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| WT6401 P-Channel Enhancement Mode Power MOSFET 1 GATE SOURCE 3 DRAIN DRAIN CURRENT -4.3 AMPERS DRAIN SOUCE VOLTAGE -12 VOLTAGE 2 Features: *Super High Dense Cell Design For Low RDS(ON) RDS(ON)<50m@VGS=10V *Rugged and Reliable *Simple Drive Requirement *Fast Switching *1.8V Gate Rated *SOT-23 Package 3 1 2 SOT-23 Applications *Power Management in Notebook Computer *Portable Equipment *Battery Powered System Maximum Ratings(T =25C Unless Otherwise Specified) A Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 ,VGS@10V(TA ,VGS@10V(TA Pulsed Drain Current1 Total Power Dissipation(TA=25 ) Maximum Junction-ambient3 Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD R JA Value Unit V 3 A 1.38 90 -55~+150 W /W TJ, Tstg Device Marking WT6401=6401 http:www.weitron.com.tw WEITRON 1/6 06-May-05 WT6401 Electrical Characteristics (TA = 25 Characteristic Unless otherwise noted) Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS=0,ID=-250A Gate-Source Threshold Voltage VDS=VGS,ID=-250A Gate-Source Leakage Current VGS= 8V Drain-Source Leakage Current(Tj=25) VDS=-16V,VGS =0 Drain-Source Leakage Current(Tj=70) VDS=-12V,VGS =0 Drain-Source On-Resistance2 VGS=-4.5V,ID=-4.3A VGS=-2.5V,ID=-2.5A VGS=-1.8V,ID=-2.0A Forward Transconductance VDS=-5.0,ID=-4.0A RDS(on) 12 50 85 125 m IDSS -25 BV DSS VGS(Th) IGSS -12 V -1.0 nA 100 -1 A gfs S Dynamic Input Capacitance VGS=0V,VDS=-15V,f=1.0MHz Output Capacitance VGS=0V,VDS=-15V,f=1.0MHz Reverse Transfer Capacitance VGS=0V,VDS=-15V,f=1.0MHz Ciss Coss Crss 985 180 160 1580 pF http:www.weitron.com.tw WEITRON 2/6 06-May-05 WT6401 Switching Turn-on Delay Time2 VDS=-10V,VGS=-10V,ID=-1A,RD=10,RG=3.3 Rise Time VDS=-10V,VGS=-10V,ID=-1A,RD=10,RG=3.3 Turn-off Delay Time VDS=-10V,VGS=-10V,ID=-1A,RD=10,RG=3.3 Fall Time VDS=-10V,VGS=-10V,ID=-1A,RD=10,RG=3.3 Total Gate Charge2 VDS=-12V,VGS=-4.5V,ID=-4.0A Gate-Source Charge VDS=-12V,VGS=-4.5V,ID=-4.0A Gate-Source Change VDS=-12V,VGS=-4.5V,ID=-4.0A td(on) 6 5 16 3 15 1.3 4 ns td (off) 24 nC tr tf Qg Qgs Qgd Source-Drain Diode Characteristics Forward On Voltage2 VGS=0V,IS=-1.2A VSD - 25 26 1.2 - V ns nC Reverse Recovery Time2 VGS=0V,IS=-4.0A,dl/dt=100A/s Reverse Recovery Charge VGS=0V,IS=-4.0A,dl/dt=100A/s Trr Qrr Note: 1. Pulse width limited by max, junction temperature. 2. pulse width300s, duty cycle2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 270/W when mounted on min, copper pad. http:www.weitron.com.tw WEITRON 3/6 06-May-05 WT6401 16 14 14 TA=25C -5.0V -4.5V TA=150C -5.0V -4.5V -3.0V -2.5V 12 -I D ,DRAIN CURRENT (A) ID ,Drain Current (A) 12 10 8 6 4 2 0 0 1 2 3 4 5 -3.0V -2.5V 10 8 6 4 2 0 0 2 4 6 VG=-1.8V VG=-1.8V 6 8 FIG.1 Typical Output Characteristics 70 1.6 -VDS ,DRAIN-TO-SOURCE VOLTAGE(V) Fig.2 Typical Output Characteristics VDS ,Drain-to-source Voltage(V) ID = -3A TA = 25C Normalized RDs(on) 60 1.4 ID = -4A VG = -4.5V 1.2 1.0 0.8 RDs(on) (m) 50 40 1 Fig.3 On-Resistance v.s. Gate Voltage 3 2.0 VGS ,Gate-to-source Voltage(V) 3 5 7 9 0.6 -50 0 50 100 150 Fig.4 Normalized OnResistance Tj ,Junction Temperature(C) Normalized -VGS(th)(V) 1 1.5 2 Tj = 150C -IS(A) 1 Tj = 25C 1.0 0.5 0 0 Fig.5 Forward Characteristics of Reverse Diode -VDS ,Source-to-Drain Voltage(V) 0.2 0.4 0.6 0.8 0.0 -50 Fig.6 Gate Threshold Voltage v.s. Junction Temperature Tj ,Junction Temperature(C) 0 50 100 150 WEITRON http://www.weitron.com.tw 4/6 06-May-05 WT6401 8 1000 f = 1.0MHz -VGS , Gate to Source Voltage(V) I D = 4A 6 VDS = 16V 2 C(pF) 4 100 Ciss Coss Crss 0 0 8 16 24 32 0 1 5 9 13 17 Fig 7. Gate Charge Characteristics 100,000 QG , Total Gate Charge(nC) VDS, Drain-to-Source Voltage(V) Fig 8. Typical Capacitance Characteristics 1 Duty factor = 0.5 0.2 10,00 Normalized Thermal Response(R ja) 0.1 0.1 0.05 PDM 1ms -I D(A) 1,000 10ms 0.100 0.01 0.01 t T 100ms TA = 25C Single Pulse Is DC Duty factor = t / T Peak Tj=PDM x R ju + Tu R ja=270C / W Single pulse 0.001 0.01 0.1 -VDS , Drain-to-Source Voltage(V) 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000 t, Pulse Width(s) Fig 9. Maximum Safe Operation Area VDS 90% Fig 10. Effective Transient Thermal Impedance VG QG -4.5V QGS 10% VGS td(on) tr td(off) tf QGD Charge Q Fig 11. Switching Time Circuit Fig.12 Gate Charge Waveform WEITRON http://www.weitron.com.tw 5/6 06-May-05 WT6401 SOT-23 Outline Dimension SOT-23 A TOP VIEW D E G H B C K J L M Dim A B C D E G H J K L M Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 WEITRON http://www.weitron.com.tw 6/6 06-May-05 |
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