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| Transys Electronics LIMITED TO-220 Plastic-Encapsulated Transistors 2SD2137 FEATURES Power dissipation PCM: 2 W (Tamb=25) TRANSISTOR (NPN) TO-220 1. BASE 2. COLLECTOR 3. EMITTER Collector current 3 A ICM: Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter voltage Transition frequency Turn-on time Switch time Storage time Fall time VCE(sat) VBE VCE=4V, IC=3A IC=3A, IB=375mA VCE=4V, IC=3A VCE=5V, IC=0.2A, f=10MHz 123 unless otherwise specified) Test conditions MIN TYP MAX UNIT V V V Ic=1mA, IE=0 Ic=30mA, IB=0 IE=1mA, IC=0 VCB=60V, IE=0 VEB=6V, IC=0 VCE=4V, IC=1A 60 60 6 100 100 70 10 1.2 1.8 30 0.3 A A 320 V V MHz s s s fT ton tstg tf VCC=50V, IC=1A, IB1=0.1A, IB2=-0.1A 2.5 0.2 CLASSIFICATION OF hFE(1) Rank Range Q 70-150 P 120-250 O 160-320 |
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