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| N-Channel Power MOSFET DMOS Structure Low On-State Resistance : 0.035(MAX.) Ultra High-Speed Switching SOP-8 Package Two FET Devices Built-in APPLICATIONS Notebook PCs Cellular and portable phones On-board power supplies Li-ion battery systems GENERAL DESCRIPTION The XP133A1235SR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Two FET devices are built into the one package Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOP-8 package makes high density mounting possible. FEATURES Low On-State Resistance : Rds(on)=0.035(Vgs= 4.5V) : Rds(on)=0.048(Vgs = 2.5V) Ultra High-Speed Switching Driving Voltage : 2.5V High Density Mounting : SOP-8 PIN CONFIGURATION PIN ASSIGNMENT PIN NUMBER 1 2 3 4 5~6 7~8 PIN NAME S1 G1 S2 G2 D2 D1 FUNCTION Source Gate Source Gate Drain Drain EQUIVALENT CIRCUIT ABSOLUTE MAXIMUM RATINGS Ta = 25 PARAMETER Drain-Source Voltage Gate-Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Channel Power Dissipation * Channel Temperature Storage Temperature Range SYMBOL RATINGS UNITS Vdss Vgss Id Idp Idr Pd Tch Tstg 20 12 6 20 6 2 150 -55~150 V V A A A W * When implemented on a glass epoxy PCB XP133A1235SR ETR1112_001.doc 1475 XP133A1235SR ELECTRICAL CHARACTERISTICS DC Characteristics PARAMETER Drain Cut-Off Current Gate-Source Leak Current Gate-Source Cut-Off Voltage Drain-Source On-State Resistance * Forward Transfer Admittance * Body Drain Diode Forward Voltage SYMBOL Idss Igss Vgs(off) Rds(on) | Yfs | Vf CONDITIONS Vds=20V, Vgs=0V Vgs=12V, Vds=0V Id=1mA, Vds=10V Id=3A, Vgs=4.5V Id=3A, Vgs=2.5V Id=4A, Vds=10V If=6A, Vgs=0V MIN. 0.5 TYP. 0.026 0.035 14 0.85 MAX. 10 1 1.2 0.035 0.048 1.1 Ta = 25 UNITS A A V S V * Effective during pulse test. Dynamic Characteristics PARAMETER Input Capacitance Output Capacitance Feedback Capacitance SYMBOL Ciss Coss Crss Vds=10V, Vgs=0V f=1MHz CONDITIONS MIN. TYP. 760 430 200 MAX. - Ta = 25 UNITS pF pF pF Switching Characteristics PARAMETER Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time SYMBOL td (on) tr td (off) tf Vgs=5V, Id=3A Vdd=10V CONDITIONS MIN. TYP. 10 20 55 15 MAX. - Ta = 25 UNITS ns ns ns ns Thermal Characteristics PARAMETER Thermal Resistance (Channel-Ambience) SYMBOL Rth (ch-a) CONDITIONS Implement on a glass epoxy resin PCB MIN. TYP. 62.5 MAX. UNITS /W 1476 XP133A1235SR TYPICAL PERFORMANCE CHARACTERISTICS 1477 XP133A1235SR TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (11) Standardized transition Thermal Resistance vs. Pulse Width 1478 |
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