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SM-8 BIPOLAR TRANSISTOR H-BRIDGE
PRELIMINARY DATA SHEET ISSUE B - JULY 1997 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 20V supply * 2.5 Amp continuous rating PARTMARKING DETAIL ZHB6718
ZHB6718
SM-8 (8 LEAD SOT223)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current SYMBOL VCBO VCEO VEBO ICM IC NPNs 20 20 5 6 2.5 PNPs -20 -20 -5 -6 -2.5 UNIT V V V A A C
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
SCHEMATIC DIAGRAM
E1, E4
CONNECTION DIAGRAM
C1,C2
B1 Q1 Q4 C1, C2 C3, C4 B2 Q2 Q3 B3 B4
B1 B2 E2,E3 B3
5
E1,E4 C3,C4 B4
6
7
E2, E3
8
1
2
3
4
ZHB6718
THERMAL CHARACTERISTICS
PARAMETER Total Power Dissipation at Tamb = 25C* Any single transistor on Q1 and Q3 on or Q2 and Q4 on equally Derate above 25C* Any single transistor on Q1 and Q3 on or Q2 and Q4 on equally Thermal Resistance - Junction to Ambient* Any single transistor on Q1 and Q3 on or Q2 and Q4 on equally Rth(j-amb) SYMBOL Ptot VALUE 1.25 2 10 16 100 62.5 UNIT W W mW/ C mW/ C C/ W C/ W
100 80 60 40 20 0 100us
D=1 D=0.5 D=0.2 D=0.1 D=0.05 Single Pulse t1 tP D=t1 tP
60 50 40 30 20 10 0 100us 1ms 10ms 100ms 1s
D=1 D=0.5 D=0.2 D=0.1 D=0.05 Single Pulse t1 tP D=t1 tP
1ms
10ms 100ms
Transient Thermal Resistance Single Transistor "On"
2.0 10
Pulse Width
1s
10s
100s
Transient Thermal Resistance Q1 and Q3 or Q2 and Q4 "On"
Pulse Width
10s
100s
1.5
Two devices on Full Copper
1.0 0.5 0
1
Minimum Copper
Single device on Two devices on Single device on
0
20
40
T - Temperature (C)
60
80
100
120
140 160
0.1
0.1
Derating curve
Pd v PCB Area Comparison
Pcb Area (inches squared)
1
10
* The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. Two devices on is the standard operating condition for the bridge. Eg opposing NPN/PNP pairs turned on.
ZHB6718
NPN TRANSISTORS ELECTRICAL CHARACTERISTICS (at Tamb = 25C ).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage SYMBOL V(BR)CBO V(BR)CEO MIN. 20 20 5 TYP. 100 27 8.3 100 100 100 8 70 130 0.89 0.79 200 300 200 100 400 450 360 180 140 23 170 400 30 MHz pF ns ns 15 150 200 1.0 MAX. UNIT V V V nA nA nA mV mV mV V V CONDITIONS. IC=100A IC=10mA* IE=100A VCB=16V VEB=4V VCES=16V IC=0.1A, IB=10mA* IC=1A, IB=10mA* IC=2.5A, IB=50mA* IC=2.5A, IB=50mA* IC=2.5A, VCE=2V* IC=10mA, VCE=2V* IC=100mA, VCE=2V* IC=2A, VCE=2V* IC=6A, VCE=2V* IC=50mA, VCE=10V f=100MHz VCB=10V, f=1MHz VCC=10V, IC=1A IB1=-IB2=10mA
Emitter-Base Breakdown V(BR)EBO Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance Turn-On Time Turn-Off Time ICBO IEBO ICES VCE(sat)
VBE(sat) VBE(on) hFE
fT Cobo t(on) t(off)
*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%.
ZHB6718
PNP TRANSISTORS ELECTRICAL CHARACTERISTICS (at Tamb = 25C ).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage SYMBOL V(BR)CBO V(BR)CEO MIN. -20 -20 -5 TYP. -65 -55 -8.8 -100 -100 -100 -16 -130 -190 -0.98 0.85 300 300 150 35 150 475 450 230 70 30 180 21 40 670 30 MHz pF ns ns -40 -200 -260 -1.1 MAX. UNIT V V V nA nA nA mV mV mV V V CONDITIONS. IC=-100A IC=-10mA* IE=-100A VCB=-15V VEB=-4V VCES=-15V IC=-100mA, IB=-10mA* IC=-1A, IB=-20mA* IC=-2.5A, IB=-200mA* IC=-2.5A, IB=-200mA* I+=-2.5A, VCE=-2V* IC=-10mA, VCE=-2V* IC=-100mA, VCE=-2V* IC=-2A, VCE=-2V* IC=-4A, VCE=-2V* IC=-6A, VCE=-2V* IC=-50mA, VCE=-10V f=100MHz VCB=-10V, f=1MHz VCC=-10V, IC=-1A IB1=IB2=-20mA
Emitter-Base Breakdown V(BR)EBO Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio ICBO IEBO ICES VCE(sat)
VBE(sat) VBE(on) hFE
Transition Frequency Output Capacitance Turn-On Time Turn-Off Time
fT Cobo t(on) t(off)
*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%.
