 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 2SK2879-01 N-CHANNEL SILICON POWER MOSFET FUJI POWER MOSFET Outline Drawings TO-3P FAP-2S Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Max. power dissipation Operating and storage temperature range Symbol VDS ID ID(puls] VGS IAR *2 EAS *1 PD Tch Tstg Ratings 500 20 80 30 20 761 150 +150 -55 to +150 Unit V A A V A mJ W C C < *2 Tch=150C Equivalent circuit schematic Drain(D) Gate(G) Source(S) *1 L=3.49mH, Vcc=50V Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV VSD trr Qrr Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=500V VGS=0V VGS=30V VDS=0V ID=10A VGS=10V ID=10A VDS=25V VDS=25V VGS=0V f=1MHz VCC=300V ID=20A VGS=10V RGS=10 L=3.49 mH Tch=25C IF=2xIDR VGS=0V Tch=25C IF=IDR VGS=0V -di/dt=100A/s Tch=25C Tch=25C Tch=125C Min. 500 2.5 Typ. Max. Units V V A mA nA S pF 3.0 3.5 10 500 0.2 1.0 10 100 0.33 0.38 7.5 15.0 2200 3300 330 500 140 210 20 30 130 200 160 240 105 160 20 1.1 1.65 650 10.0 ns A V ns C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 0.83 35.0 Units C/W C/W 1 2SK2879-01 Characteristics Power Dissipation PD=f(Tc) FUJI POWER MOSFET Safe operating area ID=f(VDS):D=0.01,Tc=25C 10 2 160 140 DC 120 100 10 1 t=1s 10s 100s 1ms PD [W] 80 60 40 20 0 ID [A] 10 0 10ms 100ms 10 -1 t D= T t T 0 50 100 150 10 -2 10 0 10 1 10 2 10 3 Tc [ C] o VDS [V] Typical output characteristics ID=f(VDS):80s Pulse test,Tch=25C 50 Typical transfer characteristic ID=f(VGS):80s Pulse test,VDS=25V,Tch=25C 10 2 40 VGS=20V 10V 8V 6V 10 1 30 ID [A] 5.5V 20 5V ID [A] 10 0 10 10 4.5V -1 0 0 5 10 15 20 25 30 35 10 -2 0 1 2 3 4 5 6 7 8 9 10 VDS [V] VGS [V] Typical forward transconductance gfs=f(ID):80s Pulse test,VDS=25V,Tch=25C 10 2 Typical drain-source on-state resistance RDS(on)=f(ID):80s Pulse test, Tch=25C 3 VGS= 4.5V 5V 5.5V 6V 10 1 2 10 0 RDS(on) [ ] 1 gfs [s] 10 -1 8V 10V 20V 10 -2 0 10 -2 10 -1 10 0 10 1 10 2 0 5 10 15 20 25 30 35 40 45 50 ID [A] ID [A] 2 2SK2879-01 FUJI POWER MOSFET 1.2 Drain-source on-state resistance RDS(on)=f(Tch):ID=10A,VGS=10V 6.0 Gate threshold voltage VGS(th)=f(Tch):ID=1mA,VDS=VGS 1.0 5.0 0.8 4.0 RDS(on) [ ] VGS(th) [V] max. 0.6 max. 3.0 typ. min. 2.0 0.4 typ. 0.2 1.0 0.0 -50 0 50 100 150 o 0.0 -50 0 50 100 o 150 Tch [ C] Tch [ C] Typical gate charge characteristic VGS=f(Qg):ID=20A,Tch=25C 500 450 Vcc=400V 400 350 Vcc=100V 250V 40 35 1n 30 400V 25 20 15 100V 100 50 0 10 5 0 300 10p 100p 50 45 10n Typical capacitances C=f(VDS):VGS=0V,f=1MHz Ciss VDS [V] 300 250V 250 200 150 VGS [V] C [F] Coss Crss 0 50 100 150 200 250 10 -2 10 -1 10 0 10 1 10 2 Qg [nC] VDS [V] Forward characteristic of reverse of diode 10 2 Avalanche energy derating Eas=f(starting Tch):Vcc=50V,IAV=20A 800 700 IF=f(VSD):80s Pulse test,VGS=0V 10 1 600 Tch=25 C typ. 500 10 0 o Eas [mJ] IF [A] 400 300 200 100 10 -1 10 -2 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 50 o 100 150 VSD [V] Starting Tch [ C] 3 2SK2879-01 FUJI POWER MOSFET 10 1 Transient thermal impedance Zthch=f(t) parameter:D=t/T 10 0 D=0.5 Zthch-c [K/W] 0.2 10 -1 0.1 0.05 0.02 0.01 0 t D= T t T 10 -2 10 -3 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t [s] 4 |
Price & Availability of 2SK2879-0107
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |