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| Ordering number : ENN8021 VEC2602 N-Channel Silicon MOSFET VEC2602 Features * * General-Purpose Switching Device Applications * * Best suited for inverter applications. The VEC2602 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance, thereby enabling high-density mounting. 4V drive. Mounting height 0.75mm. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (900mm2!0.8mm)1unit Mounted on a ceramic board (900mm2!0.8mm) Conditions N-channel 30 20 4 16 0.9 1.0 150 --55 to +150 P-channel -30 20 --3 -12 Unit V V A A W W C C Electrical Characteristics at Ta=25C Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=2A ID=2A, VGS=10V ID=1A, VGS=4V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz 30 1 10 1.0 2.2 3.6 37 70 370 85 47 48 99 2.4 V A A V S m m pF pF pF Symbol Conditions Ratings min typ max Unit Marking : BE Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N1004PE TS IM TB-00000135 No.8021-1/6 VEC2602 Continued from preceding page. Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=--1mA, VGS=0 VDS=--30V, VGS=0 VGS=16V, VDS=0 VDS=--10V, ID=-1mA VDS=--10V, ID=-1.5A ID=--1.5A, VGS=-10V ID=--0.7A, VGS=-4V VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--10V, VGS=-10V, ID=--3A VDS=--10V, VGS=-10V, ID=--3A VDS=--10V, VGS=-10V, ID=--3A IS=--3A, VGS=0 --1.0 2.0 3.4 65 117 510 115 78 11 17 53 35 11 2.4 1.7 --0.87 --1.2 86 168 --30 --1 10 --2.4 V A A V S m m pF pF pF ns ns ns ns nC nC nC V Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=10V, ID=4A VDS=10V, VGS=10V, ID=4A VDS=10V, VGS=10V, ID=4A IS=4A, VGS=0 Ratings min typ 11 28 37 34 8.5 1.8 1.3 0.83 1.2 max Unit ns ns ns ns nC nC nC V Package Dimensions unit : mm 2227A 0.25 0.3 8 7 65 0.15 Electrical Connection 8 7 6 5 0.25 1 2 2.9 3 0.65 4 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 1 2 3 4 2.8 2.3 Top view 0.75 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : VEC8 0.07 No.8021-2/6 VEC2602 Switching Time Test Circuit [N-channel] VIN 10V 0V VIN ID=2A RL=7.5 VOUT VDD=15V [P-channel] VIN 0V --10V VIN ID= --1.5A RL=10 VOUT VDD= --15V D PW=10s D.C.1% D PW=10s D.C.1% G VEC2602 P.G 50 G S P.G 50 VEC2602 S 6.0 ID -- VDS 6V [Nch] --4.0 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 ID -- VDS --5 .0 0V --4. V 0V [Pch] 5V 4V 8V 5.0 Drain Current, ID -- A Drain Current, ID -- A --8 .0V --10 V 4.0 10V --6 . 3.0 VGS= --2.5V 2.0 1.0 VGS=3V 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 Drain-to-Source Voltage, VDS -- V 5.0 IT07734 Drain-to-Source Voltage, VDS -- V --5.0 IT07735 ID -- VGS [Nch] ID -- VGS [Pch] VDS=10V 4.0 --4.0 VDS= --10V Drain Current, ID -- A Drain Current, ID -- A 3.0 --3.0 2.0 --2.0 5C 0 0 --0.5 --1.0 --1.5 Ta=7 5C --25 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 25 25 1.0 --1.0 C C Ta= 7 --2.0 --25 C --2.5 C --3.0 IT07737 Gate-to-Source Voltage, VGS -- V 140 IT07736 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V --220 [Nch] Ta=25C Static Drain-to-Source On-State Resistance, RDS(on) -- m RDS(on) -- VGS [Pch] Ta=25C Static Drain-to-Source On-State Resistance, RDS(on) -- m --200 --180 --160 --140 --120 --100 --80 --60 --40 --20 120 100 ID=2A ID=1A ID= --1.5A ID= --0.7A 80 60 40 20 0 0 2 4 6 8 10 12 IT07738 0 0 --2 --4 --6 --8 --10 --12 IT07739 Gate-to-Source Voltage, VGS -- V Gate-to-Source Voltage, VGS -- V No.8021-3/6 VEC2602 140 RDS(on) -- Ta [Nch] Static