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Freescale Semiconductor Technical Data
Document Number: MRF5S9080N Rev. 1, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. GSM Application * Typical GSM Performance: VDD = 26 Volts, IDQ = 600 mA, Pout = 80 Watts CW, Full Frequency Band (869 - 894 MHz or 921 - 960 MHz). Power Gain -- 18.5 dB Drain Efficiency -- 60% GSM EDGE Application * Typical GSM EDGE Performance: VDD = 26 Volts, IDQ = 550 mA, Pout = 36 Watts Avg., Full Frequency Band (869 - 894 MHz or 921 - 960 MHz). Power Gain -- 19 dB Drain Efficiency -- 42% Spectral Regrowth @ 400 kHz Offset = - 63 dBc Spectral Regrowth @ 600 kHz Offset = - 78 dBc EVM -- 2.5% rms * Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 80 Watts CW Output Power Features * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched for Ease of Use * Qualified Up to a Maximum of 32 VDD Operation * Integrated ESD Protection * 200_C Capable Plastic Package * RoHS Compliant * In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. Table 1. Maximum Ratings
Rating Drain- Source Voltage Gate- Source Voltage Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS Tstg TJ
MRF5S9080NR1 MRF5S9080NBR1
869 - 960 MHz, 80 W, 26 V GSM/GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs
CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRF5S9080NR1
CASE 1484 - 04, STYLE 1 TO - 272 WB - 4 PLASTIC MRF5S9080NBR1 Value - 0.5, +65 - 0.5, +15 - 65 to +150 200 Unit Vdc Vdc C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 79C, 80 W CW Case Temperature 80C, 36 W CW Symbol RJC Value (1,2) 0.50 0.54 Unit C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF5S9080NR1 MRF5S9080NBR1 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1B (Minimum) A (Minimum) IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit C
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 400 Adc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 600 mAdc, Measured in Functional Test) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 2 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Power Gain Drain Efficiency Input Return Loss Pout @ 1 dB Compression Point Crss Coss -- -- 1.8 600 -- -- pF pF VGS(th) VGS(Q) VDS(on) 2 3.5 -- 2.8 3.9 0.27 3.5 4.5 0.3 Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 500 Adc Adc nAdc Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ = 600 mA, Pout = 80 W CW, f = 960 MHz Gps D IRL P1dB 17 55 -- 80 18.5 60 - 15 90 20 -- -9 -- dB % dB W
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ = 550 mA, Pout = 36 W Avg., 869- 894 MHz, 920 - 960 MHz GSM EDGE Modulation Power Gain Drain Efficiency Error Vector Magnitude Spectral Regrowth at 400 kHz Offset Spectral Regrowth at 600 kHz Offset 1. Part is internally matched on input. Gps D EVM SR1 SR2 -- -- -- -- -- 19 42 2.5 - 63 - 77 -- -- -- -- -- dB % % rms dBc dBc
MRF5S9080NR1 MRF5S9080NBR1 2 RF Device Data Freescale Semiconductor
R1 VBIAS C1 R2 C4 C7 Z12 Z6 C8 C5 C2 + C21
VSUPPLY
R3 RF INPUT
C16 Z7
C18 Z8 Z9 Z10 C11 Z11
RF OUTPUT
Z1
Z2 C10 C12
Z3
Z4
Z5 C15 DUT C17 C19 C20
C13
C14 Z13
C9
C6
C3
Z1 Z2 Z3 Z4 Z5 Z6 Z7
1.220 x 0.087 Microstrip 1.110 x 0.087 Microstrip 0.536 x 0.087 Microstrip 0.310 x 0.087 Microstrip 0.430 x 0.591 Microstrip 1.567 x 0.059 Microstrip 0.734 x 0.788 Microstrip
Z8 Z9 Z10 Z11 Z12, Z13 PCB
0.138 x 0.087 Microstrip 0.411 x 0.087 Microstrip 0.403 x 0.087 Microstrip 0.560 x 0.087 Microstrip 1.693 x 0.087 Microstrip Taconic TLX8 - 0300, 0.030, r = 2.55
Figure 1. MRF5S9080NR1(NBR1) Test Circuit Schematic -- 900 MHz
Table 6. MRF5S9080NR1(NBR1) Test Circuit Component Designations and Values -- 900 MHz
