 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| WTP772 WTP882 PNP/NPN Epitaxial Planar Transistors P b Lead(Pb)-Free TO-251 1.BASE 2.COLLECTOR 3.EMITTER 123 ABSOLUTE MAXIMUM RATINGS (Ta=25C) Rating Symbol Collector-Emitter Voltage Collector-B ase Voltage Emitter-B ase Voltage Collector Current (DC) Collector Current (Pulse)1 B ase Current Total Device Dissipation Tc=25 C TA=25C Junction Temperature Storage, Temperature VCEO VCB O VEB O I C(DC) IC (Pulse) IB (Pulse) PD Tj Tstg PNP/WTP772 NPN/WTP882 -30 -40 -5.0 -3.0 -7.0 -0.6 10 1.4 150 30 40 5.0 3.0 Unit 7.0 0.6 Vdc Vdc Vdc Adc Adc Adc W C C -55 to +150 Device Marking WT P 7 7 2 =B 7 7 2 , WT P 8 8 2 =D8 8 2 ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit Collector-Emitter Breakdown Voltage (I C= -10/ 10 mAdc, I B =0) Collector-B ase B reakdown Voltage (I C = -100/ 100 Adc, I E =0) Emitter-B ase B reakdown Voltage (I E = -100/ 100 Adc, I C =0) Collector Cutoff Current (VCE = -30/ 30 Vdc, I B =0) Collector Cutoff Current (VCB = -40/ 40 Vdc, I E =0) Emitter Cutoff Current (VEB = -6.0/ 6.0Vdc, I C =0) N OT E : 1 . P W 3 5 0 us , duty cycle 2 % V(B R)CEO -30/ 30 V(B R)CB O -40/ 40 V(B R)EB O -5.0/ 5.0 I CE0 I CB O I EB O - -1.0/ 1.0 -1.0/ 1.0 -1.0/ 1.0 Vdc Vdc Vdc uAdc uAdc uAdc WEITRON http://www.weitron.com.tw WTP772 WTP882 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min TYP Max Unit ON CHARACTERISTICS DC Current Gain (IC= -1.0/1.0 Adc, VCE=-2.0/2.0Vdc) DC Current Gain (IC= -100/100 mAdc, VCE= -2.0/2.0 Vdc) Collector-Emitter Saturation Voltage (IC= -2.0/2.0 Adc, IB= -0.2/0.2mAdc) Base-Emitter Saturation Voltage (IC= -2.0/2.0 Adc, IB= -0.2/0.2mAdc) Current-Gain-Bandwidth Product (IC= -0.1/0.1 mAdc, VCE=-5.0/5.0 Vdc, f=10MHz) hFE (1) hFE (2) VCE(sat) VBE(sat) fT 60 32 - - 400 -0.5/0.5 -2.0/2.0 Vdc Vdc 80/90 - MHz Classification of hFE(1) Rank Range R 60-120 O 100-200 Y 160-320 GR 200-400 WEITRON http://www.weitron.com.tw WTP772 WTP882 F1. Total Power Dissipation VS. Ambient Temperature NOTE F.2 Derating Curve for All Types dT-Percentage of Rated Current-% PT-Total Power Dissipation-W 10 8 6 4 2 0 10 25 9 cm 2 1. Aluminum heat sink of 1.0 mm thickness. 2. With no insulator film. 3. With silicon compound. 100 80 60 40 20 0 0 50 S/ bl im i ted ti pa si is D cm 0c m 2 ite fin in at he nk si 2 on lim ite d Without heat sink 50 100 150 100 150 Ta-Amient Temperature-C Tc,Case Temperature(C) F4. Safe Operating Areas 10 Ic(max),Pulse Ic(max),DC F3. Thermal Resistance VS. Pulse Width 4Rth-Thermal Resistance- C/W 30 10 -Ic,Collector Current(A) VCE=10V IC =1.0A Duty=0.001 10 PW (Duty< 10 ms50 %) P Cycle < mS 1m S W =1 3 00 1 1 0.1 0.3 0.03 0.01 NOTE 1. Tc=25 C 2. Curves must be derated linearly with increase of temperature and Duty Cycle. 1 3 6 10 0.1 0.3 1 3 10 30 100 300 1000 30 VCEO MAX 60 3 0.3 Di s L sipa (S ing imite tion d le no nr s/b ep Lim eti tiv ite ep d uls e) PW-Pulse Width-ms VCE-Collector to Emitter Voltage-V S 1m 0. us 100 F5. Collector Current VS. Collector To Emitter Voltage -2.0 WTP772 WTP882 F6. Collector Current VS. Collector To Emitter Voltage 2.0 -Ic,Collector Current(A) -Ic,Collector Current(A) -1.6 -1.2 Pulse Test IB=-10mA IB=-9mA IB=-8MA IB=-7mA IB=-6mA IB=-5mA IB=-4mA IB=-3mA IB=-2mA IB=-1mA 0 Pulse Test IB=10mA IB=9mA IB=8MA IB=7mA IB=6mA IB=5mA IB=4mA IB=3mA IB=2mA IB=1mA 0 1.6 1.2 -0.8 0.8 -0.4 0.4 0 -4 -8 -12 -16 -20 0 vCE -Collector-Emitter Voltage(V) 4 8 12 16 20 vCE -Collector-Emitter Voltage(V) WEITRON http://www.weitron.com.tw WTP772 WTP882 VCE(sat)-Collector Saturation Voltage(V) F8. VCE(sat), VBE(sat),-Ic 10 6 3 1 0.6 0.3 0.1 0.06 0.03 0.01 0.006 0.003 1000 600 hFE , -DC Current Gain WTP772 h FE VCE=2.0V Puse Test VBE(sat)-Base Saturation Voltage(V) F7. h FE, VBE -I c 300 100 60 30 10 6 3 1 0.001 0.003 0.01 VBE(sat) WTP772 WTP882 2 WTP88 sa t) VBE WTP772 WTP882 WTP772 VC E( WT P88 2 0.03 0.1 0.3 1 3 10 0.001 0.003 0.01 0.03 0.1 0.3 1 3 10 Ic-Collector Current(A) Ic-Collector Current(A) F9. fT - Ic f T -Gain Bandwidth Product(MHZ) 1000 F10. Cob -VCB , Cib -VCE Cob-Output Capacitance(PF ) Cib-Input Capacitance(PF ) 300 100 VCE=5.0V Forecd air Cooling (with heat sink) 300 100 60 30 WTP 882 WTP77 2 Cib f=1.0MHz I E =0(Cob) IC=0(Cib) WTP882 WTP772 WTP77 2 30 10 WTP 882 Cob 10 6 3 3 1 0.01 1 3 6 10 30 60 0.03 0.1 0.3 1 VCB -Collector to Base Voltage(V) VEB -Emitter to Base Voltage(V) Ic-Collector Cu rrent(A) WEITRON http://www.weitron.com.tw WTP772 WTP882 TO-251 Outline Dimensions unit:mm E A 4 G H B J 1 2 3 N D M K C L Dim A B C D E G H J K L M N TO-251 Min 6.40 6.80 0.50 2.20 0.45 1.00 5.40 0.45 0.90 6.50 - Max 6.80 7.20 0.80 2.30 2.50 0.55 1.60 5.80 0.69 1.50 0.90 1. Emitter 2. Base 3. Collector WEITRON http://www.weitron.com.tw |
Price & Availability of WTP882
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |