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| C-10 01/99 VCR11N N-Channel Silicon Voltage Controlled Resistor JFET Small Signal Attenuators Filters Amplifier Gain Control Oscillator Amplitude Control Absolute maximum ratings at TA = 25C. Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating - 15 V 10 mA 300 mW 2.4 mW/C At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Static Drain Source ON Resistance Ratio VCR11N Min V(BR)GSS IGSS VGS(OFF) rDS(MIN) rDS(MAX) -8 .95 .95 - 25 - 0.2 - 12 1 1 Max Unit V nA V Process NJ26 Test Conditions IG = - 1 A, VDS = OV VGS = - 15V, VDS = OV ID = 1 A, VDS = - 10V VDS = 100 mV, rDS1 = 200 VGS1 = VGS2, rDS1 = 2 k pF pF Dynamic Electrical Characteristics Drain Source ON Resistance Drain Gate Capacitance Source Gate Capacitance rds(on) Cdg Csg 70 200 7.5 7.5 VGS = OV, ID = OA VDG = 10V, IS = OA VGS = 10V, ID = OA f = 1 kHz f = 1 MHz f = 1 MHz TO71 Package Dimensions in Inches (mm) Pin Configuration 1 Source , 2 Drain 1, 3 Gate 1, 5 Source 2, 6 Drain 2, 7 Gate 2 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com |
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