SOT323 NPN SILICON PLANAR VHF/UHF TRANSISTORS
ISSUE 1 - DECEMBER 1998 PARTMARKING DETAIL - T11
ZUMTQ31A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Base Current Power Dissipation at T amb=25C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO IC IB P tot T j:T stg VALUE 30 15 3 100 50 330 -55 to +150 UNIT V V V mA mA mW C
ELECTRICAL CHARACTERISTICS (at Tamb = 25C).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio Transition Frequency Collector-Base Capacitance Input Capacitance Noise Figure SYMBOL V (BR)CBO V (BR)CEO V (BR)EBO I CBO V CE(sat) V BE(sat) h FE fT C obo C ibo N 100 600 1.7 2.0 6.0 MHz pF pF dB MIN. 30 15 3 0.01 0.4 1.0 MAX. UNIT V V V A V V CONDITIONS. I C=1.0A, I E =0 I C=3mA, I B=0* I E=10A, I C=0 V CB=15V, I E=0 I C=10mA, I B=1mA I C=10mA, I B=1mA I C=3mA, V CE=1V I C=4mA, V CE=10V f=100MHz V CB=10V, f=1MHz V CB=0.5V, f=1MHz I C=1mA, V CE=6V R s=400, f=60MHz
*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for this device
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