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| DATA SHEET MMBT2222A NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE FEATURES * NPN epitaxial silicon, planar design * Collector-emitter voltage VCE = 40V .056(1.40) .119(3.00) .110(2.80) 40 Volts POWER 225 mWatts SOT- 23 Unit: inch (mm) environment substance directive request MECHANICAL DATA Case: SOT-23, Plastic Terminals: Solderable per MIL-STD-202G, Method 208 Approx. Weight: 0.008 gram Marking: M2A Top View 3 Collector 1 BASE 3 COLLECTOR .083(2.10) .066(1.70) .006(.15) .002(.05) .006(.15)MAX .020(.50) .013(.35) 1 Base 2 Emitter 2 EMITTER ABSOLUTE RATINGS PA R A M E TE R C ol ct r-E m it rVolage lo e te t C ol ct r-B ase Volage lo e t E m it r-B ase Volage te t C ol ct rC urent-C ontnuous lo e r i S ym bol VC EO VC BO VEBO IC Val e u 40 75 6. 0 600 U nis t V V V mA THERMAL CHARACTERISTICS PA R A M E TE R M ax P ow erD i si aton ( ot 1) spi Ne Ther alR esi t nce ,Juncton t A m bi nt m sa io e Juncton Tem per t r i aue S t r ge Tem per t r oa aue S ym bol PTO T RJA TJ TI STG Val e u 225 556 - 5 t 150 5o - 5 t 150 5o O .044(1.10) .035(0.90) .103(2.60) .086(2.20) * Collector current IC = 600mA * Pb free product are available : 99% Sn above can meet Rohs .047(1.20) .007(.20)MIN U nis t mW C/ W O C C O Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in. STAD-MAY.11.2004 PAGE . 1 ELECTRICAL CHARACTERISTICS PA RA M E TE R C o lle c to r - E mi tte r B re a k d o wn Vo lta g e C o lle c to r - B a s e B re a k d o wn Vo lta g e E mi tte r - B a s e B re a k d o wn Vo lta g e B a s e C ut o f f C ur r e nt S ym b o l V (B R) C E O V (B R) C B O V (B R) E B O IBL IC E X C o l l e c t o r C ut o f f C ur r e nt IC B O E m i t t e r C ut o f f C ur r e nt IEBO V C E = 6 0 V , IE = 0 , V C E = 6 0 V , IE = 0 , T J = 1 2 5 O C V E B = 3 . 0 V , IC = 0 , IC = 0 . 1 m A , V C E = 1 0 V IC = 1 . 0 m A , V C E = 1 0 V IC = 1 0 m A , V C E = 1 0 V IC = 1 0 m A , V C E = 1 0 V , T J = 1 2 5 O C IC = 1 5 0 m A , V C E = 1 0 V ( N o t e 2 ) IC = 1 5 0 m A , V C E = 1 V ( N o t e 2 ) IC = 5 0 0 m A , V C E = 1 0 V ( N o t e 2 ) IC = 1 5 0 m A , IB = 1 5 m A IC = 5 0 0 m A , IB = 5 0 m A IC = 1 5 0 m A , IB = 1 5 m A IC = 5 0 0 m A , IB = 5 0 m A V C B = 1 0 V , IE = 0 , f = 1 M H z V C B = 0 . 5 V , IC = 0 , f = 1 M H z V C C =3 V,V B E =-5 V, IC = 1 5 0 m A , IB = 1 5 m A V C C =3 V,V B E =-5 V, IC = 1 5 0 m A , IB = 1 5 m A V C C = 3 0 V , IC = 1 5 0 m A IB 1 = IB 2 = 1 5 m A V C C = 3 0 V , IC = 1 5 0 m A IB 1 = IB 2 = 1 5 m A 35 50 75 35 100 50 40 0 .6 10 10 100 300 0 .3 1 .0 1 .2 2 .0 8 .0 25 10 25 225 60 nA uA nA Te s t C o n d i t i o n IC = 1 . 0 m A , IB = 0 IC = 1 0 u A , IE = 0 IE = 1 0 u A , IC = 0 V C E =6 0 V, V E B =3 .0 V V C E =6 0 V, V E B =3 .0 V M IN . 40 75 6 .0 T YP. MA X . 