 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM5359-4UL TECHNICAL DATA FEATURES HIGH POWER P1dB=36.5dBm at 5.3GHz to 5.9GHz HIGH GAIN G1dB=10.5dB at 5.3GHz to 5.9GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise IDS2 Tch IDS1 G G1dB SYMBOL P1dB ( Ta= 25C ) UNIT dBm dB A dB % MIN. 35.5 9.5 -44 TYP. MAX. 36.5 10.5 1.1 37 -47 1.1 1.3 0.6 1.3 80 CONDITIONS VDS= 10V f = 5.3 to 5.9GHz add IM3 Two-Tone Test Po= 25.5dBm (Single Carrier Level) (VDS X IDS +Pin- P1dB) X Rth(c-c) dBc A C Recommended gate resistance(Rg) : Rg= 150 (MAX.) ELECTRICAL CHARACTERISTICS CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL ( Ta= 25C ) UNIT mS V A V C/W MIN. -1.0 -5 TYP. MAX. 900 -2.5 2.6 4.5 -4.0 6.0 gm VGSoff IDSS VGSO CONDITIONS VDS= 3V IDS= 1.5A VDS= 3V IDS= 15mA VDS= 3V VGS= 0V IGS= -50A Rth(c-c) Channel to Case The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. Jun. 2006 TIM5359-4UL ABSOLUTE MAXIMUM RATINGS CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 C ) Channel Temperature Storage ( Ta= 25C ) SYMBOL VDS VGS IDS PT Tch Tstg UNIT V V A W C C RATING 15 -5 3.5 25 175 -65 to +175 PACKAGE OUTLINE (2-11D1B) Unit in mm (1) Gate (2) Source (3) Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260C. 2 TIM5359-4UL RF PERFORMANCE Output Power (Pout) vs. Frequency VDS=10V IDS1.1A Pin=26.0dBm Pout(dBm) 37 36 35 34 5.3 5.4 5.5 5.6 5.7 5.8 5.9 Frequency (GHz) Output Power(Pout) vs. Input Power(Pin) 39 freq.=5.9GHz 38 37 36 VDS=10V IDS1.1A Pout 80 70 60 50 40 30 20 10 20 22 24 26 28 30 Pout (dBm) 35 34 33 32 31 30 add Pin (dBm) 3 add(%) TIM5359-4UL Power Dissipation vs. Case Temperature 30 20 PT (W) 10 0 0 40 80 Tc () 120 160 200 IM3 vs. Output Power Characteristics -20 VDS= 10V IDS 1.1A f= 5.9GHz f= 5MHz -30 IM3 (dBc) -40 -50 -60 21 23 25 27 29 31 Po(dBm), Single Carrier Level 4 |
Price & Availability of TIM5359-4UL
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |