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| VWM 350-0075P Three phase full bridge with Trench MOSFETs Preliminary data L+ VDSS = 75 V RDSon = 2.3 m ID25 = 340 A T1 G1 S1 G3 S3 T2 G5 S5 T3 T4 G2 G4 S4 T5 G6 S6 T6 L1 L2 L3 S2 L- MOSFETs T1 - T6 Symbol VDSS VGS ID25 ID80 ID25 ID80 TC = 25C TC = 80C TC = 25C (diode) TC = 80C (diode) Conditions TVJ = 25C to 150C Maximum Ratings 75 20 340 250 340 250 V V A A A A Applications AC drives * in automobiles - electric power steering - starter generator - etc... * in industrial vehicles - propulsion drives - fork lift drives * in battery supplied equipment Features * MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode * package: - high level of integration - solder terminals for PCB mounting - isolated DCB ceramic base plate with optimized heat transfer Symbol Conditions Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 2.3 2 0.25 0.2 450 60 170 60 170 320 200 1.1 90 0.51 1.6 3.3 m 4 0.02 V mA mA A nC nC nC ns ns ns ns V ns 0.26 K/W K/W RDSon VGSth IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf VF t rr RthJC RthJH VGS = 10 V; ID = ID80 VDS = 20 V; ID = 2 mA VDS = 75V; VGS = 0 V; TVJ = 25C TVJ = 125C VGS = 20 V; VDS = 0 V VGS= 10 V; VDS = 0.5 * VDSS; ID = 175A VGS= 10 V; VDS = 0.5 * VDSS; ID = 175 A; RG = 2.2 (diode) IF = 175 A; VGS= 0 V (diode) IF = 40 A; -di/dt = 200 A/s; VDS= 30 V with heat transfer paste IXYS reserves the right to change limits, test conditions and dimensions. (c) 2003 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 1-2 IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670 340 Ratings and characteristic values are per individual MOSFET VWM 350-0075P Module Symbol TVJ Tstg VISOL Md Symbol IISOL 1 mA; 50/60 Hz; t = 1 min Mounting torque (M5) Conditions Conditions Maximum Ratings -40...+175 -40...+125 500 2 - 2.5 C C V~ Nm Equivalent Circuits for Simulation Thermal Response Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 80 g junction - case (typ.) Cth1 = 0.13 J/K; Rth1 = 0.08 K/W Cth2 = 0.22 J/K; Rth2 = 0.18 K/W Weight typ. Dimensions in mm (1 mm = 0.0394") IXYS reserves the right to change limits, test conditions and dimensions. (c) 2003 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 2-2 IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670 340 |
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