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PHOTODIODE
Si APD
S4402
1 mm quadrant APD
Features
Quadrant format on one chip with 1 mm active area ensures uniform characteristics between elements. l Single power supply operation Allows easy and simple operation.
Applications
l Uniform element characteristics
l Low-light-level detection l Laser beam positioning
s General ratings
Parameter Window material Active area size Effective active area Symbol A Value Borosilicate glass 1 mm/4 0.17 (per 1 element) Unit mm mm2
s Absolute maximum ratings
Parameter Operating temperature Storage temperature Symbol Topr Tstg Value -20 to +60 -55 to +100 Unit C C
s Electrical and optical characteristics (Ta=25 C)
Parameter Spectral response range Peak sensitivity wavelength Photo sensitivity Quantum efficiency Breakdown voltage Temperature coefficient of VBR Dark current Cut-off frequency Terminal capacitance Excess noise figure Symbol p S QE VBR ID fc Ct x Condition M=100 =800 nm, M=1 =800 nm, M=1 IR=100 A M=100 M=100, =800 nm RL=50 , -3 dB M=100, f=1 MHz M=50, f=10 kHz Io=10 nA Min. Typ. 400 to 1000 800 0.5 75 150 0.65 0.4 310 8 0.35 Max. 200 2.0 Unit nm nm A/W % V V/C nA MHz pF -
1
Si APD
s Spectral response
0.7 0.6 (Typ. Ta=25 C)
S4402
s Dark current vs. reverse voltage
100 nA (Typ. Ta=25 C)
PHOTO SENSITIVITY (A/W)
0.4 0.3 0.2 0.1 0 200
DARK CURRENT
400 600 800 1000
0.5
10 nA
1 nA
100 pA
10 pA
0
50
100
150
200
WAVELENGTH (nm)
KAPDB0046EA
REVERSE VOLTAGE (V)
KAPDB0047EA
s Terminal capacitance vs. reverse voltage
1 nF (Typ. Ta=25 C, f=1 MHz)
s Gain vs. reverse voltage
103 (Typ. Ta=25 C)
TERMINAL CAPACITANCE
102
100 pF
GAIN
10 pF 1 pF -2 10
-1 0 1 2 3
101
100
10
10
10
10
10
10-1
0
50
100
150
200
REVERSE VOLTAGE (V)
KAPDB0048EA
REVERSE VOLTAGE (V)
KAPDB0049EA
s Cross-talk example
100 (Ta=25 C, =800 nm, M=100)
s Dimensional outline (unit: mm)
WINDOW 3.0 MIN. 9.2 0.2 8.2 0.1
RELATIVE SENSITIVITY (%)
4.6 0.2
1.3
10
PHOTOSENSITIVE SURFACE
13
STAND OFF
0.8
1
0.45 LEAD
0.07 1 DETAILS OF ACTIVE AREA (DESIGN DIMENSION)
5.8
0.1
3.5
0
200
400
600
800
1000
1200
POSITION (m)
KAPDB0050EA
CASE GND
0.07
KAPDA0021EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2005 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
2
Cat. No. KAPD1002E02 Mar. 2005 DN

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