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| Composite Transistors XP1D873 Silicon N-channel junction FET Unit: mm 2.10.1 0.425 1.250.1 0.425 0.20.05 0.12 - 0.02 +0.05 For analog switching 0.65 s Features q q q 0.9 0.1 s Basic Part Number of Element q 0 to 0.1 2SK1103 x 2 elements 1 : Source (FET1) 2 : Drain (FET1, 2) 3 : Source (FET2) 0.70.1 0.2 Two elements incorporated into one package. (Drain-coupled FETs) Reduction of the mounting area and assembly cost by one half. Low-frequency and low-noise J-FET. 2.00.1 1 2 3 5 0.65 4 0.20.1 s Absolute Maximum Ratings Parameter Gate to drain voltage Rating Drain current of element Gate current Total power dissipation Overall Channel temperature Storage temperature Symbol VGDS ID IG PT Tch Tstg (Ta=25C) Ratings -50 30 10 150 150 -55 to +150 Unit V mA mA mW C C 4 : Gate (FET2) 5 : Gate (FET1) EIAJ : SC-88A S-Mini Type Package (5-pin) Marking Symbol: OC Internal Connection 1 2 3 4 FET 1 5 FET 2 s Electrical Characteristics Parameter Drain voltage Drain current Gate cutoff current Gate to source cutoff voltage Mutual conductance Drain ON resistance Common source short-circuit input capacitance Common source reverse transfer capacitance Common source short-circuit output capacitance (Ta=25C) Symbol VGDS IDSS IGSS VGSC gm RDS(on) Ciss Crss Coss Conditions IG = -10A, VDS = 0 VDS = 10V, VGS = 0 VGS = -30V, VDS = 0 VDS = 10V, ID = 10A VDS = 10V, ID = 1mA, f = 1kHz VDS = 10mV, VGS = 0 VDS = 10V, VGS = 0, f = 1MHz VDS = 10V, VGS = 0, f = 1MHz VDS = 10V, VGS = 0, f = 1MHz 1.8 -1.5 2.5 300 7 1.5 1.5 min -50 0.2 6.0 -10 -3.5 typ max Unit V mA nA V mS pF pF pF 1 Composite Transistors PT -- Ta 250 2.5 Ta=25C XP1D873 ID -- VDS 2.5 ID -- VGS Total power dissipation PT (mW) 200 2.0 2.0 VGS=0V Drain current ID (mA) Drain current ID (mA) Ta=-25C 1.5 25C 150 1.5 -0.1V -0.2V 1.0 -0.3V -0.4V 0.5 100 1.0 75C 50 0.5 0 0 20 40 60 80 100 120 140 160 0 0 1 2 3 4 5 6 0 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0 Ambient temperature Ta (C) Drain to source voltage VDS (V) Gate to source voltage VGS (V) | Yfs | -- VGS 5 | Yfs | -- ID Common source short-circuit input capacitance, Common source reverse transfer capacitance, Ciss, Crss, Coss (pF) Common source short-circuit output capacitance Forward transfer admittance |Yfs| (mS) VDS=10V Ta=25C 2.5 VDS=10V Ta=25C 10 Ciss, Crss, Coss -- VDS VGS=0 f=1MHz Ta=25C 8 Forward transfer admittance |Yfs| (mS) 4 2.0 IDSS=10mA 1.5 3 IDSS=10mA 2 6 Ciss 1.0 4 1 0.5 2 Coss Crss 0 -1.6 0 -1.2 -0.8 -0.4 0 0 2 4 6 8 0 1 10 100 Gate to source voltage VGS (V) Drain current ID (mA) Drain to source voltage VDS (V) 2 |
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