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2SK3438
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV)
2SK3438
DC-DC Converter, Relay Drive and Motor Drive Applications
* * * * Low drain-source ON resistance: RDS (ON) = 0.74 (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 600 V) Enhancement mode: Vth = 3.0~5.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage DC (Note 1) Drain current Pulse (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 30 10 30 80 252 10 8 150 -55~150 A W mJ A mJ C C Unit V V V
Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA
SC-97 2-9F1B
Weight: 0.74 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics Thermal resistance, channel to case Symbol Rth (ch-c) Max 1.56 Unit C/W
4
1
Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: VDD = 90 V, Tch = 25C (initial), L = 4.41 mH, RG = 25 , IAR = 10 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution.
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2SK3438
Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) Yfs Ciss Crss Coss tr ton tf toff Qg Qgs Qgd VDD 400 V, VGS = 10 V, ID = 10 A - ID = 5 A VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V IG = 10 A, VDS = 0 V VDS = 600 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 5 A VDS = 15 V, ID = 5 A Min 30 600 3.0 2.0 Typ. 0.74 4.5 1200 10 130 13 Max 10 100 5.0 1.0 pF Unit A V A V V S
10 V VGS 0V 10 RL = 60 VDD 300 V - VOUT

ns

Turn-ON time Switching time Fall time
40
8

nC
Duty < 1%, tw = 10 s = Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge
50 28 16 12
Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 10 A, VGS = 0 V IDR = 10 A, VGS = 0 V, dIDR/dt = 100 A/s Min Typ. 1600 17 Max 10 30 -1.7 Unit A A V ns C
Marking
Part No. (or abbreviation code)
K3438
Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.
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2SK3438
ID - VDS
10 Common source Tc = 25C Pulse test 15 10 7.75 16 20 Common source Tc = 25C Pulse test
ID - VDS
15 10 8.5
(A)
ID
6
ID
7.25 7.0
(A)
8
7.5
12
8.0
Drain current
Drain current
4
6.75 6.5
8
7.5 7.25 7.0
2
VGS = 6.0 V
4
6.5 VGS = 6.0 V
0 0
4
8
12
16
20
0 0
10
20
30
40
50
Drain-source voltage
VDS
(V)
Drain-source voltage
VDS
(V)
ID - VGS
12
VDS - VGS
20 Common source Tc = 25C Pulse test
10
(V)
16
Common source VDS = 20 V Pulse test
(A)
ID
8
VDS Drain-source voltage
12 ID = 10 A 8 25
Drain current
6
4
2
100
4
5 2.5
Tc = -55C
0 0
2
4
6
8
10
0 0
4
8
12
16
20
Gate-source voltage
VGS
(V)
Gate-source voltage
VGS
(V)
Yfs - ID
100 Common source VDS = 20 V Pulse test 100 Common source Tc = 25C Pulse test
RDS (ON) - ID
Yfs
(S)
Forward transfer admittacne
10 Tc = -55C 25 100
Drain-source on resistance RDS (ON) ()
10
1
1
VGS = 10, 15 V
0.1 0.1
1
10
100
0.1 0.1
1
10
100
Drain current
ID
(A)
Drain current
ID
(A)
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2SK3438
RDS (ON) - Tc
2.5 Common source VGS = 10 V Pulse test 100
IDR - VDS (A)
Common source Tc = 25C Pulse test
Drain-source on resistance RDS (ON) ()
2.0
ID = 10 A 5 2.5
IDR Drain reverse current
10
1.5
1.0
1
0.5
10 0.1 0 5 -0.2 3 -0.4 1 -0.6
0 -80
VGS = 0, -1 V -0.8 -1 -1.2
-40
0
40
80
120
160
Channel temperature
Tc
(C)
Drain-source voltage
VDS
(V)
Capacitance - VDS
10000 6
Vth - Tc Vth (V)
Common source VDS = 10 V ID = 1 mA Pulse test
5
(pF)
1000
Ciss
Gate threshold voltage
4
C
3
Capacitance
100 Coss
2
10 Common source VGS = 0 V f = 1 MHz Tc = 25C 1 0.1 1 10 100 1000 Crss
1
0 -80
-40
0
40
80
120
160
Channel temperature
Tc
(C)
Drain-source Voltage
VDS
(V)
PD - Tc
100 500
Dynamic input/output characteristics
Common source ID = 10 A Tc = 25C Pulse test VDS 300 VDD = 100 V 200 400 200 VGS 100 4 8 12 20
(W)
(V)
PD
80
400
16
VDS
Drain Power dissipation
Drain-source Voltage
40
20
0 0
40
80
120
160
200
0 0
10
20
30
0 40
Channel temperature
Tc
(C)
Total gate charge
Qg
(nC)
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Gate-source voltage
60
VGS
(V)
2SK3438
rth - tw
10
Normalized transient thermal impedance rth (t)/Rth (ch-a)
1
Duty = 0.5 0.2 0.1
0.1
0.05 0.02 0.01 PDM t T Duty = t/T Rth (ch-c) = 1.56C/W
0.01
Single pulse
0.001 10
100
1m
10 m
100 m
1
10
Pulse width
tw
(S)
Safe operating area
100 400
EAS - Tch
Avalanche energy EAS (mJ)
ID max (pulsed) *
300
10
ID max (continuous) *
100 s *
Drain current ID (A)
1 ms *
200
1
DC operation Tc = 25C
100
0 25 0.1 * Single nonrepetitive pulse Tc = 25C
50
75
100
125
150
Channel temperature (initial) Tch (C)
Curves must be derated linearly with increase in temperature. 0.01 1 10 VDSS max 100 1000
15 V -15 V
BVDSS IAR VDD VDS
Drain-source voltage
VDS (V)
Test circuit RG = 25 VDD = 90 V, L = 4.41 mH
Wave form
AS =
1 B VDSS L I2 B 2 VDSS - VDD
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RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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