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| ZXTN25020BFH 20V, SOT23, NPN medium power transistor Summary BVCEX > 50V BVCEO > 20V BVECO > 3V IC(cont) = 4.5A VCE(sat) < 45 mV @ 1A RCE(sat) = 27 m PD = 1.25W Complementary part number ZXTP25020BFH Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. C B Features * * * * * High power dissipation SOT23 package High peak current Low saturation voltage 50V forward blocking voltage 3V reverse blocking voltage E E Applications * * * MOSFET gate drivers Motor control DC-DC converters C B Pinout - top view Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3,000 Ordering information Device ZXTN25020BFHTA Device marking 1B1 Issue 1 - May 2006 (c) Zetex Semiconductors plc 2006 1 www.zetex.com ZXTN25020BFH Absolute maximum ratings Parameter Collector-base voltage Collector-emitter voltage (forward blocking) Collector-emitter voltage Emitter-collector voltage (reverse blocking) Emitter-base voltage Continuous collector current(c) Base current Peak pulse current Power dissipation at Tamb =25C(a) Linear derating factor Power dissipation at Tamb =25C(b) Linear derating factor Power dissipation at Tamb =25C(c) Linear derating factor Power dissipation at Tamb =25C(d) Linear derating factor Operating and storage temperature range Tj, Tstg PD PD PD Symbol VCBO VCEX VCEO VECO VEBO IC IB ICM PD Limit 50 50 20 3 7 4.5 1 10 0.73 5.84 1.05 8.4 1.25 9.6 1.81 14.5 - 55 to 150 Unit V V V V V A A A W mW/C W mW/C W mW/C W mW/C C Thermal graphs Parameter Junction to ambient(a) Junction to ambient(b) Junction to ambient(c) Junction to ambient(d) Symbol R JA R JA R JA R JA Limit 171 119 100 69 Unit C/W C/W C/W C/W NOTES: (a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (d) As (c) above measured at t<5secs. Issue 1 - May 2006 (c) Zetex Semiconductors plc 2006 2 www.zetex.com ZXTN25020BFH Characteristics Issue 1 - May 2006 (c) Zetex Semiconductors plc 2006 3 www.zetex.com ZXTN25020BFH Electrical characteristics (at Tamb = 25C unless otherwise stated) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage (forward blocking) Collector-emitter breakdown voltage (base open) Emitter-base breakdown voltage Emitter-collector breakdown voltage (reverse blocking) Emitter-collector breakdown voltage (base open) Collector-base cut-off current Symbol BVCBO BVCEX BVCEO BVEBO BVECX BVECO ICBO Min. 50 50 20 7 6 3 Typ. 90 90 27 8 7 4.7 <1 <1 35 55 90 175 120 Base-emitter saturation voltage Base-emitter turn-on voltage Static forward current transfer ratio VBE(sat) VBE(on) hFE 100 100 75 30 Transition frequency Output capacitance Delay time Rise time Storage time Fall time fT COBO td tr ts tf 910 825 200 210 160 70 185 22.7 87 119 146 61 300 s; duty cycle 2%. Max. Unit Conditions V IC = 100 A IC = 100 A, RBE < 1k -1V < VBE < 0.25V V V V V IC = 10mA (*) IE = 100 A IE = 100 A, RBC < 1k or 0.25V > VBC > -0.25V IE = 100 A, VCB = 40V VCB = 40V, Tamb= 100C VCE = 40V; RBE < 1k -1V < VBE < 0.25V VEB = 5.6V or or 50 20 100 50 45 80 115 240 145 1000 900 300 nA A nA nA Collector-emitter cut-off current ICEX Emitter-base cut-off current Collector-emitter saturation voltage IEBO VCE(sat) mV I = 1A, I = 100mA(*) C B mV I = 1A, I = 20mA(*) C B mV I = 2A, I = 40mA(*) C B mV I = 4.5A, I = 90mA(*) C B mV I = 4.5A, I = 450mA(*) C B mV I = 4.5A, I = 90mA(*) C B mV I = 4.5A, V = 2V(*) C CE IC = 10mA, VCE = 2V(*) IC = 1A, VCE = 2V(*) IC = 4.5A, VCE = 2V(*) IC = 10A, VCE = 2V(*) MHz IC = 50mA, VCE = 10V f = 100MHz 30 pF ns ns ns ns VCB = 10V, f = 1MHz(*) VCC = 10V. IC = 1A, IB1 = IB2= 10mA. NOTES: (*) Measured under pulsed conditions. Pulse width Issue 1 - May 2006 (c) Zetex Semiconductors plc 2006 4 www.zetex.com ZXTN25020BFH Typical characteristics Issue 1 - May 2006 (c) Zetex Semiconductors plc 2006 5 www.zetex.com ZXTN25020BFH Package outline - SOT23 L H N D 3 leads G M B A C K F Dim. A B C D F G Millimeters Min. 2.67 1.20 0.37 0.085 Max. 3.05 1.40 1.10 0.53 0.15 Inches Min. 0.105 0.047 0.015 0.0034 Max. 0.120 0.055 0.043 0.021 0.0059 Dim. H K L M N - Millimeters Min. 0.33 0.01 2.10 0.45 Max. 0.51 0.10 2.50 0.64 - Inches Max. 0.013 0.0004 0.083 0.018 Max. 0.020 0.004 0.0985 0.025 - 0.95 NOM 0.0375 NOM 1.90 NOM 0.075 NOM Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Issue 1 - May 2006 (c) Zetex Semiconductors plc 2006 6 www.zetex.com |
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