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| Composite Transistors XP04654 (XP4654) Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For high-speed switching Features * Two elements incorporated into one package * Reduction of the mounting area and assembly cost by one half 1 2 3 (0.425) Unit: mm 0.12+0.05 -0.02 0.20.05 6 5 4 1.250.10 2.10.1 Basic Part Number * 2SC3757 + 2SA1738 10 (0.65) (0.65) 1.30.1 2.00.1 0.90.1 Parameter Tr1 Collector-base voltage (Emitter open) Collector-emitter voltage (E-B short) Emitter-base voltage (Collector open) Collector current Peak collector current Tr2 Collector-base voltage (Emitter open) Collector-emitter voltage (E-B short) Emitter-base voltage (Collector open) Collector current Peak collector current Overall Total power dissipation Junction temperature Storage temperature Symbol VCBO VCES VEBO IC ICP VCBO VCES VEBO IC ICP PT Tj Tstg Rating 40 40 5 100 300 -15 -15 -4 -50 -100 150 150 -55 to +150 Unit 1: Emitter (Tr1) 2: Base (Tr1) 3: Collector (Tr2) EIAJ: SC-88 0 to 0.1 V V V mA mA V V V mA mA mW C C Marking Symbol: ED Internal Connection 6 5 4 Tr1 0.9+0.2 -0.1 Absolute Maximum Ratings Ta = 25C 4: Emitter (Tr2) 5: Base (Tr2) 6: Collector (Tr1) SMini6-G1 Package Tr2 1 2 3 Note) The part number in the parenthesis shows conventional part number. Publication date: February 2004 SJJ00188BED 0.20.1 5 1 XP04654 Electrical Characteristics Ta = 25C 3C * Tr1 Parameter Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Turn-on time Turn-off time Storage time Symbol ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob ton toff tstg Conditions VCB = 40 V, IE = 0 VEB = 4 V, IC = 0 VCE = 1 V, IC = 10 mA IC = 10 mA, IB = 1 mA IC = 10 mA, IB = 1 mA VCB = 10 V, IE = -10 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz Refer to the switching time measurement circuit 450 2 17 17 10 6 60 0.17 Min Typ Max 0.1 0.1 320 0.25 1.0 Unit A A V V MHz pF ns ns ns Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. * Tr2 Parameter Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Symbol ICBO IEBO hFE1 hFE2 Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Turn-on time Turn-off time Storage time VCE(sat) fT Cob ton toff tstg Conditions VCB = -8 V, IE = 0 VEB = -3 V, IC = 0 VCE = -1 V, IC = -10 mA VCE = -1 V, IC = -1 mA IC = -10 mA, IB = -1 mA VCB = -10 V, IE = 10 mA, f = 200 MHz VCB = -5 V, IE = 0, f = 1 MHz Refer to the switching time measurement circuit 800 50 30 - 0.1 1 500 1 12 20 19 - 0.2 V MHz pF ns ns ns Min Typ Max - 0.1 - 0.1 150 Unit A A Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Common characteristics chart PT Ta 250 Total power dissipation PT (mW) 200 150 100 50 0 0 40 80 120 160 Ambient temperature Ta (C) 2 SJJ00188BED XP04654 Characteristics charts of Tr1 Switching time measurement circuit ton , toff test circuit 220 VIN = 10 V 3.3 k 50 3.3 k VBB = -3 V 0.1 F VOUT A 50 VCC = 3 V VIN = 10 V 0.1 F 50 910 500 500 VBB = 2 V 1 k 90 VCC = 10 V tstg test circuit 0.1 F VOUT 10% VIN 10% 90% VOUT 90% ton toff VOUT tstg VIN 10% 10% (Waveform at A) IC VCE Ta = 25C IB = 3.0 mA 2.5 mA 2.0 mA 1.5 mA 60 1.0 mA 40 0.5 mA 20 VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) 100 VBE(sat) IC 100 120 100 Base-emitter saturation voltage VBE(sat) (V) IC / IB = 10 Collector current IC (mA) 10 10 80 1 25C 0.1 Ta = 75C -25C 1 Ta = -25C 25C 75C 0.1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 0.01 0.1 0.01 1 10 100 1 10 100 1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) hFE IC 600 VCE = 1 V 600 fT I E Collector output capacitance C (pF) (Common base, input open circuited) ob 6 Cob VCB VCB = 10 V Ta = 25C IE = 0 f = 1 MHz Ta = 25C Forward current transfer ratio hFE Transition frequency fT (MHz) 500 500 5 400 400 4 300 300 3 200 Ta = 75C 25C -25C 200 2 100 100 1 0 0.1 1 10 100 0 -1 -10 -100 -1 000 0 1 10 100 Collector current IC (mA) Emitter current IE (mA) Collector-base voltage VCB (V) SJJ00188BED 3 XP04654 Characteristics charts of Tr2 Switching time measurement circuit ton , toff test circuit VBB 2 k VIN 0.1 F 51 52 VCC = -1.5 V 62 VOUT VIN 0.1 F 51 tstg test circuit VBB = -10 V VCC = -3 V 508 34 30 VOUT VIN VOUT 0 10% 90% 90% ton 10% toff VIN = 9.8 V VBB = -8.0 V VIN 0 VOUT 90% 90% tstg VIN = 9.0 V VIN = -5.8 V VBB = Ground IC VCE Ta = 25C IB = -600 A -500 A -40 -400 A -300 A -200 A -20 -100 A -10 VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) -100 IC / IB = 10 VBE(sat) IC -100 -60 -50 Collector current IC (mA) -10 Ta = 75C 25C -25C -1 Base-emitter saturation voltage VBE(sat) (V) IC / IB = 10 -10 Ta = -25C 25C 75C -30 -1 - 0.1 - 0.1 0 0 -2 -4 -6 -8 -10 -12 - 0.01 -1 -10 -100 -1 000 - 0.01 -1 -10 -100 -1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) hFE IC 240 VCE = -10 V fT I E Collector output capacitance C (pF) (Common base, input open circuited) ob 2 400 VCB = -10 V f = 200 MHz Ta = 25C 2.4 Cob VCB IE = 0 f = 1 MHz Ta = 25C Forward current transfer ratio hFE Transition frequency fT (MHz) 200 2 000 2.0 160 1 600 1.6 120 Ta = 75C 1 200 1.2 80 25C -25C 800 0.8 40 400 0.4 0 - 0.1 -1 -10 -100 0 1 10 100 0 -1 -10 -100 Collector current IC (mA) Emitter current IE (mA) Collector-base voltage VCB (V) 4 SJJ00188BED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2003 SEP |
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