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DATA SHEET
BAV19WS~BAV21WS
SURFACE MOUNT SWITCHING DIODES
VOLTAGE FEATURES
* Fast switching speed.
.054(1.35)
.078(1.95) .068(1.75)
120-250 Volts
POWER
200mWatts
SOD-323
Unit: inch (mm)
.014(.35)
* Electrically Identical to Standard JEDEC * High Conductance
.009(.25)
* Surface mount package Ideally Suited for Automatic insertion
.045(1.15)
.006(.15)
Normal : 80~95% Sn, 5~20% Pb Pb free: 98.5% Sn above
.107(2.7) .090(2.3)
MECHANICAL DATA
Case: SOD-323, Plastic Terminals: Solderable per MIL-STD-202, Method 208 Approx. Weight: 0.0045 gram
.012(.30)MIN.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25OC ambient temperature unless otherwise specified. For capacitive load, derate current by 20%.
PA RA M E TE R M a r k i ng C o d e R e ve r s e V o l t a g e P e a k R e ve r s e V o l t a g e R e c t i f i e d C ur r e nt ( A ve r a g e ) , H a l f Wa ve R e c t i f i c a t i o n w i t h R e s i s t i ve L o a d a nd f > = 5 0 H z P e a k F o r w a r d S ur g e C ur r e nt , 1 . 0 us P o w e r D i s s i p a t i o n D e r a t e A b o ve 2 5 OC M a xi m um F o r w a r d V o l t a g e a t 0 . 1 A M a xi m um D C R e ve r s e C ur r e nt a t R a t e d D C B l o c k i ng V o l t a g e TJ = 2 5 O C Ty p i c a l J u n c t i o n C a p a c i t a n c e ( N o t e s 1 ) M a xi m um R e ve r s e R e c o ve r y ( N o t e s 2 ) M a xi m um The r m a l R e s i s t a nc e O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e VR V RM IO IFSM P TOT VF IR CJ TRR R J A TJ, TSTG S YM B O L B AV 1 9 W S A8 100 120 B AV 2 0 W S A80 150 200 200 2 .5 200 1 .0 0 .1 5 .0 50 640 -5 5 to +1 5 0
O
.002(.05)
* Both normal and Pb free product are available :
.038(.95) .027(.70)
B AV 2 1 W S A82 200 250
U N IT S
V V mA A mW V uA pF ns C/W
O
C
NOTE: 1. CJ at VR=0, f=1MHZ 2.From IF=10mA to IR=1mA, VR=6Volts, RL=100
STAD-MAY.18.2004
PAGE . 1
1000
100
TJ =25OC
100
I R , LEAKAGE CURRENT, uA
FORWARD CURRENT, mA
10
10
1.0
1.0
0.1
0.1
0.01
0
1.0
2.0
0.01
0
100
O
200
FORWARD VOLTAGE, VOLTS
T J , JUNCTION TEMPERATURE, C Fig.2 LEAKAGE CURRENT vs JUNCTION TEMPERATURE
FIG. 1-TYPICAL FORWARD CHARACTERISTIC
4.5
P D, POWER DISSIPATION (mW)
6.0
400
DIODE CAPACITANCE, pF
300
3.0
200
1.5
100
0
0
2
4
6
8
0
50
100
150
O
200
REVERSE VOLTAGE, VOLTS
AMBIENT TEMPERATURE( C) FIG. 4 POWER DERATING CURVE
FIG. 3 TYPICAL JUNCTION CAPACITANCE
STAD-MAY.18.2004
PAGE . 2

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