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Preliminary Data Sheet No. PD60083I
IR51H(D)224 IR51H(D)320 IR51H(D)420
SELF-OSCILLATING HALF BRIDGE
Features
* * * *
Output Power MOSFETs in half-bridge configuration High side gate drive designed for bootstrap operation Bootstrap diode integrated into package (HD type) Accurate timing control for both Power MOSFETs Matched delay to get 50% duty cycle Matched deadtime of 1.2us * Internal oscillator with programmable frequency
Product Summary
VIN (max) 250V (IR51H(D)224) 400V (IR51H(D)310) 500V (IR51H(D)420) Duty Cycle 50% Deadtime Rds(on) 1.2s 1.1W (IR51H(D)224) 3.0W (IR51H(D)310) 3.6W (IR51H(D)420) 2.0W
f=
1 1. 4 x ( RT + 75 ) x CT
* 15.6V Zener clamped Vcc for offline operation * Half-bridge output is out of phase with RT * Micropower startup
PD (TA = 25oC)
Package
Description
The IR51H(D)XXX are complete high voltage, high speed, selfoscillating half-bridge circuits. Proprietary HVIC and latch immune CMOS technologies, along with the HEXFET(R) power MOSFET technology, enable ruggedized single package construction. The front-end features a programmable oscillator which functions similar to the CMOS 555 timer. The supply to the control circuit has a zener clamp to simplify offline operation. The output features two HEXFETs in a half-bridge configuration with an internally set deadtime designed for minimum cross-conduction in the half-bridge. Propagation delays for the high and low side
power MOSFETs are matched to simplify use in 50% duty cycle applications. The device can operate up to 500 volts.
Typical Connection
DC Bus VIN
D1
IR51H(D)XXX
1 Vcc VB 6
External Fast recovery diode D1 is not required for HD type
2 RT 3 CT 4
RT
VIN
9
CT
VO
7
COM
TO, LOAD
COM
IR51H(D)224 IR51H(D)320 IR51H(D)420
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Symbol
VIN
Definition
High voltage supply -224 -320 -420
Minimum
- 0.3 - 0.3 - 0.3 Vo - 0.3 -0.3 - 0.3 - 0.3 -- -5 -- -- -- -55 -55 --
Maximum
250 400 500 Vo +2.5 VIN + 0.3 Vcc + 0.3 Vcc + 0.3 25 5 3.5 2.00 60 150 150 300
Units
VB VO VRT VCT Icc IRT dV/dt PD RthJA TJ TS TL
High side floating supply Half-bridge output RT voltage CT voltage Supply current (note 1) RT output current Peak diode recovery Package power dissipation @ TA +25C Thermal resistance, junction to ambient Junction temperature Storage temperature Lead temperature (soldering, 10 seconds)
V
mA V/ns W oC/W
oC
NOTE 1: This IC contains a zener clamp structure between VCC and COM which has a nominal breakdown voltage of 15.6V. Please note that this supply pin should not be driven by a DC, low impedance power source greater than the VCLAMP specified in the Electrical Characteristics Section
2
IR51H(D)224 IR51H(D)320 IR51H(D)420
Recommended Operating Conditions
The input/output logic timing diagram is shown in figure 1. For proper operation, the device should be used within the recommended conditions. Symbol
VB VIN
Definition
High side floating supply absolute voltage High voltage supply -224 -320 -420 -224 -320 -420 -224 -320 -420
Minimum
Vo + 10 -- -- -- -3.0 (note 2) -- -- -- -- -- -- (note 3) -40
Maximum
Vo + Vclamp 250 400 500 VIN 1.1 0.9 0.7 0.7 0.6 0.5 5 125
Units
V
VO ID
Half-bridge output voltage Continuous drain current (TA = 25C)
A
(TA = 85C)
ICC TA
Supply current Ambient temperature
mA C
NOTE 2: Care should be taken to avoid switching conditions where the VS node flies inductively below ground by more than 5V. NOTE 3: Enough current should be supplied to the VCC lead of the IC to keep the internal 15.6V zener diode clamping the voltage at this lead.
Dynamic Electrical Characteristics
VBIAS (VCC, VBS) = 12V, TA = 25oC unless otherwise specified. Symbol Definition
trr Reverse recovery time (MOSFET body diode) -224 -320 -420
Min.
