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| Transys Electronics LIMITED TO-220 Plastic-Encapsulated Transistors TIP42A/42B/42C FEATURES Power dissipation PCM: 2 TRANSISTOR (PNP) TO-220 1. BASE 2. COLLECTOR W (Tamb=25) 3. EMITTER Collector current ICM: -6 A Collector-base voltage V(BR)CBO: TIP42A : -60 V TIP42B: -80 V TIP42C: -100 V Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown voltage 42A 42B 42C Collector-emitter breakdown voltage 42A 42B 42C Emitter-base breakdown voltage Collector cut-off current 42A 42B 42C V(BR)EBO IE= -1mA,IC=0 VCB=- 60V, IE=0 VCB=- 80V, IE=0 VCB=-100V, IE=0 VCE= -30V, IB= 0 ICEO VCE= -30V, IB= 0 VCE= -60V, IB= 0 IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter voltage VCE(sat) VBE(on fT VCE=- 4V, IC= -3A IC=-6A, IB=-0.6A VCE= -4V, IC=-6A VCE=-10V , IC=-0.5A f =1MHz 3 15 VEB=-5 V, IC=0 VCE= -4V, IC= -0.3A 30 V(BR)CEO Ic= -30mA, IB=0 V(BR)CBO Ic= -1mA, IE=0 Symbol 123 unless otherwise specified) Test conditions MIN -60 -80 -100 -60 -80 -100 -5 V V V MAX UNIT ICBO -0.4 mA Collector cut-off current 42A 42B 42C -0.7 mA Emitter cut-off current -1 mA 75 -1.5 -2 V V MHZ Transition frequency |
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