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Ordering number : ENA0361A
2SK2617ALS
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
2SK2617ALS
Features
* * *
General-Purpose Switching Device Applications
Low ON-resistance. Low Qg. Ultrahigh-speed switching.
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *3 Avalanche Current *4 Symbol VDSS VGSS IDc*1 IDpack*2 IDP PD Tch Tstg EAS IAV Limited only by maximum temperature SANYO's ideal heat dissipation condition PW10s, duty cycle1% Tc=25C (SANYO's ideal heat dissipation condition) Conditions Ratings 500 30 5 4.5 16 2.0 25 150 --55 to +150 88 4 Unit V V A A A W W C C mJ A
*1 Shows chip capability *2 Package limited *3 VDD=50V, L=10mH, IAV=4A *4 L10mH, single pulse Marking : K2617
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22107 TI IM TC-00000527 / 72006QB MS IM TC-00000026 No. A0361-1/4
2SK2617ALS
Electrical Characteristics at Ta=25C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on) Ciss Coss Crss Qg td(on) tr td(off) tf VSD Conditions ID=1mA, VGS=0V VDS=500V, VGS=0V VGS=30V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=2A ID=2A, VGS=15V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=200V, ID=4A, VGS=10V See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. IS=4A, VGS=0V Ratings min 500 1.0 100 3.5 1.1 2.2 1.2 550 190 95 15 15 15 45 25 0.95 1.2 1.6 5.5 typ max Unit V
mA nA
V S pF pF pF nC ns ns ns ns V
Package Dimensions
unit : mm (typ) 7509-002
Switching Time Test Circuit
VDD=200V
10.0 3.2 4.5 2.8
VGS=15V PW=1s D.C.0.5%
7.2
D
ID=2A RL=100 VOUT
3.5
16.1
16.0
G
0.6
0.9 1.2 0.75
3.6
1.2
P.G
RGS 50
S
2SK2617ALS
14.0
0.7
123
2.4
1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI(LS)
2.55
2.55
Avalanche Resistance Test Circuit
L 50 RG
2SK2617ALS 15V 0V 50 VDD
No. A0361-2/4
2SK2617ALS
7
ID -- VDS
Tc=25C
10V 15V 8V
Drain Current, ID -- A
8 7 6 5
ID -- VGS
VDS=10V
Tc= --25C
6
Drain Current, ID -- A
5
25C
4
75C
4 3 2 1 0
3
2
7V
1
VGS=6V
0 0 2 4 6 8 10 IT05191
0
5
10
15
20 IT05192
Drain-to-Source Voltage, VDS -- V
4.0
RDS(on) -- VGS
Drain-to-Source Voltage, VDS -- V
3.4
RDS(on) -- Tc
Tc=25C
Static-Drain-to-Source On-State Resistance, RDS(on) -- m
Static-Drain-to-Source On-State Resistance, RDS(on) -- m
3.1 2.8 2.5 2.2 1.9 1.6 1.3 1.0 0.7 0.4 0.1 --50 --25 0 25 50 75 100 125 IT05194
3.5
3.0
2.5
2.0
1.5
2A
ID=4A 1A
0V =1 GS V V 15 A, =2 S= ID VG A, =2 ID
1.0 0.5 0 2 4 6 8 10 12 14 16
18
20
Gate-to-Source Voltage, VGS -- V
10
IT05193 100 7 5 3 2
Case Temperature, Tc -- C
yfs -- ID
VDS=10V
IS -- VSD
VGS=0V
Forward Transfer Admittance, yfs -- S
7 5 3 2
1.0 7 5 3 2 0.1 0.1
5C --2 5C Tc= 2 C 75
Source Current, IS -- A
10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2
0.01 7 5 3 2 0.001 2 3 5 7 1.0 2 3 5
Drain Current, ID -- A
100
7 10 IT05195 3 2 10 7 5
0
0.3
Tc= 75
C 25 C --25 C
0.6
0.9
1.2
1.5 IT05196
SW Time -- ID
Diode Forward Voltage, VSD -- V
ASO
7
VDD=200V VGS=15V
Drain Current, ID -- A
td (off)
IDP=16A IDc(*1)=5A IDpack(*2)=4.5A
1m
m DC 100 s ms op era tio n 10
Switching Time, SW Time -- ns
5
PW10s 10 s 10 0 s
3 2 1.0 7 5 3 2 0.1 7 5 3 2
s
3
tf
tr
2
Operation in this area is limited by RDS(on).
10 7 7 1.0 2
td(on)
3
5
7 IT05197
0.01 1.0
Tc=25C Single pulse
2 3 5
*1. Shows chip capability *2. SANYO's ideal heat dissipation condition
7 10 2 3 5 7 100 2 3 5 7 IT10849
Drain Current, ID -- A
Drain-to-Source Voltage, VDS -- V
No. A0361-3/4
2SK2617ALS
2.5
PD -- Ta
Allowable Power Dissipation, PD -- W
35
PD -- Tc
Allowable Power Dissipation, PD -- W
30
2.0
25
1.5
20
1.0
15
10
0.5
5 0
0 0 20 40 60 80 100 120 140 160
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- C
120
IT05199
Case Temperature, Tc -- C
IT05120
EAS -- Ta
Avalanche Energy derating factor -- %
100
80
60
40
20
0 0 25 50 75 100 125 150 175 IT10478
Ambient Temperature, Ta -- C
Note on usage : Since the 2SK2617ALS is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.
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This catalog provides information as of February, 2007. Specifications and information herein are subject to change without notice.
PS No. A0361-4/4

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