20 10 U ni t s V V V nA nA D C C ur r e nt G a i n hF E - C o l l e c t o r - E m i t t e r S a t ur a t i o n Vo l t a g e (No te 2 ) B a s e - E m i t t e r S a t ur a t i o n Vo l t a g e (No te 2 ) C o l l e c t o r - B a s e C a p a c i t a nc e E m i t t e r - B a s e C a p a c i t a nc e D e l a y Ti m e R i s e Ti m e S t o r a g e Ti m e F a l l Ti m e V C E (S AT) V B E (S AT) C CBO C EBO td tr ts tf V V pF pF ns ns ns ns Note 2: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%. SWITCHING TIME EQUIVALENT TEST CIRCUITS +30V +30V +16V 0 -2V < 2ns 1.0 to 100us Duty Cycle ~ 2.0% 200 +16V 0 1.0 to 100us Duty Cycle ~ 2.0% 200 1K CS* < 10pF -14V < 20ns 1K 1N914 -4V CS* < 10pF Scope rise time < 4ns * Total shunt capacitance of test jig, connectors, and oscilloscope Fig. 1. Turn-On Time Fig. 2. Turn-Off Time STAD-MAY.11.2004 PAGE . 2 ELECTRICAL CHARACTERISTICS CURVE 350 300 250 TJ = 100 C 200 hFE 150 100 50 0 0.1 1 10 100 1000 Collector Current, IC (mA) VCE = 10V TJ = 25 C TJ = 150 C 0.8 0.7 0.6 0.5 V BE (on) 0.4 0.3 0.2 VCE = 10V 0.1 0.0 0.1 1 10 100 1000 Collector Current, IC (mA) TJ = 100 C TJ = 150 C TJ = 25 C Fig. 3. Typical hFE vs Collector Current 500 450 400 350 IC/IB = 10 TJ = 150 C Fig. 4. Typical VBE vs Collector Current 1.2 IC/IB = 10 1.0 VCE (sat) (mV) 0.8 V BE (sat) (V) TJ = 25 C 0.6 TJ = 150 C 0.4 300 250 200 150 100 0.2 50 0 0.1 1 10 100 1000 Collector Current, IC (mA) TJ = 25 C TJ = 100 C 0.0 0.1 1 10 100 1000 Collector Current, IC (mA) Fig. 5. Typical VCE (sat) vs Collector Current 100 Fig. 6. Typical VBE (sat) vs Collector Current f=1 MHz Capacitance (pF) CIB (EB) 10 COB (CB) 1 0.1 1 10 100 Reverse Voltage, VR (V) Fig. 7. Typical Capacitances vs Reverse Voltage STAD-MAY.11.2004 PAGE . 3 MOUNTING PAD LAYOUT SOT-23 Unit: inch (mm) 0.035(0.9) 0.031(0.8) 0.037(0.95) ORDER INFORMATION * Packing information T/R - 12K per 13" plastic Reel T/R - 3.0K per 7" plastic Reel LEGAL STATEMENT IMPORTANT NOTICE This information is intended to unambiguously characterize the product in order to facilitate the customer's evaluation of the device in the application. The information will help the customer's technical experts determine that the device is compatible and interchangeable with similar devices made by other vendors. The information in this data sheet is believed to be reliable and accurate. The specifications and information herein are subject to change without notice. New products and improvements in products and product characterization are constantly in process. Therefore, the factory should be consulted for the most recent information and for any special characteristics not described or specified. Copyright Pan Jit International Inc. 2003 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract. The information presented is believed to be accurate and reliable, and may change without notice in advance. No liability will be accepted by the publisher for any consequence of use.Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. STAD-MAY.11.2004 0.078(2.0) PAGE . 4 |
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