ZHB6718
NPN TRANSISTOR TYPICAL CHARACTERISTICS
1
+25 C
0.4
I+/I*=50
100m
0.3
100C
0.2 10m
I+/I*=100 I+/I*=50 I+/I*=10
25C -55C
0.1 0.0 1mA 10mA 100mA 1A 10A
1m 1m
10m
100m
1
10
IC - Collector Current (A)
Collector Current
VCE(sat) v IC
1.2 450
25C
VCE(sat) vs IC
1.2 1.0 0.8 0.6 0.4 0.2 0.0
100C
V+-=2V
I+/I*=50
1.0 0.8 0.6
-55C 25C 100C
-55C
225
0.4 0.2
1mA
10mA
100mA
1A
0 10A
0.0 1mA
10mA
100mA
1A
10A
Collector Current
Collector Current
hFE vs IC
VBE(sat) vs IC
1.0 0.8 0.6 0.4 0.2
V+-=2V -55C 25C 100C
0.0 1mA
10mA
100mA
1A
10A
Collector Current
VBE(on) vs IC
PNP TRANSISTOR TYPICAL CHARACTERISTICS
1
+25C
ZHB6718
0.6 0.5
I+/I*=30
100m
0.4 0.3
100C 25C -55C
10m
I+/I*=50 I+/I*=30 I+/I*=10
0.2 0.1 0.0 10 1mA 10mA
1m 1m
10m
100m
1
100mA
1A
10A
IC - Collector Current (A)
Collector Current
VCE(sat) v IC
100C 25C V+-=2V
VCE(sat) vs IC
1.4 1.2 1.0 0.8 0.6 0.4 0.2
1.4 1.2 450 1.0 0.8
I+/I*=10
-55C 25C 100C
-55C
225
0.6 0.4 0.2
0.0 1mA
10mA
100mA
1A
0 10A
0.0 1mA
10mA
100mA
1A
10A
Collector Current
Collector Current
hFE vs IC
1.2 1.0 0.8 0.6 0.4 0.2 0.0 1mA 10mA 100mA 1A 10A
-55C 25C 100C
VBE(sat) vs IC
V+-=2V
Collector Current
VBE(on) vs IC
ZHB6718
SAFE OPERATING AREA
10 10
1
1
100m
DC 1s 100ms 10ms 1ms 100s
100m
DC 1s 100ms 10ms 1ms 100s
10m 100m
Safe Operating Area (Full Copper)
see note below
VCE - Collector Emitter Voltage (V)
1
10
100
10m 100m
Safe Operating Area (Minimum Copper)
see note below
VCE - Collector Emitter Voltage (V)
1
10
100
Note: The Safe Operating Area (SOA) charts shown are a combination of the worst case secondary breakdown characteristics for the NPN/PNP pair, and the thermal curves demonstrating the power dissipation capability of the energised ZHB part (opposing NPN-PNP switched on) when mounted on a 50mm x 50mm FR4 PCB. The two cases show: i) full copper present and ii) with minimal copper present - this being defined as an SM-8 footprint with 1.5mm tracks to the edge of the PCB. For example, on a 50mm x 50mm full copper PCB, the ZHB6718 will safely dissipate 2W under DC conditions, taking note of continuous current ratings and voltage limits. Higher powers can be tolerated for pulsed operation, while the shorter pulse widths (100s and 1ms) being relevant for assessment of switching conditions. The ZHB6718 H-Bridge can be modelled within SPICE using the following transistor models configured in the standard H-Bridge topology, as shown in the schematic diagram of this datasheet.
*ZETEX H Bridge NPN transistors Spice model Last revision 4/7/97 .MODEL H6718N NPN IS =5.611E-13 NF =1.0022 BF =480 IKF=4.6 VAF=51 + ISE=1.73E-13 NE =1.4 NR =1.0002 BR =200 IKR=3 VAR=25 + ISC=7.3152E-13 NC =1.47 RB =0.032 RE =0.027 RC =0.025 + CJC=59E-12 MJC=0.2651 VJC=0.3051 CJE=216E-12 + TF =0.95E-9 TR =2.25E-9 * * *ZETEX H Bridge PNP transistors Spice model Last revision 4/7/97 .MODEL H6718P PNP IS =6.8E-13 BF =480 IKF =2 VAF =23 + ISE=0.8E-13 NE =1.5567 NR =1.00 BR =70 IKR=0.4 + VAR=7 ISC=7.5E-14 NC =1.19 RB =0.085 RE =0.04 + RC =0.045 CJC=70.02E-12 MJC=0.4685 VJC=0.7714 + CJE=203.6E-12 MJE=0.5029 VJE=0.9403 TF =0.71E-9 +TR =23.7E-9 * (C) 1997 ZETEX PLC The copyright in these models and the design embodied belong to Zetex PLC (Zetex). They are supplied free of charge by Zetex for the purpose of research and design and may be used or copied intact (including this notice) for that purpose only. All other rights are reserved. The models are believed accurate but no condition or warranty as to their merchantability or fitness for purpose is given and no liability in respect of any use is accepted by Zetex PLC, its distributors or agents. Zetex PLC, Fields New Road, Chadderton, Oldham OL9 8NP, UK.
ZHB6718
He E A A1
5
6
b
3
4
e2
7
o
8
45
1
2
e1 c
D
Lp
3
Dim A A1 b c D E e1 e2 He Lp

Millimetres Min 0.02 0.24 6.3 3.3 6.7 0.9 Typ 0.7 4.59 1.53 10 Max 1.7 0.1 0.32 6.7 3.7 7.3 15 Min 0.0008 0.009 0.248 0.130 0.264 0.035
Inches Typ 0.028 0.180 0.060 10 Max 0.067 0.004 0.013 0.264 0.145 0.287 15
Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420 Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc. 47 Mall Drive, Unit 4 Commack NY 11725 USA Telephone: (516) 543-7100 Fax: (516) 864-7630 Zetex (Asia) Ltd. 3510 Metroplaza, Tower 2 Hing Fong Road, Kwai Fong, Hong Kong Telephone:(852) 26100 611 Fax: (852) 24250 494 These are supported by agents and distributors in major countries world-wide (c)Zetex plc 1997 Internet: http://www.zetex.com
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.

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