View VTO175_1335211.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

VTO 110 VTO 175
Three Phase Full Controlled Rectifier Bridge, B6C
IdAVM = 110/167 A VRRM = 1200-1600 V
VRSM VDSM V 1300 1500 1700
VRRM VDRM V 1200 1400 1600
Type
E D C
A 2 3 1
C ~
D ~
E ~ 45
6
VTO 110-12io7 VTO 175-12io7 VTO 110-14io7 VTO 175-14io7 VTO 175-16io7
5
4
6 B
32
Symbol IdAV IFRMS, ITRMS IFSM, ITSM Test Conditions TC = 85C; module per leg TVJ = 45C; VR = 0 TVJ = TVJM VR = 0 I2t TVJ = 45C VR = 0 TVJ = TVJM VR = 0 (di/dt)cr t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings VTO 110 VTO 175 110 58 1150 1230 1000 1070 6600 6280 5000 4750 150 167 89 1500 1600 1350 1450 11200 10750 9100 8830 A A A A A A A2s A2s A2s A2s A/ms Features
q q q q
1
A +
B -
Package with screw terminals Isolation voltage 3000 V~ Planar passivated chips UL registered E72873
TVJ = TVJM repetitive, IT = 50 A f =400 Hz, tP =200 ms VD = 2/3 VDRM IG = 0.3 A, non repetitive diG/dt = 0.3 A/ms, IT = 1/3 * IdAV TVJ = TVJM; VDR = 2/3 VDRM RGK = ; method 1 (linear voltage rise) tp = 30 ms tp = 500 ms tp = 10 ms
Applications
q q
500 1000 10
A/ms V/ms V W W W W C C C V~ V~ Nm lb.in. g
q
Input rectifier for PWM converter Input rectifier for switch mode power supplies (SMPS) Softstart capacitor charging
(dv/dt)cr VRGM PGM PGAVM TVJ TVJM Tstg VISOL Md Weight
Advantages
q q q
TVJ = TVJM IT = ITAVM
10 5 1 0.5
Easy to mount with two screws Space and weight savings Improved temperature and power cycling
-40...+125 125 -40...+125 50/60 Hz, RMS t = 1 min t=1s IISOL 1 mA Mounting torque (M6) Terminal connection torque (M6) typ. 2500 3000 5-15 5-15 300
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions.
(c) 2000 IXYS All rights reserved
1-2
VTO 110 VTO 175
Symbol IR, ID VF, VT VT0 rT VGT IGT VGD IGD IL IH tgd RthJC RthJH dS dA a Test Conditions VR = VRRM; VD = VDRM IF, IT = 200 A, TVJ = 25C For power-loss calculations only (TVJ = 125C) VD = 6 V; VD = 6 V; TVJ = TVJM; TVJ = TVJM; TVJ = 25C TVJ = -40C TVJ = 25C TVJ = -40C VD = 2/3 VDRM VD = 2/3 VDRM TVJ = 25C 0.65 0.108 0.8 0.133 10 9.4 50 TVJ = TVJM TVJ = 25C 1.75 0.85 6 1.5 1.6 100 200 0.2 5 450 200 2 0.46 0.077 0.55 0.092 Characteristic Values VTO 110 VTO 175 5 0.3 1.57 0.85 3.5 mA mA V V mW V V mA mA V mA mA mA ms K/W K/W K/W K/W mm mm m/s2
IGD, TVJ = 125C 2 3 5 1 4 6
10 V VG
1: IGT, TVJ = 125C 2: IGT, TVJ = 25C 3: IGT, TVJ = -40C
1
4: PGAV = 0.5 W 5: PGM = 5 W 6: PGM = 10 W
0.1 1 10 100 1000 IG mA
IG = 0.3 A; tG = 30 ms diG/dt = 0.3 A/ms
TVJ = 25C; VD = 6 V; RGK = TVJ = 25C; VD = 1/2 VDRM IG = 0.3 A; diG/dt = 0.3 A/ms per thyristor (diode); DC current per module per thyristor (diode); DC current per module Creeping distance on surface Creepage distance in air Max. allowable acceleration
Fig. 1 Gate trigger characteristics
120 A IdAV 100
VTO 110
80
60
40
20
0 0 50 100 TC C 150
Dimensions in mm (1 mm = 0.0394")
900 A 800
7
Fig. 2
0.7
VTO 110
DC output current at case temperature
VTO 110
M6x10
IFSM
30
50 Hz 80% VRRM
K/W 0.6 ZthJC 0.5 0.4
700 TVJ = 45C 600 500
94 80 72 26 26
3
0.3 400 TVJ = 125C 300
6.5
0.2 0.1 0.0 10-3
15
54 27 6.5
C~ A+
3 2 1
D~ B-
E~
200 100 10-3
4 5 6 7
655
10-2
10-1
12 2.8 x 0.8 M6
100 t
s
101
10-2
10-1
100 t
s
101
25 66
Fig. 3 Surge overload current IFSM: Crest value, t: duration
Fig. 4 Transient thermal impedance junction to case (per leg)
(c) 2000 IXYS All rights reserved
2-2

▲Up To Search▲

Price & Availability of VTO175

	To Download VTO175 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .