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| AP2626GY Pb Free Plating Product Advanced Power Electronics Corp. Simple Drive Requirement Smaller Outline Package Surface mount package RoHS compliant SOT-26 G1 D1 D2 S1 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) G2 S2 30V 72m 3.3A ID Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. G1 D1 D2 G2 S1 S2 The SOT-26 package is universally used for all commercial-industrial applications. Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range 3 3 Rating 30 20 3.3 2.6 10 1.2 0.01 -55 to 150 -55 to 150 Units V V A A A W W/ Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 110 Unit /W Data and specifications subject to change without notice 200519062-1/4 AP2626GY Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA 2 Min. 30 1 - Typ. 0.03 2.8 3.2 0.9 1.7 3.7 10.1 11.8 2.3 170 50 35 0.5 Max. Units 72 120 3 1 25 100 5.1 270 0.8 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=3A VGS=4.5V, ID=2A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=VGS, ID=250uA VDS=5V, ID=3A VDS=30V, VGS=0V VDS=24V, VGS=0V VGS=20V ID=3A VDS=25V VGS=4.5V VDS=15V ID=1A RG=3.3,VGS=10V RD=15 VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 Test Conditions IS=1A, VGS=0V IS=3A, VGS=0V, dI/dt=100A/s Min. - Typ. 15 8 Max. Units 1.2 V ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board, t 5sec ;180/W when mounted on min. copper pad. 2/4 AP2626GY 12 12 o T A =25 C ID , Drain Current (A) 10 V 7.0 V 5.0 V 4.5 V ID , Drain Current (A) 8 T A = 150 C o 10V 7.0V 5.0V 4.5V 8 4 4 V G = 3.0 V 0 0 1 2 3 V G = 3.0 V 0 0 1 2 3 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 240 1.8 ID=2A T A =25 200 ID=3A V G = 10 V Normalized RDS(ON) 0 2 4 6 8 10 RDS(ON) (m) 1.4 160 120 1.0 80 40 0.6 25 50 75 100 125 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 200.0 6 5 T j =150 o C 4 T j =25 o C RDS(ON) (m) 160.0 IS(A) 3 120.0 V GS =4.5V 2 80.0 1 V GS =10V 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 40.0 0 2 4 6 8 10 V SD , Source-to-Drain Voltage (V) I D , Drain Current (A) Fig 5. Forward Characteristic of Reverse Diode Fig 6. On-Resistance vs. Drain Current 3/4 AP2626GY 15 1000 f=1.0MHz VGS , Gate to Source Voltage (V) ID=3A 12 9 C (pF) V DS = 15 V V DS = 20 V V DS = 25 V C iss 100 6 C oss C rss 3 0 0 2 4 6 8 10 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthja) Duty factor=0.5 10 100us ID (A) 1 0.2 1ms 10ms 0.1 0.1 0.05 PDM t 0.02 0.1 T A =25 o C Single Pulse 100ms 1s DC T Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja=180 oC/W 0.01 Single Pulse 0.01 0.1 1 10 100 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 12 V DS =5V 9 VG QG T j =25 o C T j =150 o C ID , Drain Current (A) 4.5V QGS QGD 6 3 Charge 0 Q 0 1 2 3 4 5 6 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4/4 |
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