Drain-to-Source On-State Resistance, RDS(on) -- m 200 180 160 140 120 100 80 60 40 20 0 --50 --25 0 RDS(on) -- Ta [Pch] Static Drain-to-Source On-State Resistance, RDS(on) -- m 120 100 80 , VG I D=1A V S=4 A, VG --0.7 I D= --4 S= .0V 60 40 =10V I D=2A, V GS --10V , V GS= = --1.5A ID 20 0 --50 --25 0 25 50 75 100 125 150 25 50 75 100 125 150 Ambient Temperature, Ta -- C 10 IT07740 yfs -- ID Ambient Temperature, Ta -- C 10 IT07741 [Nch] Forward Transfer Admittance, yfs -- S 7 5 yfs -- ID [Pch] VDS= --10V Forward Transfer Admittance, yfs -- S VDS=10V 7 5 3 2 Ta -25 =- C 75 C 3 2 Ta= --25 C C 75 1.0 7 5 3 0.1 C 25 1.0 7 5 3 --0.1 25 C 2 3 5 7 1.0 2 3 5 Drain Current, ID -- A 10 7 5 3 2 10 IT07742 7 2 3 5 7 --1.0 2 3 5 IF -- VSD Drain Current, ID -- A --10 7 5 3 2 7 --10 IT07743 [Nch] VGS=0 IF -- VSD [Pch] VGS=0 Forward Current, IF -- A 5C 25 C --25 C 0.1 7 5 3 2 0.01 7 5 3 2 0.3 0.4 0.5 Ta= 7 --0.1 7 5 3 2 --0.01 7 5 3 2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1 --1.2 0.001 0.2 0.6 0.7 0.8 0.9 1.0 1.1 --0.001 --0.2 1000 7 5 Ciss, Coss, Crss -- VDS Diode Forward Voltage, VSD -- V IT07744 [Nch] f=1MHz 1000 7 Ciss, Coss, Crss -- VDS Ciss Diode Forward Voltage, VSD -- V Ta= 7 5C 25 C --25 C 1.0 7 5 3 2 Forward Current, IF -- A --1.0 7 5 3 2 IT07745 [Pch] f=1MHz Ciss 5 Ciss, Coss, Crss -- pF Ciss, Coss, Crss -- pF 3 2 3 2 100 7 5 3 2 10 0 5 10 Coss Crss Coss 100 7 5 3 Crss 15 20 25 30 IT07746 0 --5 --10 --15 --20 --25 --30 IT07747 Drain-to-Source Voltage, VDS -- V Drain-to-Source Voltage, VDS -- V No.8021-4/6 VEC2602 10 9 VGS -- Qg VDS=10V ID=4A [Nch] --10 --9 VGS -- Qg VDS= --10V ID= --3A [Pch] Gate-to-Source Voltage, VGS -- V Gate-to-Source Voltage, VGS -- V 4 6 8 10 IT07748 8 7 6 5 4 3 2 1 0 0 2 --8 --7 --6 --5 --4 --3 --2 --1 0 0 2 4 6 8 10 12 IT07749 Total Gate Charge, Qg -- nC 2 100 Total Gate Charge, Qg -- nC 2 100 SW Time -- ID VDD=15V VGS=10V [Nch] VDD= --15V VGS= --10V SW Time -- ID td(off) tf [Pch] Switching Time, SW Time -- ns 7 5 3 2 10 7 5 3 2 1.0 0.1 2 3 5 7 1.0 2 3 5 7 10 Switching Time, SW Time -- ns 7 5 3 2 td(off) tf td(on) td(on) 10 7 5 3 2 1.0 --0.1 tr tr 2 3 5 7 --1.0 2 3 5 Drain Current, ID -- A 3 2 10 7 5 IT07750 Drain Current, ID -- A 3 2 --10 7 5 7 --10 IT07751 ASO [Nch] <10s 1m 10 m s ASO [Pch] <10s 1m s IDP=16A ID=4A IDP= --12A ID= --3A s Drain Current, ID -- A Drain Current, ID -- A 3 2 1.0 7 5 3 2 0.1 7 5 3 2 10 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 10 m DC 0m op s DC 10 s 0m er ati op s on er ati on Operation in this area is limited by RDS(on). Ta=25C Single pulse Mounted on a ceramic board (900mm2!0.8mm) 1unit 23 5 7 0.1 23 5 7 1.0 23 5 7 10 23 5 Operation in this area is limited by RDS(on). Ta=25C Single pulse Mounted on a ceramic board (900mm2!0.8mm) 1unit 5 7 --0.1 23 5 7--1.0 23 5 7 --10 23 5 0.01 0.01 --0.01 --0.01 2 3 1.2 Drain-to-Source Voltage, VDS -- V IT07752 PD -- Ta [Nch / Pch] Mounted on a ceramic board (900mm2!0.8mm) Drain-to-Source Voltage, VDS -- V IT07753 Allowable Power Dissipation, PD -- W 1.0 0.9 0.8 To t 0.6 al Di 1u 0.4 ss ip ni t ati on 0.2 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C IT07754 No.8021-5/6 VEC2602 Note on usage : Since the VEC2602 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2004. Specifications and information herein are subject to change without notice. PS No.8021-6/6 |
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