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| WTC6401 P-Channel Enhancement Mode Power MOSFET 1 3 DRAIN DRAIN CURRENT -4.3 AMPERES DRAIN SOURCE VOLTAGE -12 VOLTAGE *Super High Dense Cell Design For Low RDS(ON) R DS(ON) <50m@V GS =-4.5V *Rugged and Reliable *Simple Drive Requirement *Fast Switching *SOT-23 Package Features: GATE SOURCE 2 3 1 2 SOT-23 Applications *Power Management in Notebook Computer *Portable Equipment *Battery Powered System Maximum Ratings(T =25 C Unless Otherwise Specified) A Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 ,(TA=25C) ,(TA=70C) Pulsed Drain Current 1 Symbol VDS VGS ID I DM PD R JA TJ , Tstg Value -12 8 -4.3 -3.4 -12 1.38 90 - 55~+150 Unit V A Total Power Dissipation(T A=25C) Maximum Thermal Resistace Junction-ambient 3 Operating Junction and Storage Temperature Range W C/W C Device Marking WTC6401=6401 http:www.weitron.com.tw WEITRON 1/6 06-May-05 WTC6401 Electrical Characteristics (TA = 25 Characteristic Unless otherwise noted) Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS=0,ID=-250A Gate-Source Threshold Voltage VDS=VGS,ID=-250A Gate-Source Leakage current VGS = 8V Drain-Source Leakage Current(Tj=25C) VDS =-16V,V GS =0 Drain-Source Leakage Current(Tj=70C) VDS =-12V,V GS =0 Drain-Source On-Resistance 2 VGS =-4.5V,I D=-4.3A VGS =-2.5V,I D=-2.5A VGS =-1.8V,I D=-2.0A Forward Transconductance VDS =-5.0,I D=-4.0A R DS(o n) 12 50 85 125 m IDSS -25 BV DSS VGS(Th) IGSS -12 V -1.0 100 -1 A nA g fs S Dynamic Input Capacitance VGS =0V,VDS =-15V,f=1.0MHz Output Capacitance VGS =0V,VDS =-15V,f=1.0MHz Reverse Transfer Capacitance VGS =0V,VDS =-15V,f=1.0MHz C iss C oss Crss 985 180 160 1580 pF http:www.weitron.com.tw WEITRON 2/6 06-May-05 WTC6401 Switching Turn-on Delay Time 2 VDS =-10V,V GS =-10V,I D=-1A,R D=10, R G =3.3 Rise Time VDS =-10V,V GS =-10V,I D=-1A,R D=10, R G =3.3 Turn-off De lay Time VDS =-10V,V GS =-10V,I D=-1A,R D=10, R G =3.3 Fall Time VDS =-10V,V GS =-10V,I D=-1A,R D=10, R G =3.3 Total Gate Charge 2 VDS =-12V,V GS =-4.5V,I D=-4.0A Gate-Source Charge VDS =-12V,V GS =-4.5V,I D=-4.0A Gate-Source Change VDS =-12V,V GS =-4.5V,I D=-4.0A td (on) 8 11 54 36 15 1.3 4 ns t d (off) 24 nC tr tf Qg Q gs Q gd Source-Drain Diode Characteristics Forward On Voltage VGS =0V,IS=-1.2A 2 VSD 2 - 39 26 1.2 - V ns nC Reverse Recovery Time VGS =0V,IS=-4.0A, dl/dt=100A/s Reverse Recovery Charge VGS =0V,IS=-4.0A, dl/dt=100A/s Trr Q rr Note: 1. Pulse width limited by max, junction temperature. 2. pulse width300s, duty cycle2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 270/W when mounted on min, copper pad. http:www.weitron.com.tw WEITRON 3/6 06-May-05 WTC6401 16 14 14 TA=25C -5.0V -4.5V -3.0V -2.5V 12 TA=150C -5.0V -4.5V -3.0V -2.5V -I D ,DRAIN CURRENT (A) ID ,Drain Current (A) 12 10 8 6 4 2 0 0 1 2 3 4 5 10 8 6 4 2 0 VG=-1.8V VG=-1.8V 6 0 2 4 6 8 FIG.1 Typical Output Characteristics 70 1.6 -VDS ,DRAIN-TO-SOURCE VOLTAGE(V) Fig.2 Typical Output Characteristics VDS ,Drain-to-source Voltage(V) I D = -3A TA = 25C Normalized RDs(on) 60 1.4 I D = -4A VG = -4.5V 1.2 RDs(on) (m) 1.0 50 0.8 40 1 Fig.3 On-Resistance v.s. Gate Voltage 3 2.0 VGS ,Gate-to-source Voltage(V) 3 5 7 9 0.6 -50 0 50 100 150 Fig.4 Normalized OnResistance Tj ,Junction Temperature(C) Normalized -VGS(th)(V) 1 1.5 2 Tj = 150C -IS(A) 1 Tj = 25C 1.0 0.5 0 0 0.2 0.4 0.6 0.8 0.0 -50 Fig.5 Forward Characteristics of Reverse Diode -VDS ,Source-to-Drain Voltage(V) Fig.6 Gate Threshold Voltage v.s. Junction Temperature Tj ,Junction Temperature(C) 0 50 100 150 WEITRON http://www.weitron.com.tw 4/6 06-May-05 WTC6401 8 10000 -VGS , Gate to Source Voltage(V) I D = -4A 6 f = 1.0MHz VDS = -16V 2 C(pF) 4 1000 Ciss Coss Crss 0 0 8 16 24 32 10 1 5 9 13 17 Fig 7. Gate Charge Characteristics 100,000 QG , Total Gate Charge(nC) VDS, Drain-to-Source Voltage(V) Fig 8. Typical Capacitance Characteristics 1 Duty factor = 0.5 0.2 0.1 0.1 0.05 PDM 10,00 1ms 1,000 Normalized Thermal Response(R ja ) -I D(A) 10ms 0.100 0.01 0.01 t T 100ms TA = 25C Single Pulse Is DC 1 10 100 Single pulse Duty factor = t / T Peak Tj=PDM x R ja + Ta R ja =270C / W 0.01 0.1 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 -VDS , Drain-to-Source Voltage(V) t, Pulse Width(s) Fig 9. Maximum Safe Operation Area VDS 90% Fig 10. Effective Transient Thermal Impedance VG QG -4.5V QGS 10% VGS td(on) tr td(off) tf QGD Charge Q Fig 11. Switching Time Circuit Fig.12 Gate Charge Waveform WEITRON http://www.weitron.com.tw 5/6 06-May-05 WTC6401 SOT-23 Outline Dimension SOT-23 A TOP VIEW D E G H B C K J L M Dim A B C D E G H J K L M Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 WEITRON http://www.weitron.com.tw 6/6 06-May-05 |
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