-- -- -- -- -- -- --
Typ.
200 270 240 0.7 0.6 0.5 50
Max.
-- -- -- -- -- -- --
Units Test Conditions
ns IF=1.1A IF=900mA di/dt IF=700mA =100 IF=1.1A IF=900mA A/s IF=700mA fosc = 20 kHz
Qrr
D
Reverse recovery charge (MOSFET body diode) -224 -320 -420 RT duty cycle
C %
3
IR51H(D)224 IR51H(D)320 IR51H(D)420
Static Electrical Characteristics
VBIAS (VCC, VB) = 12V, TA = 25oC unless otherwise specified. Symbol Definition VCCUV+ VCC supply undervoltage positive going
threshold VCC supply undervoltage negative going threshold IQCC Quiescent VCC supply current VCLAMP VCC zener shunt clamp voltage IQBS Quiescent VBS supply current VCCUVlOS fOSC Offset supply leakage current Oscillator frequency
Min. --
-- -- -- -- -- -- --
Typ. 8.4
8.0 300 15.6 30 -- 20 100 0.001 100 20 200 20 200 100 8.0 4.0
Max. --
-- -- -- -- 50 -- -- 1.0 -- -- -- -- -- -- -- --
UnitsTest Conditions V
V A V A VCC > VCCUV ICC = 5mA VB = VIN = 500V RT = 35.7 k CT = 1 nF RT = 7.04 k C T = 1 nF Note 2 IRT = 100A IRT = -1mA IRT = 100A IRT = -1mA IRT = 100A
kHz A
ICT VCTUV VRT+ VRTVRTUV VCT+ VCT-
CT input current CT undervoltage lockout RT high level output voltage, VCC - R T RT low level output voltage RT undervoltage lockout, VCC - RT 2/3 VCC threshold 1/3 VCC threshold -224 -320 -420 -224 -320 -420
-- -- -- -- -- -- -- -- --
mV
kHz IF=1.1A IF=900mA di/dt IF=700mA =100 IF=1.1A IF=900mA A/s IF=700mA
Rds(on) Static-drain-to-source on-resistance
--
-- -- -- -- --
1.1
1.8 3.0 0.85 0.7 0.8
--
-- -- -- -- --
VSD
Diode forward voltage
V
4
IR51H(D)224 IR51H(D)320 IR51H(D)420
Functional Block Diagram
V D1
B
VIN 6 9
1 Vcc H 2 R
T O
IRFCXXX
IR2151
V
S
7 VO
L 3 C
T
O
IRFCXXX
4 COM
Fast recovery diode D1 is incorporated in IR51HDXXX only
Lead Definitions
Symbol
VCC RT CT
Lead Description
Logic and internal gate drive supply voltage. An internal zener clamp diode at 15.6 V norminal is included to allow the VCC to be current fed directly from VIN typically by means of a high value resistor. Oscillator timing resistor output; a resistor is connected from RT to CT. RT is out of phase with the halfbridge output (VO). Oscillator timing capacitor input; a capacitor is connected from C T to COM in order to program the oscillator frequency according to the following equation:
f=
1 1. 4 x ( RT + 75 ) x CT
VB VIN VO COM
CT PIN also invokes shutdown function (see note 2) where 75 is the effective impedence of the RT output stage. High side gate drive floating supply. For bootstrap operation a high voltage fast recovery diode is needed to feed from VCC to VB. (HD type circuits incorporate this diode). High voltage supply Half Bridge output Logic and low side of half bridge return
5
IR51H(D)224 IR51H(D)320 IR51H(D)420
Lead Assignments
9 6 1 2 3 4 7
1 2 3 4
Vcc RT CT COM
6 7 9
VB VO VIN
9 Lead SIP without Leads 5 and 8
Vccuv+
V CLAMP
Vcc
RT CT V+
VO
0
Figure 1. Input/Output Timing Diagram
6
IR51H(D)224 IR51H(D)320 IR51H(D)420
Case Outline - 9 Lead SIP
NOTES: 1. Dimensioning and tolerancing per ANSI Y14.5M-1982 2. Controlling Dimension: INCH 3. Dimensions are shown in millimeters (inches)
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T 3Z2 Tel: (905) 453-2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: 65 838 4630 IR TAIWAN: 16 Fl. Suite D..207, Sec.2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 3/22/99 7

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