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| Transys Electronics LIMITED TO-220 Plastic-Encapsulated Transistors 2SA940 TRANSISTOR (PNP) TO-220 1. BASE 2. COLLECTOR FEATURES Power dissipation PCM : 1.5 W (Tamb=25) 3. EMITTER Collector current : -1.5 A ICM Collector-base voltage V V(BR)CBO : -150 Operating and storage junction temperature range TJ, Tstg: -55 to +150 123 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat) VBE unless otherwise specified) Test conditions MIN TYP MAX UNIT V V V Ic=-100A, IE=0 Ic=-1mA, IB=0 IE=-100A, IC=0 VCB=-120V, IE=0 VEB=-5V, IC=0 VCE=-10V, IC=-500mA IC=-500mA, IB=-50mA VCE=-10V, IC=-500mA VCE=-10V, IC=-500mA VCB=-10V, IE=0, f=1MHz -150 -150 -5 -10 -10 40 140 -1.5 -0.65 A A V V MHz pF -0.85 4 55 fT Cob |
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