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| ZXMN2A02X8 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 20V; RDS(ON) = 0.02 DESCRIPTION ID = 7.8A This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES * Low on-resistance * Fast switching speed * Low threshold * Low gate drive * Low profile SOIC package APPLICATIONS * DC - DC Converters * Power Management Functions * Disconnect switches * Motor control ORDERING INFORMATION DEVICE ZXMN2A02X8TA ZXMN2A02X8TC REEL SIZE 7" 13" TAPE WIDTH 12mm 12mm QUANTITY PER REEL 1000 units 4000 units PINOUT DEVICE MARKING * ZXMN 2A02 Top View ISSUE 2 - JANUARY 2005 1 ZXMN2A02X8 ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Gate Source Voltage Continuous Drain Current V GS =10V; T A =25C (b) V GS =10V; T A =70C (b) V GS =10V; T A =25C (a) Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode) (c) Power Dissipation at T A =25C (a) Linear Derating Factor Power Dissipation at T A =25C (b) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V DSS V GS ID LIMIT 20 20 7.8 6.3 6.2 39 3.1 39 1.1 8.8 1.67 13.4 -55 to +150 UNIT V V A I DM IS I SM PD PD T j :T stg A A A W mW/C W mW/C C THERMAL RESISTANCE PARAMETER Junction to Ambient (a) Junction to Ambient (b) SYMBOL R JA R JA VALUE 113 74.5 UNIT C/W C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 10 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10 s - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. Refer to transient thermal impedance graph. ISSUE 2 - JANUARY 2005 2 ZXMN2A02X8 CHARACTERISTICS 1.2 ID Drain Current (A) RDS(on) 10 Limited Max Power Dissipation (W) 1.0 0.8 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120 140 160 1 DC 1s 100ms 10ms Single Pulse Tamb=25C 1ms 100s 100m 10m 100m VDS Drain-Source Voltage (V) 1 10 Temperature (C) Safe Operating Area 120 110 Tamb=25C 100 90 80 70 D=0.5 60 50 40 30 D=0.2 20 10 0 100 1m 10m 100m Derating Curve Thermal Resistance (C/W) MaximumPower (W) 100 Single Pulse Tamb=25C Single Pulse D=0.05 D=0.1 10 1 10 100 1k 1 100 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Width (s) Transient Thermal Impedance Pulse Power Dissipation ISSUE 2 - JANUARY 2005 3 ZXMN2A02X8 ELECTRICAL CHARACTERISTICS (at TA = 25C unless otherwise stated). PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage V (BR)DSS I DSS I GSS V GS(th) 0.7 0.02 0.04 27 20 1 100 V A nA V S I D =250A, V GS =0V V DS =20V, V GS =0V V GS = 12V, V DS =0V I =250A, V DS = V GS D V GS =4.5V, V GS =2.5V, I D =11A I D =8.4A SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Static Drain-Source On-State Resistance R DS(on) (1) Forward Transconductance (1)(3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge (3) V SD t rr Q rr 0.85 16.3 7.8 t d(on) tr t d(off) tf Qg Q gs Q gd 7.9 10 33.3 13.6 18.6 5.2 4.9 C iss C oss C rss 1900 356 218 g fs V DS =10V,I D =11A pF pF pF V DS =10 V, V GS =0V, f=1MHz ns ns ns ns nC nC nC V DS =10V,V GS =4.5V, I D =11A V DD =10V, I D =1A R G =6.0, V GS =4.5V 0.95 V ns nC T J =25C, I S =11.5A, V GS =0V T J =25C, I F =2.1A, di/dt= 100A/s NOTES (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 2 - JANUARY 2005 4 ZXMN2A02X8 TYPICAL CHARACTERISTICS T = 25C 7V T = 150C 2.5V 7V 2.5V 2V 1.5V ID Drain Current (A) 10 2V VGS 1 1.5V ID Drain Current (A) 10 1 VGS 1V 0.1 0.1 0.1 0.1 1 10 VDS Drain-Source Voltage (V) 1 10 VDS Drain-Source Voltage (V) Output Characteristics 1.6 Normalised RDS(on) and VGS(th) Output Characteristics VGS = 4.5V ID = 11A RDS(on) 10 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 0 ID Drain Current (A) T = 150C T = 25C 1 VGS(th) VGS = VDS ID = 250uA VDS = 10V 0.1 1 2 50 100 150 VGS Gate-Source Voltage (V) Tj Junction Temperature (C) Typical Transfer Characteristics RDS(on) Drain-Source On-Resistance () 1.5V T = 25C VGS Normalised Curves v Temperature ISD Reverse Drain Current (A) 10 1 0.1 0.01 1 10 T = 150C 10 2V T = 25C 2.5V 4V 7V 1 0.1 0.2 On-Resistance v Drain Current ID Drain Current (A) VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage 0.4 0.6 0.8 1.0 1.2 ISSUE 2 - JANUARY 2005 5 ZXMN2A02X8 TYPICAL CHARACTERISTICS 3000 C Capacitance (pF) 2500 2000 1500 1000 500 0 0.1 1 CISS COSS CRSS VGS Gate-Source Voltage (V) VGS = 0V f = 1MHz 10 4.5 4.0 ID = 11A 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 5 VDS = 10V 10 15 20 VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage Q - Charge (nC) Gate-Source Voltage v Gate Charge ISSUE 2 - JANUARY 2005 6 ZXMN2A02X8 PACKAGE OUTLINE PAD LAYOUT PACKAGE DIMENSIONS DIM A A1 B C D 0.05 0.25 0.13 2.90 Millimetres MIN MAX 1.10 0.15 0.40 0.23 3.10 0.002 0.010 0.005 0.114 Inches MIN MAX 0.043 0.006 0.016 0.009 0.122 DIM e E H L Millimetres MIN MAX Inches MIN MAX 0.65 BSC 2.90 3.10 0.0256 BSC 0.114 0.122 4.90 BSC 0.40 0 0.70 6 0.193 BSC 0.016 0 0.028 6 (c) Zetex Semiconductors plc 2005 Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 2 - JANUARY 2005 7 |
Price & Availability of ZXMN2A02X805
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