mA - 0.1 mA -2 -4 -6 -8 -10 -12 -100 VCE(sat) IC Collector to emitter saturation voltage VCE(sat) (V) IC / IB = 10 hFE IC 400 VCE = -10 V Forward current transfer ratio hFE -30 -10 -3 -1 -0.3 -0.1 -25C Ta = 75C Collector current IC (mA) -120 -100 -80 -60 -40 -20 0 300 Ta = 75C 25C 200 -25C 25C 100 -0.03 0 -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 0 -1 -3 -10 -30 -100 -300 -1 000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB 6 IO VIN -10 000 -3 000 VO = -5 V Ta = 25C -100 -30 VIN IO VO = -0.2 V Ta = 25C Collector output capacitance Cob (pF) 5 f = 1 MHz IE = 0 Ta = 25C Output current IO (A) 4 -300 -100 -30 -10 -3 Input voltage VIN (V) -0.6 -0.8 -1.0 -1.2 -1.4 -1 000 -10 -3 -1 -0.3 -0.1 3 2 1 -0.03 -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 0 -0.1 -0.3 -1 -3 -10 -30 -100 -1 -0.4 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNRL114 IC VCE Ta = 25C -140 IB = -1.0 mA - 0.9 mA - 0.8 mA - 0.7 mA - 0.6 mA - 0.5 mA - 0.4 mA - 0.3 mA - 0.2 mA - 0.1 mA VCE(sat) IC -100 hFE IC 400 VCE = -10 V Collector to emitter saturation voltage VCE(sat) (V) -160 IC / IB = 10 Collector current IC (mA) -120 -100 -80 -60 -40 -20 0 -2 -4 -6 -10 -3 -1 -0.3 -0.1 25C Ta = 75C Forward current transfer ratio hFE -30 300 Ta = 75C 200 25C -25C 100 -0.03 0 -8 -10 -12 -25C -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 0 -1 -3 -10 -30 -100 -300 -1 000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 4 SJH00044AED UNRL110/111/113/114/115 Cob VCB 6 IO VIN -10 000 -3 000 VO = -5 V Ta = 25C -1 000 -300 VIN IO VO = -0.2 V Ta = 25C Collector output capacitance Cob (pF) 5 f = 1 MHz IE = 0 Ta = 25C Output current IO (A) 4 -300 -100 -30 -10 -3 Input voltage VIN (V) -0.6 -0.8 -1.0 -1.2 -1.4 -1 000 -100 -30 -10 -3 -1 -0.3 -0.1 -0.1 -0.3 -1 -3 -10 -30 -100 3 2 1 0 -0.1 -0.3 -1 -3 -10 -30 -100 -1 -0.4 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNRL115 IC VCE -160 -140 IB = -1.0 mA Ta = 25C - 0.9 mA - 0.8 mA - 0.7 mA - 0.6 mA - 0.5 mA - 0.4 mA - 0.3 mA - 0.2 mA -40 - 0.1 mA -20 0 -2 -4 -6 -8 -10 -12 -100 VCE(sat) IC Collector to emitter saturation voltage VCE(sat) (V) IC / IB = 10 400 hFE IC VCE = -10 V Collector current IC (mA) -120 -100 -80 -60 -10 -3 -1 -0.3 -0.1 25C Ta = 75C Forward current transfer ratio hFE -30 300 Ta = 75C 200 25C -25C 100 -0.03 -25C -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 0 -1 -3 -10 -30 -100 -300 -1 000 0 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB 6 IO VIN -10 000 -3 000 VO = -5 V Ta = 25C VIN IO -100 -30 VO = -0.2 V Ta = 25C Collector output capacitance Cob (pF) 5 f = 1 MHz IE = 0 Ta = 25C Output current IO (A) 4 Input voltage VIN (V) -1 000 -300 -100 -30 -10 -3 -10 -3 -1 -0.3 -0.1 3 2 1 -0.03 -0.6 -0.8 -1.0 -1.2 -1.4 0 -0.1 -0.3 -1 -3 -10 -30 -100 -1 -0.4 -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) SJH00044AED 5 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company. Please read the following notes before using the datasheets A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited. 2001 MAR |
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