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| 2SK3602-01 FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) TO-220AB Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-repetitive Avalanche current Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Symbol VDS VDSX *5 ID ID(puls] VGS IAS *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25C Tc=25C Tch Tstg Ratings 150 120 23 92 30 23 130.9 20 5 2.02 105 +150 -55 to +150 Unit V V A A V A mJ kV/s kV/s W C C Equivalent circuit schematic Drain(D) Gate(G) Source(S) *1 L=363H, Vcc=48V, Tch=25C, See to Avalanche Energy Graph *2 Tch < 150C = *3 IF< -ID, -di/dt=50A/s, Vcc < BVDSS, Tch < 150C *4 VDS < 150V *5 VGS=-30V = = = = Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS VDS=150V VGS=0V VDS=120V VGS=0V VGS=30V VDS=0V ID=8A VGS=10V ID=8A VDS=25V VDS=75V VGS=0V f=1MHz VCC=48V ID=8A VGS=10V RGS=10 VCC=75V ID=16A VGS=10V L=363H Tch=25C IF=16A VGS=0V Tch=25C IF=16A VGS=0V -di/dt=100A/s Tch=25C Tch=25C Tch=125C 10 79 12 760 130 6 12 2.8 22 6.2 21 9 6 1.10 0.13 0.59 Min. 150 3.0 Typ. Max. 5.0 25 250 100 105 1140 195 9 18 4.2 33 9.3 31.5 13.5 9 1.65 Units V V A nA m S pF 6 ns nC 23 A V s C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 1.191 62.0 Units C/W C/W www.fujielectric.co.jp/denshi/scd 1 2SK3602-01 Characteristics Allowable Power Dissipation PD=f(Tc) FUJI POWER MOSFET 120 400 Maximum Avalanche Energy vs. starting Tch E(AS)=f(starting Tch):Vcc=48V IAS=9A 350 100 300 80 250 EAS [mJ] IAS=14A 200 PD [W] 60 150 40 100 20 50 IAS=23A 0 0 25 50 75 100 125 150 0 0 25 50 75 100 125 150 Tc [C] starting Tch [C] Typical Output Characteristics ID=f(VDS):80s Pulse test,Tch=25C 60 100 Typical Transfer Characteristic ID=f(VGS):80s Pulse test, VDS=25V,Tch=25C 50 20V 10V 8V 40 10 ID [A] 30 7.5V 7.0V ID[A] 1 0.1 12 0 1 2 3 4 5 6 7 8 9 10 10 20 6.5V 10 6.0V VGS=5.5V 0 0 2 4 6 8 VDS [V] VGS[V] Typical Transconductance gfs=f(ID):80s Pulse test, VDS=25V,Tch=25C 100 0.30 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80s Pulse test, Tch=25C VGS= 5.5V 6.0V 6.5V 7.0V 7.5V 0.25 8V RDS(on) [ ] 10 0.20 10V 0.15 gfs [S] 1 0.10 20V 0.05 0.1 0.1 0.00 1 10 100 0 10 20 30 40 ID [A] ID [A] 2 2SK3602-01 FUJI POWER MOSFET Drain-Source On-state Resistance RDS(on)=f(Tch):ID=8A,VGS=10V 300 7.0 6.5 250 6.0 5.5 5.0 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250 A max. RDS(on) [ m ] 200 VGS(th) [V] 4.5 4.0 3.5 3.0 2.5 min. 150 max. 100 typ. 50 2.0 1.5 1.0 0.5 0 -50 -25 0 25 50 75 100 125 150 0.0 -50 -25 0 25 50 75 100 125 150 Tch [C] Tch [C] Typical Gate Charge Characteristics VGS=f(Qg):ID=16A, Tch=25C 14 10 0 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 12 10 10 -1 Ciss VGS [V] 8 6 4 Vcc= 75V 10 -2 C [nF] Coss Crss 2 0 0 10 20 30 40 -3 10 10 -1 10 0 10 1 10 2 Qg [nC] VDS [V] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80s Pulse test,Tch=25C 100 10 3 Typical Switching Characteristics vs. ID t=f(ID):Vcc=48V, VGS=10V, RG=10 tf 10 10 2 IF [A] t [ns] td(off) td(on) 1 10 1 tr 0.1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 10 0 10 -1 10 0 10 1 10 2 VSD [V] ID [A] 3 2SK3602-01 Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25C,Vcc=48V FUJI POWER MOSFET 10 2 Avalanche Current I AV [A] Single Pulse 10 1 10 0 10 -1 10 -8 10 -2 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 tAV [sec] 10 1 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 0 Zth(ch-c) [C/W] 10 -1 10 -2 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] http:www.fujielectric.co.jp/denshi/scd/ 4 |
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