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| HiPerFETTM Power Module High dv/dt, Low trr, HDMOSTM Family VMO 60-05F VDSS = 500 V ID25 = 60 A RDS(on) = 65 mW 1 TO-240 AA 1 3 6 5 Preliminary Data 5 6 3 1 = Drain 5 = Gate 3 = Source 6 = Kelvin Source Symbol VDSS VDGR VGS VGSM ID25 ID100 IDM Ptot TJ TJM Tstg VISOL Md Weight Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 10 kW Continuous Transient TC = 25C TC = 100C TC = 25C, tp = 10 s, pulse width limited by TJM TC = 25C Maximum Ratings 500 500 20 30 60 37 240 590 -40 ... +150 150 -40 ... +125 V V V V A A A W C C C V~ V~ Features * International standard package * Direct copper bonded Al2O3 ceramic base plate * Isolation voltage 3600 V~ * Low RDS(on) HDMOSTM process Applications * Switched-mode and resonant-mode power supplies * Uninterruptible power supplies (UPS) * DC servo and robot drives * DC choppers 50/60 Hz, t = 1 min IISOL 1 mA, t = 1 s Mounting torque(M5 or 10-32 UNF) Terminal connection torque (M5) Typical including screws 3000 3600 2.5-4.0/22-35 Nm/lb.in. 2.5-4.0/22-35 Nm/lb.in. 90 g Advantages * Easy to mount with two screws * Space and weight savings * High power density * Low losses Symbol Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 500 2 4 V V VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V VDS = VGS, ID = 24 mA VGS = 20 V DC, VDS = 0 VDS = VDSS, VGS = 0 V, TJ = 25C VDS = 0.8 * VDSS, VGS = 0 V, TJ = 125C VGS = 10 V, ID = 0.5 * ID25 Pulse test, t 300 s, duty cycle d 2 % 500 nA 600 A 3 mA 65 75 mW Data per MOSFET unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. (c) 2000 IXYS All rights reserved 1-2 943 VMO60-05F Symbol Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 30 60 12.6 1.35 0.405 50 45 250 30 405 90 180 0.2 12.7 9.6 S nF nF nF ns ns ns ns nC nC nC 0.21 K/W K/W mm mm 50 m/s2 Dimensions in mm (1 mm = 0.0394") gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd RthJC RthCH dS dA a VDS = 10 V; ID = 0.5 * ID25 pulsed VGS = 0 V, VDS = 25 V, f = 1 MHz VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 W (External), resistive load VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 heatsink compound applied Creepage distance on surface Strike distance through air Allowable acceleration Source-Drain Diode Symbol IS ISM VSD trr Conditions VGS = 0 V Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 60 240 1.5 250 A A V ns Repetitive; pulse width limited by TJM IF = IS; VGS = 0 V, Pulse test, t 300 s, duty cycle d 2% IF = IS, -di/dt = 100 A/s, VDS = 100 V, VGS = 0 V (c) 2000 IXYS All rights reserved 2-2 |
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