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| 2N5151L Silicon PNP Transistor Data Sheet Description Semicoa Semiconductors offers: * Screening and processing per MIL-PRF-19500 Appendix E * JAN level (2N5151LJ) * JANTX level (2N5151LJX) * JANTXV level (2N5151LJV) * JANS level (2N5151LJS) * QCI to the applicable level * 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS * Radiation testing (total dose) upon request Applications * High-speed power switching * Low power * PNP silicon transistor Features * * * * Hermetically sealed TO-5 metal can Also available in chip configuration Chip geometry 9702 Reference document: MIL-PRF-19500/545 Benefits Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25OC Derate linearly above 25OC Power Dissipation, TC = 25OC Derate linearly above 25OC Thermal Resistance Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PT PT * Qualification Levels: JAN, JANTX, JANTXV and JANS * Radiation testing available TC = 25C unless otherwise specified Rating 80 100 5.5 2 1 5.7 11.8 66.7 175 15 -65 to +200 Unit Volts Volts Volts A W mW/C W mW/C C/W C RJA RJC TJ TSTG Copyright 2002 Rev. D Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2 www.SEMICOA.com 2N5151L Silicon PNP Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25C Off Characteristics Parameter Collector-Emitter Breakdown Voltage Collector-Emitter Cutoff Current Collector-Emitter Cutoff Current Collector-Emitter Cutoff Current Collector-Emitter Cutoff Current Emitter-Base Cutoff Current Emitter-Base Cutoff Current On Characteristics Parameter Symbol hFE1 hFE2 hFE3 hFE4 VBE VBEsat1 VBEsat2 VCEsat1 VCEsat2 Symbol |hFE| hFE COBO Test Conditions IC = 50 mA, VCE = 5 Volts IC = 2.5 A, VCE = 5 Volts IC = 5 A, VCE = 5 Volts IC = 2.5 A, VCE = 5 Volts TA = -55C VCE = 5 Volts, IC = 2.5 mA IC = 2.5 A, IB = 250 mA IC = 5 A, IB = 500 mA IC = 2.5 A, IB = 250 mA IC = 5 A, IB = 500 mA Test Conditions VCE = 5 Volts, IC = 500 mA, f = 10 MHz VCE = 5 Volts, IC = 100 mA, f = 1 kHz VCB = 10 Volts, IE = 0 mA, f = 1 MHz Symbol V(BR)CEO ICES1 ICES2 ICEO ICEX IEBO1 IEBO1 Test Conditions IC = 100 mA VCE = 60 Volts VCE = 100 Volts VCE = 40 Volts VCE = 60 Volts, VEB = 2 Volts, TA = 150C VEB = 4 Volts VEB = 5.5 Volts Min 80 1 1 50 500 1 1 Typ Max Units Volts A mA A nA A mA Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% DC Current Gain Min 20 30 20 15 Typ Max 90 Units Base-Emitter Voltage Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Dynamic Characteristics Parameter Magnitude - Common Emitter, Short Circuit Forward Current Transfer Ratio Small Signal Short Circuit Forward Current Transfer Ratio Open Circuit Output Capacitance Switching Characteristics Saturated Turn-On Time Storage Time Fall Time Saturated Turn-Off Time 1.45 1.45 2.20 0.75 1.50 Volts Volts Volts Min 6 20 Typ Max Units 250 pF tON ts tf tOFF IC = 5 A, IB1= 500 mA, IB2= -500 mA, VBEoff = 3.7 V, RL = 6 0.5 1.4 0.5 1.5 s s s s Copyright 2002 Rev. D Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2 www.SEMICOA.com |
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