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| P-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.45 (max) Ultra High-Speed Switching Gate Protect Diode Built-in SOT - 23 Package Applications Notebook PCs Cellular and portable phones On - board power supplies Li - ion battery systems General Description The XP152A11E5MR is a P-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible. Features Low on-state resistance : Rds (on) = 0.25 ( Vgs = -10V ) Rds (on) = 0.45 ( Vgs = -4.5V ) Ultra high-speed switching Gate Protect Diode Built-in Operational Voltage : -4.5V High density mounting : SOT - 23 u Pin Configuration D 3 Pin Assignment PIN NUMBER 1 2 3 PIN NAME G S D FUNCTION Gate Source Drain 1 G 2 S SOT - 23 Top View Equivalent Circuit 3 Absolute Maximum Ratings Ta=25 C O PARAMETER Drain - Source Voltage Gate - Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Continuous Channel Power Dissipation (note) SYMBOL Vdss Vgss Id Idp Idr Pd Tch Tstg RATINGS -30 + 20 -0.7 -2.8 -0.7 0.5 150 -55 to 150 UNITS V V A A A W C C 1 P - Channel MOS FET ( 1 device built-in ) 2 Channel Temperature Storage Temperature O O ( note ) : When implemented on a ceramic PCB Electrical Characteristics DC characteristics PARAMETER Drain Cut-off Current Gate-Source Leakage Current Gate-Source Cut-off Voltage Drain-Source On-state Resistance ( note ) Forward Transfer Admittance ( note ) Body Drain Diode Forward Voltage ( note ) : Effective during pulse test. SYMBOL Idss Igss Vgs (off ) Rds ( on ) | Yfs | Vf CONDITIONS Vds = - 30 , Vgs = 0V Vgs = 20 , Vds = 0V Id = -1mA , Vds = - 10V Id = - 0.4A , Vgs = - 10V Id = - 0.4A , Vgs = - 4.5V Id = - 0.4A , Vds = - 10V If = - 0.7A , Vgs = 0V - 1.0 0.2 0.35 1 -0.8 - 1.1 MIN TYP MAX - 10 10 Ta=25C UNITS A A V S V - 3.0 0.25 0.45 Dynamic characteristics PARAMETER Input Capacitance Output Capacitance Feedback Capacitance SYMBOL Ciss Coss Crss Vds = - 10V , Vgs = 0V f = 1 MHz CONDITIONS MIN TYP 160 120 50 MAX Ta=25C UNITS pF pF pF u Switching characteristics PARAMETER Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SYMBOL td ( on ) tr td ( off ) tf Vgs = - 5V , Id = - 0.4A Vdd = - 10V CONDITIONS MIN TYP 10 25 25 40 MAX Ta=25C UNITS ns ns ns ns Thermal characteristics PARAMETER Thermal Resistance ( channel - surroundings ) SYMBOL Rth ( ch - a ) CONDITIONS Implement on a ceramic PCB MIN TYP 250 MAX UNITS C / W Electrical Characteristics u Electrical Characteristics Capacitance vs. Drain/Source Voltage Switching Time vs. Drain Current Gate/Source Voltage vs. Gate Charge Reverse Drain Current vs. Source/Drain Voltage u Standardized Transition Thermal Resistance vs. Pulse Width |
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