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| ZXTP23015CFH 15V, SOT23, PNP medium power transistor Summary V(BR)CES > -15V, V(BR)CEO > -15V V(BR)ECO > -6V IC(CONT) = -6A RCE(SAT) = 20m PD = 1.25W Complementary part number ZXTN23015CFH typical VCE(SAT) < -36mV @ -1A Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. Feature * * * * * Higher power dissipation SOT23 package High peak current Low saturation voltage 15V forward blocking voltage 6V reverse blocking voltage Applications * * * * * High side disconnect switches DC - DC converters MOSFET and IGBT gate driving Motor drive Relay, lamp, and solenoid drive E C B Pinout - top view Ordering information Device ZXTP23015CFHTA Reel size (inches) 7 Tape width 8mm Quantity per reel 3000 Device marking 317 Issue 1 - February 2006 (c) Zetex Semiconductors plc 2006 1 www.zetex.com ZXTP23015CFH Absolute maximum ratings Parameter Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Emitter-collector voltage Peak pulse current Continuous collector current(c) Continuous collector current(d) Base current Power dissipation @ TA=25oC(a) Linear derating factor(a) Power dissipation @ TA=25oC(b) Linear derating factor(b) PD Power dissipation @ TA=25oC(c) Linear derating factor(c) Power dissipation @ TA=25oC(d) Linear derating factor(d) Operating and storage temperature Tj:Tstg PD PD Symbol VCBO V(BR)CES VCEO VEBO VECO ICM IC IC IB PD Limit -15 -15 -15 -7.0 -6.0 -10 -5 -6 -1.2 0.73 5.84 1.05 8.4 1.25 9.6 1.81 14.5 -55 to +150 Unit V V V V V A A A A W mW/oC W mW/oC W mW/oC W mW/oC o C Thermal resistance Parameter Junction to ambient(a) Junction to ambient(b) Junction to ambient(c) Junction to ambient(d) Symbol R JA R JA R JA R JA Value 171 119 100 69 Unit o o o o C/W C/W C/W C/W NOTES: (a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (d) As (c) above measured at t<5secs. Issue 1 - February 2006 (c) Zetex Semiconductors plc 2006 2 www.zetex.com ZXTP23015CFH Characteristics Issue 1 - February 2006 (c) Zetex Semiconductors plc 2006 3 www.zetex.com ZXTP23015CFH ELECTRICAL CHARACTERISTICS (at TAMB = 25C unless otherwise stated) Parameter Symbol Min. -15 -15 -15 -7.0 -6.0 Typ. -40 -40 -25 -8.2 -8.5 -20 -20 -10 200 200 140 Collector-emitter saturation voltage VCE(sat) 380 350 220 -6 -27 -90 -140 Base-emitter saturation voltage VBE(sat) -10 -36 -120 -190 mV mV mV mV V V V 560 Max. Unit Conditions V V V V V nA nA nA IC=-100 A IC =-100 A IC=-10mA(*) IE=-100 A IE=-100 A VCE=-12V VCB=-12V VEB=-6V IC=-10mA, VCE=-2V (*) IC=-500mA, VCE=-2V Ic=-6A, VCE=-2V IC=-100mA, IB=-10mA(*) IC=-1A, IB=-100mA(*) IC=-3A, IB=-60mA(*) IC=-6A, IB=-240mA(*) IC=-3A, IB=-60mA(*) IC=-6A, IB=-240mA(*) IC=-6A, VCE=-2V(*) Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Emitter-collector breakdown voltage Collector-emitter cut-off current Collector-base cut-off current Emitter-base cut-off current Static forward current transfer ratio V(BR)CES V(BR)CEO V(BR)EBO V(BR)ECO ICES ICBO IEBO HFE -0.83 -0.93 -0.93 -1.03 Base-emitter turn-on voltage Transition frequency Output capacitance Delay time Rise time Storage time Fall time VBE(on) fT Cobo t (d) t (r) t (stg) t (f) -0.83 -0.93 270 78.4 14 35 138 17.4 MHz Ic=-500mA, VCE=-2V, f=50MHz pF ns ns ns ns VCB=-10V, f=1MHz VCC=-5V, IC=-3A, IB1=IB2=-150mA NOTES: (*) Measured under pulsed conditions. Pulse width = 300 S. Duty cycle 2%. Issue 1 - February 2006 (c) Zetex Semiconductors plc 2006 4 www.zetex.com ZXTP23015CFH Typical characteristics Issue 1 - February 2006 (c) Zetex Semiconductors plc 2006 5 www.zetex.com ZXTP23015CFH Package outline - SOT23 L H N D 3 leads G M B A C K F Dim. A B C D F G Millimeters Min. 2.67 1.20 0.37 0.085 Max. 3.05 1.40 1.10 0.53 0.15 Inches Min. 0.105 0.047 0.015 0.0034 Max. 0.120 0.055 0.043 0.021 0.0059 Dim. H K L M N - Millimeters Min. 0.33 0.01 2.10 0.45 Max. 0.51 0.10 2.50 0.64 - Inches Max. 0.013 0.0004 0.083 0.018 Max. 0.020 0.004 0.0985 0.025 - 0.95 NOM 0.0375 NOM 1.90 NOM 0.075 NOM Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Issue 1 - February 2006 (c) Zetex Semiconductors plc 2006 6 www.zetex.com |
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