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| 2N918 Silicon NPN Transistor D a ta S h e e t Description Semicoa Semiconductors offers: * Screening and processing per MIL-PRF-19500 Appendix E * JAN level (2N918J) * JANTX level (2N918JX) * JANTXV level (2N918JV) * JANS level (2N918JS) * QCI to the applicable level * 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS * Radiation testing (total dose) upon request Applications * Ultra-high frequency transistor * Low power * NPN silicon transistor Features * * * * Hermetically sealed TO-72 metal can Also available in chip configuration Chip geometry 0003 Reference document: MIL-PRF-19500/301 Benefits Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 * Qualification Levels: JAN, JANTX, JANTXV and JANS * Radiation testing available TC = 25C unless otherwise specified Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25C Derate linearly above 25C Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PT TJ TSTG Rating 15 30 3 50 200 1.14 -65 to +200 Unit Volts Volts Volts mA mW mW/C C Copyright(c) 2004 Rev. F.2 Semicoa 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2 www.SEMICOA.com 2N918 Silicon NPN Transistor D a ta S h e e t ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25C Off Characteristics Parameter Collector-Emitter Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current Symbol V(BR)CEO ICBO1 ICBO2 ICBO3 IEBO1 IEBO2 Test Conditions IC = 3 mA VCB = 25 Volts VCB = 30 Volts VCB = 25 Volts, TA = 150C VEB = 2.5 Volts VEB = 3 Volts Min 15 10 1 1 10 10 Typ Max Units Volts nA A A nA A On Characteristics Parameter Symbol hFE1 hFE2 hFE3 hFE4 VBEsat VCEsat Test Conditions IC = 0.5 mA, VCE = 10 Volts IC = 3 mA, VCE = 1 Volts IC = 10 mA, VCE = 10 Volts IC = 3 mA, VCE = 1 Volts TA = -55C IC = 10 mA, IB = 1 mA IC = 10 mA, IB = 1 mA Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% DC Current Gain Min 10 20 20 10 Typ Max 200 Units Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 1.0 0.4 Volts Volts Dynamic Characteristics Parameter Magnitude - Common Emitter, Short Circuit Forward Current Transfer Ratio Open Circuit Output Capacitance Noise Figure Power Gain Collector Base time constant Collector efficiency Oscillator Power Output Symbol |hFE| COBO NF Gpe rb'CC PO Test Conditions VCE = 10 Volts, IC = 4 mA, f = 100 MHz VCB = 10 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz VCE = 6 Volts, IC = 1 mA, f = 60 MHz, Rg = 2.5 M VCB = 12 Volts, IC = 6 mA, f = 200 MHz VCB = 10 Volts, IE = -4 mA, f = 79.8 MHz VCB = 15 Volts, IC = 8 mA, f = 500 MHz VCB = 15 Volts, IC = 8 mA, f = 500 MHz Min 6 Typ Max 18 1.7 6 15 25 30 25 pF dB dB ps mW % Units Copyright(c) 2004 Rev. F.2 Semicoa 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2 www.SEMICOA.com |
Price & Availability of 2N91804
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