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| 2N3507A Silicon NPN Transistor D a ta S h e e t Description SEMICOA offers: * Screening and processing per MIL-PRF-19500 Appendix E * JAN level (2N3507AJ) * JANTX level (2N3507AJX) * JANTXV level (2N3507AJV) * JANS level (2N3507AJS) * QCI to the applicable level * 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS * Radiation testing (total dose) upon request Applications * General purpose switching transistor * Low power * NPN silicon transistor Features * * * * Hermetically sealed TO-39 metal can Also available in chip configuration Chip geometry 1506 Reference document: MIL-PRF-19500/349 Benefits Please contact SEMICOA for special configurations www.SEMICOA.com or (714) 979-1900 * Qualification Levels: JAN, JANTX, JANTXV and JANS * Radiation testing available TC = 25C unless otherwise specified Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25 C Derate linearly above 25OC Power Dissipation, TC = 25OC Derate linearly above 25OC Thermal Resistance Operating Junction Temperature Storage Temperature O Symbol VCEO VCBO VEBO IC PT PT Rating 50 80 5 3 1 5.71 5 28.6 175 -65 to +200 Unit Volts Volts Volts A W mW/C W mW/C C/W C RJA TJ TSTG Copyright(c) 2007 Rev. E SEMICOA 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2 www.SEMICOA.com 2N3507A Silicon NPN Transistor D a ta S h e e t ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25C Off Characteristics Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Cutoff Current Collector-Emitter Cutoff Current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEX1 ICEX2 Test Conditions IC = 100 A IC = 10 mA IE = 10 A VCE = 60 Volts, VEB = 4 Volts VCE = 60 Volts, VEB = 4 Volts, TA = 150C Min 80 50 5 1 1.5 Typ Max Units Volts Volts Volts A mA On Characteristics Parameter Symbol hFE1 hFE2 hFE3 hFE4 hFE5 VBEsat1 VBEsat2 VBEsat3 VCEsat1 VCEsat2 VCEsat3 Test Conditions IC = 500 mA, VCE = 1 Volts IC = 1.5 A, VCE = 2 Volts IC = 2.5 A, VCE = 3 Volts IC = 3.0 A, VCE = 5 Volts IC = 500 mA, VCE = 2 Volts TA = -55C IC = 500 mA, IB = 50 mA IC = 1.5 A, IB = 150 mA IC = 2.5 A, IB = 250 mA IC = 500 mA, IB = 50 mA IC = 1.5 A, IB = 150 mA IC = 2.5 A, IB = 250 mA Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% DC Current Gain Min 35 30 25 20 17 Typ Max 175 150 Units Base-Emitter Saturation Voltage 0.8 Collector-Emitter Saturation Voltage 1.0 1.3 2.0 0.5 1.0 1.5 Volts Volts Dynamic Characteristics Parameter Magnitude - Common Emitter, Short Circuit Forward Current Transfer Ratio Open Circuit Output Capacitance Open Circuit Input Capacitance Delay Time Rise Time Symbol |hFE| COBO CIBO td tr Test Conditions VCE = 5 Volts, IC = 100 mA, f = 20 MHz VCB = 10 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz VEB = 3 Volts, IC = 0 mA, 100 kHZ < f < 1 MHz IC = 1.5 A, IB1 = 150 mA IC = 1.5 A, IB1 = 150 mA Min 3 Typ Max 15 40 300 15 30 pF pF ns ns Units Switching Characteristics Storage Time Fall Time ts tf IC = 1.5 A, IB1=IB2 = 150 mA IC = 1.5 A, IB1=IB2 = 150 mA 55 35 ns ns Copyright(c) 2007 Rev. E SEMICOA 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2 www.SEMICOA.com |
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