 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SM-8 DUAL PNP MEDIUM POWER HIGH GAIN TRANSISTORS ISSUE 1 - NOVEMBER 1995 ZDT717 C1 C1 C2 C2 PARTMARKING DETAIL T717 B1 E1 B2 E2 SM-8 (8 LEAD SOT223) ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Tj:Tstg VALUE -12 -12 -5 -10 -2.5 -55 to +150 UNIT V V V A A C THERMAL CHARACTERISTICS PARAMETER Total Power Dissipation at Tamb = 25C* Any single die on Both die on equally Derate above 25C* Any single die on Both die on equally Thermal Resistance - Junction to Ambient* Any single die on Both die on equally SYMBOL Ptot VALUE 2 2.5 16 20 62.5 50 UNIT W W mW/ C mW/ C C/ W C/ W * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. 3 - 348 ZDT717 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector Emitter Cutoff Current Collector-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICES VCE(sat) -10 -100 -110 -180 -0.9 -0.8 300 300 180 60 45 80 475 450 275 100 70 110 21 70 130 30 MHz pF ns ns MIN. -12 -12 -5 TYP. -35 -25 -8.5 -100 -100 -100 -17 -140 -170 -220 -1.0 -1.0 MAX. UNIT V V V nA nA nA mV mV mV mV V V CONDITIONS. IC=-100A IC=-10mA* IE=-100A VCB=-10V VEB=-4V VCES=-10V IC=-0.1A, IB=-10mA* IC=-1A, IB=-10mA* IC=-1.5A, IB=-50mA* IC=-2.5A, IB=-50mA* IC=-2.5A, IB=-50mA* IC=-2.5A, VCE=-2V* IC=-10mA, VCE=-2V* IC=-100mA, VCE=-2V* IC=-2.5A, VCE=-2V* IC=-8A, VCE=-2V* IC=-10A, VCE=-2V* IC=-50mA, VCE=-10V f=100MHz VCB=-10V, f=1MHz VCC=-6V, IC=-2A IB1=IB2=50mA Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio VBE(sat) VBE(on) hFE Transition Frequency Output Capacitance Turn-On Time Turn-Off Time fT Cobo ton toff *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 3 - 349 ZDT717 3 - 350 |
Price & Availability of ZDT717
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |