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| 2N3499L Silicon NPN Transistor D a ta S h e e t Description Semicoa Semiconductors offers: * Screening and processing per MIL-PRF-19500 Appendix E * JAN level (2N3499LJ) * JANTX level (2N3499LJX) * JANTXV level (2N3499LJV) * QCI to the applicable level * 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV * Radiation testing (total dose) upon request Applications * General purpose * Low power * NPN silicon transistor Features * * * * Hermetically sealed TO-5 metal can Also available in chip configuration Chip geometry 5620 Reference document: MIL-PRF-19500/366 Benefits Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 * Qualification Levels: JAN, JANTX, and JANTXV * Radiation testing available TC = 25C unless otherwise specified Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25OC Derate linearly above 25OC Thermal Resistance Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PT Rating 100 100 6 500 1 5.71 175 -65 to +200 -65 to +200 Unit Volts Volts Volts mA W mW/C C/W C C RJA TJ TSTG Copyright(c) 2004 Rev. H.2 Semicoa 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2 www.SEMICOA.com 2N3499L Silicon NPN Transistor D a ta S h e e t ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25C Off Characteristics Parameter Collector-Emitter Breakdown Voltage Collector-Base Cutoff Current Collector-Emitter Cutoff Current Emitter-Base Cutoff Current Symbol V(BR)CEO ICBO1 ICBO2 ICBO3 ICEO IEBO1 IEBO2 Test Conditions IC = 10 mA VCB = 100 Volts VCB = 50 Volts VCB = 50 Volts, TA = 150C VCE = 80 Volts VEB = 6 Volts VEB = 4 Volts Min 100 10 50 50 1 10 25 Typ Max Units Volts A nA A A A nA On Characteristics Parameter Symbol hFE1 hFE2 hFE3 hFE4 hFE6 hFE7 VBEsat1 VBEsat3 VCEsat1 VCEsat3 Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% DC Current Gain Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Test Conditions IC = 0.1 mA, VCE = 10 Volts IC = 1.0 mA, VCE = 10 Volts IC = 10 mA, VCE = 10 Volts IC = 150 mA, VCE = 10 Volts IC = 500 mA, VCE = 10 Volts IC = 150 mA, VCE = 10 Volts TA = -55C IC = 10 mA, IB = 1 mA IC = 300 mA, IB = 30 mA IC = 10 mA, IB = 1 mA IC = 300 mA, IB = 30 mA Min 35 50 75 100 20 45 Typ Max Units 300 0.8 1.4 0.2 0.6 Volts Volts Dynamic Characteristics Parameter Magnitude - Common Emitter, Short Circuit Forward Current Transfer Ratio Small Signal Short Circuit Forward Current Transfer Ratio Open Circuit Output Capacitance Open Circuit Input Capacitance Symbol |hFE| hFE COBO CIBO NF1 Noise Figure NF2 Test Conditions VCE = 20 Volts, IC = 20 mA, f = 100 MHz VCE = 10 Volts, IC = 10 mA, f = 1 kHz VCB = 10 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz VEB = 0.5 Volts, IC = 0 mA, 100 kHZ < f < 1 MHz VCE = 10 Volts, IC = 0.5 mA, f = 1 kHz, Rg = 1 k VCE = 10 Volts, IC = 0.5 mA, f = 10 kHz, Rg = 1 k VEB = 5 Volts, IC = 150 mA, IB1 = 15 mA IC = 150 mA, IB1=IB2=15 mA Min 1.5 75 Typ Max 8 375 10 80 16 dB 6 pF pF Units Switching Characteristics Saturated Turn-On Time Saturated Turn-Off Time tON tOFF 115 1,150 ns ns Copyright(c) 2004 Rev. H.2 Semicoa 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2 www.SEMICOA.com |
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