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| W4501DW Epitaxial Planer Transistor Silicon NPN P b Lead(Pb)-Free 1 4 5 6 3 2 1 65 4 2 3 Features: * Both 2SC2412K Chip x 2 in a SOT-363 NPN+NPN SOT-363(SC-88) Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value 50 60 7 150 Unit Vdc Vdc Vdc mAdc Thermal Characteristics Characteristics (1) Symbol PD R JA TJ,Tstg Max 380 328 -55 to +150 Unit mW C/W C Total Device Dissipation TA=25C Thermal Resistance, Junction to Ambient Junction and Storage, Temperature Device Marking W4501DW=5H Electrical Characteristics Off Characteristics (TA=25 C Unless Otherwise noted) Symbol Min Max Unit Characteristics Collector-Emitter Breakdown Voltage(2) (IC=1.0mAdc,IB=0) Collector-Base Breakdown Voltage (IC=50 uAdc, IE=0) Emitter-Base Breakdown Voltage (IE=50 uAdc, IC=0) Emitter Cutoff Current (VEB =7.0Vdc) Collector Cutoff Current (VCB=60Vdc) 1. Device Mounted FR4 glass epoxy printed circuit board using the minimun recommended footprint. 2. Pulse Test:Pulse Width<300uS, Duty Cycle<2.0% = = V(BR)CEO V(BR)CBO V(BR)EBO IEBO ICBO 50 60 7.0 0.1 0.1 Vdc Vdc Vdc Adc Adc - http://www.weitron.com.tw WEITRON 1/4 30-Nov-05 W4501DW Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Typ Max Unit On Characteristics DC Current Gain (VCE= 6.0Vdc, IC= 1.0mAdc) Collector-Emitter Saturation Voltage (IC= 50mAdc, IB= 5.0mAdc) hFE VCE(sat) 120 560 0.4 Vdc Small-signal Characteristics Current-Gain-Bandwidth Product (VCE= 12 Vdc, IE= -2.0 mAdc, f=100MHz) Output Capacitance (VCE= 12 Vdc, f=1.0MHz) fT Cobo 180 2.0 3.5 MHz PF Electrical Characteristics Curve COLLECTOR CURRENT : I C (mA) COLLECTOR CURRENT : IC (mA) 50 20 10 5 V CE =6V 100 Ta=25C 80 0.50mA A 0.45m A 0.40m 0.35mA 0.30mA 0.25mA 0.20mA 2 1 0.5 0.2 0.1 0 0.2 Ta =100 C 25 C 55 C 60 40 0.15mA 0.10mA 20 0 0.05mA IB=0A 0 0.4 0.8 1.2 1.6 2.0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 BASE TO EMITTER VOLTAGE : VBE (V) Grounded emitter propagation characteristics 10 Ta=25C 30 A 27 A 8 24 A 21 A 6 18 A 15 A 4 12 A 9A 2 6A 3A 0 0 4 8 IB=0A 12 16 20 COLLECTOR TO EMITTER VOLTAGE : V CE (V) Fig.1 COLLECTOR CURRENT : IC (mA) Fig.2 Grounded emitter outputcharacteristics COLLECTOR TO EMITTER VOLTAGE : V CE (V) Fig.3 Grounded emitter output characteristics http://www.weitron.com.tw WEITRON 2/4 30-Nov-05 W4501DW DC CURRENT GAIN : h FE 500 DC CURRENT GAIN : hFE Ta=25 C 500 Ta=100 C 200 100 50 25 C 55 C V CE =5V 200 100 50 V CE =5V 3V 1V 20 10 0.2 20 10 0.2 0.5 1 2 5 10 20 50 100 200 COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs collector current COLLECTOR SATURATION VOLTAGE : V CE(sat) (V) 0.5 0.5 1 2 5 10 20 50 100 200 COLLECTOR CURRENT : I C (mA) Fig.5 DC current gain vs collector current COLLECTOR SATURATION VOLTAGE : V CE(sat) (V) 0.5 IC/IB=10 Ta=25 C 0.2 IC/IB=50 20 10 0.2 Ta=100 C 25 C 55 C 0.1 0.05 0.1 0.05 0.02 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 200 0.01 0.2 0.5 1 2 5 10 20 50 100 200 COLLECTOR CURRENT : IC(mA) Fig. 6 Collector-emitter saturation voltage vs. collector current COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage vs. collector current COLLECTOR OUTPUT CAPACITANCE : Cob ( pF) EMITTER INPUT CAPACITANCE : Cib ( pF) TRANSITION FREQUENCY : f T (MHz) 20 500 Ta=25 C V CE =6V 10 Cib Ta=25 C f=1MHz IE =0A IC=0A 5 200 2 100 Cob 1 0.2 0.5 1 2 5 10 20 50 50 0.5 1 2 5 10 20 50 100 EMITTER CURRENT : IE (mA) Fig.8 Gain bandwidth product vs emitter current COLLECTOR TO BASE VOLTAGE : V CB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.9 Collector output capacitance vs collector-base voltage Emitter input capacitance vs emitter-base voltage http://www.weitron.com.tw WEITRON 3/4 30-Nov-05 W4501DW SOT-363 Package Outline Dimensions A Unit:mm SOT-363 4 6 5 BC 1 2 3 D E H K J L M Dim A B C D E H J K L M Min Max 0.10 0.30 1.15 1.35 2.00 2.20 0.65 REF 0.30 0.40 1.80 2.20 0.10 0.80 1.10 0.25 0.40 0.10 0.25 WEITRON http://www.weitron.com.tw 4/4 30-Nov-05 |
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