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| UTC UT137E TRIACS DESCRIPTION Passivated , sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants. 1 TRIAC SYMBOL MT2 TO-220 G MT1 1:MT1 2:MT2 3:GATE ABSOLUTE MAXIMUM RATINGS PARAMETER Repetitive Peak Off-State Voltage UT137E-5 UT137E-6 UT137E-8 RMS On-state Current Full sine wave; Tmb102C VDRM 500* 600* 800 8 V SYMBOL RATINGS UNIT IT(RMS) A Non-Repetitive Peak. On-State Current Full sine wave; Tj=25C prior to surge ITSM A t=20ms 65 t=16.7ms 71 I2t For Fusing (t=10ms) I2t 21 A2s Repetitive Rate of Rise of On-state Current after Triggering ITM=12A;IG=0.2A,dIG/dt=0.2A/s T2+ G+ 50 dIT /dt A/s T2+ G50 T2- G50 T2- G+ 10 Peak Gate Voltage VGM 5 V Peak Gate Current IGM 2 A Peak Gate Power PGM 5 W Average Gate Power (Over any 20ms period) PG(AV) 0.5 W Operating Junction Temperature Tj 125 C Storage Temperature Tstg -40~150 C *Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 6A/s. UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R401-012,C UTC UT137E THERMAL RESISTANCES PARAMETER Thermal Resistance Junction to Mounting Base Full cycle Half cycle Thermal Resistance Junction to Ambient In free air TRIAC SYMBOL Rth j-mb Rth j-a 60 MIN TYP MAX 2.0 2.4 UNIT K/W K/W STATIC CHARACTERISTICS (Tj=25C,unless otherwise specified) PARAMETER Gate Trigger Current IGT SYMBOL TEST CONDITIONS VD=12V, IT=0.1A T2+ G+ T2+ GT2- GT2- G+ VD=12V, IGT=0.1A T2+ G+ T2+ GT2- GT2- G+ VD=12V, IGT=0.1A IT=10A VD=12V, IT=0.1A VD=400V, IT=0.1A, Tj=125C VD=VDRM(max) , Tj=125C MIN TYP 2.5 4.0 5.0 11 3.0 14 3.0 4.0 2.5 1.3 0.7 0.4 0.1 MAX 10 10 10 25 25 35 25 35 20 1.65 1.5 0.5 UNIT mA Latching Current IL mA Holding Current On-State Voltage Gate Trigger Voltage Off-state Leakage Current IH VT VGT ID 0.25 mA V V V mA DYNAMIC CHARACTERISTICS(Tj=25C,unless otherwise specified) PARAMETER Critical Rate of Rise of off-state Voltage Gate Controlled Turn-on Time SYMBOL dVD/dt tgt TEST CONDITIONS VDM=67% VDRM(max), Tj=125C Exponential waveform,Gate open circuit ITM=12A,VD=VDRM(max),IG=0.1A dIG/dt=5A/s MIN TYP 50 2 MAX UNIT V/s s UTC UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R401-012,C UTC UT137E TYPICAL CHARACTERISTICS Figure 1.Maximum on -state Dissipation.Ptot vs RMS Onstate Current,IT(RMS),Where=conduction Angle. 12 Ptot/W 10 8 6 4 2 0 0 2 6 4 IT(RMS)/A 8 Tsp(max)/C =180 =120 =90 =60 =30 101 105 109 6 113 4 117 121 125 10 2 0 -50 0 50 Tmb/ 100 10 8 TRIAC Figure 4.Maximum Permissible RMS Current IT(RMS) vs mounting baseTemperature Tmb IT(RMS)/A 102 150 1000 Figure 2. Maximum Permissible Non-repetitive Peak On-state Current ITSM,vs Pulse Width tp,for Sinusoidal Currents,tp20ms ITSM/A IT T ITSM time 25 20 15 10 5 Figure 5.Maximum Permissible Repetitive RMS on-state Current IT(RMS),vs Surge Duration,for Sinusoidal Currents,f=50Hz;Tmb102 IT(RMS)/A Tj initial=25max 100 dIT/dt limit T2-G+ quadrant 10 10us 100us 1ms T/s Figure 3 .Maximum Permissible Non-Repetitive peak on-state Current ITSM,vs Number of Cycles, for Sinusoidal Currents,f=50Hz ITSM/A IT T Tj initial=25max 10ms 100ms 0 0.01 0.1 1 Surge Duration /S 10 80 70 60 50 40 30 20 10 0 1 ITSM time Figure 6.Normalised Gate Trigger Voltage VGT(Tj)/ VGT(25),vs Junction Temperature Tj VGT(Tj) 1.6 VGT(25) 1.4 1.2 1 0.8 0.6 0.4 -50 0 50 Tj/ 100 150 10 100 Number of Cycles at 50Hz 1000 UTC UNISONIC TECHNOLOGIES CO., LTD. 3 QW-R401-012,C UTC UT137E Figure 7.Normalised Gate Trigger Current IGT(Tj)/IGT(25),vs Junction Temperature Tj IGT(Tj) IGT(25) 3 2.5 2 1.5 10 1 0.5 0 -50 0 50 Tj/ 100 150 5 0 T2+G+ T2+GT2-GT2-G+ TRIAC Figure 10.Typical and Maximum On-state Characteristic IT/A 25 20 15 Tj=125 Tj=125 typ Vo=1.264V Rs=0.0378Ohms max 0 3 2.5 2 1.5 1 0.5 0 -50 Figure 8.Normalised Latching Current IL(Tj)/IL(25),vs Junction Temperature Tj IL(Tj) IL(25) 2.5 1.5 2 VT/V Figure 11.Transient Thermal Impedance Zth j-mb,vs Pulse Width tp 0.5 1 Zth j-mb(K/W) 3 10 unidirectional 1 bidirectional 0.01 PD tp t 0 50 Tj/ 100 150 0.001 10us 0.1ms 1ms 10ms tp/s 0.1s 1s 10s Figure 9.Normalised Holding Current IH(Tj)/IH(25),vs Junction Temperature Tj IH(Tj) IH(25) Figure 12.Typical ,critical rate of rise of off-state voltage,dVD/dt versus junction temperature Tj 1000 dVD/dt(V/us) 3 2.5 2 1.5 1 0.5 0 -50 100 10 0 50 Tj/ 100 150 1 0 50 Tj/ 100 150 UTC UNISONIC TECHNOLOGIES CO., LTD. 4 QW-R401-012,C UTC UT137E TRIAC UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO., LTD. 5 QW-R401-012,C |
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