Part C1, C2, C3 C4, C5, C6 C7, C8, C9 C10, C11 C12 C13 C14, C17, C18 C15, C16 C19 C20 C21 R1, R2 R3 Description 4.7 F Chip Capacitors (1812) 10 nF 200B Chip Capacitors 33 pF 600B Chip Capacitors 22 pF 600B Chip Capacitors 1.8 pF 600B Chip Capacitor 9.1 pF 600B Chip Capacitor 8.2 pF 600B Chip Capacitors 10 pF 600B Chip Capacitors 4.7 pF 600B Chip Capacitor 3.6 pF 600B Chip Capacitor 220 F, 63 V Electrolytic Capacitor, Axial 10 k, 1/4 W Chip Resistors (1206) 10 , 1/4 W Chip Resistor (1206) Part Number C4532X5R1H475MT 200B103MW 600B330JW 600B220FW 600B1R8BW 600B9R1BW 600B8R2BW 600B100FW 600B4R7BW 600B3R6BW 13668221 Manufacturer TDK ATC ATC ATC ATC ATC ATC ATC ATC ATC Philips
MRF5S9080NR1 MRF5S9080NBR1 RF Device Data Freescale Semiconductor 3
C21 VGG C4 C7 C8 C5 VDD
C1
R1
R2
C2
R3 C10 C13 C14 CUT OUT AREA
C16
C18
C19 C20
C11
C15
C17
C3 C12
C9
C6 MRF5S9080N/NB Rev. 1
Figure 2. MRF5S9080NR1(NBR1) Test Circuit Component Layout -- 900 MHz
MRF5S9080NR1 MRF5S9080NBR1 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS - 900 MHz
19.5 19 Gps, POWER GAIN (dB) 18.5 Gps 18 17.5 17 16.5 860 IRL VDD = 26 Vdc IDQ = 600 mA 20 0 -20 -40 1020 80 60 40 D, DRAIN EFFICIENCY (%) IRL, INPUT RETURN LOSS (dB) D, DRAIN EFFICIENCY (%) IRL, INPUT RETURN LOSS (dB)
D
880
900
920
940
960
980
1000
f, FREQUENCY (MHz)
Figure 3. Power Gain, Input Return Loss and Drain Efficiency versus Frequency @ Pout = 80 Watts CW
19.2 60
Gps, POWER GAIN (dB)
19
D
40
18.8 Gps IRL 18.4 VDD = 26 Vdc IDQ = 600 mA
20
18.6
0
-20
18.2 860
880
900
920
940
960
980
1000
-40 1020
f, FREQUENCY (MHz)
Figure 4. Power Gain, Input Return Loss and Drain Efficiency versus Frequency @ Pout = 36 Watts CW
20 19 Gps, POWER GAIN (dB)
20 IDQ = 900 mA 19 750 mA Gps, POWER GAIN (dB) 18 17 16 32 V 15 14 VDD = 12 V 13 1 10 100 1000 0 50 100 150 Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) CW 16 V 20 V 24 V 28 V IDQ = 600 mA f = 940 MHz 200
18 600 mA 450 mA 17 300 mA 16 15 14 VDD = 26 Vdc f = 940 MHz
Figure 5. Power Gain versus Output Power
Figure 6. Power Gain versus Output Power
MRF5S9080NR1 MRF5S9080NBR1 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS - 900 MHz
-30_C 20 Gps, POWER GAIN (dB) 19 18 17 16 15 14 1 10 100 Pout, OUTPUT POWER (WATTS) CW D VDD = 26 Vdc IDQ = 600 mA f = 940 MHz Gps TC = -30_C 25_C 85_C EVM, ERROR VECTOR MAGNITUDE (% rms) 21 25_C 85_C 70 D, DRAIN EFFICIENCY (%) 60 50 40 30 20 10 6 5 4 3 2 1 3 W Avg. 0 900 910 920 930 940 950 960 970 980 f, FREQUENCY (MHz) 13 W Avg. VDD = 28 Vdc IDQ = 550 mA
Pout = 53 W Avg.
0 1000
Figure 7. Power Gain and Drain Efficiency versus CW Output Power
SPECTRAL REGROWTH @ 400 kHz and 600 kHz (dBc)
Figure 8. EVM versus Frequency
EVM, ERROR VECTOR MAGNITUDE (% rms)
-50 -55 -60 -65 -70 -75 -80 -85 -90 900 910 920 930 940 950 960 970 980 f, FREQUENCY (MHz) SR @ 600 kHz 53 W Avg. 13 W Avg. 3 W Avg. 13 W Avg. 3 W Avg. SR @ 400 kHz Pout = 53 W Avg. VDD = 28 Vdc IDQ = 550 mA f = 940 MHz EDGE Modulation
8
6
60
4
D EVM
40
2 25_C 0 1 10 Pout, OUTPUT POWER (WATTS) AVG. -30_C
20
0 100
D, DRAIN EFFICIENCY (%)
VDD = 26 Vdc IDQ = 600 mA f = 940 MHz EDGE Modulation
TC = 85_C
80
Figure 9. EVM and Drain Efficiency versus Output Power
Figure 10. Spectral Regrowth at 400 kHz and 600 kHz versus Frequency
-45 SPECTRAL REGROWTH @ 400 kHz (dBc) SPECTRAL REGROWTH @ 600 kHz (dBc) -50 -55 -60 -65 -70 -75 -80 0 20 40 60 80 100 Pout, OUTPUT POWER (WATTS) AVG. VDD = 26 Vdc IDQ = 600 mA f = 940 MHz EDGE Modulation TC = 85_C -30_C 25_C
-55 -60 -65 -70 -75 -80 -85 0 20 40 60 80 100 Pout, OUTPUT POWER (WATTS) AVG. VDD = 26 Vdc IDQ = 600 mA f = 940 MHz EDGE Modulation TC = 85_C 25_C -30_C
Figure 11. Spectral Regrowth @ 400 kHz versus Output Power MRF5S9080NR1 MRF5S9080NBR1 6
Figure 12. Spectral Regrowth @ 600 kHz versus Output Power
RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
1.E+09 MTTF FACTOR (HOURS X AMPS2)
1.E+08
1.E+07 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application.
Figure 13. MTTF Factor versus Junction Temperature
GSM TEST SIGNAL
-10 -20 -30 -40 -50 (dB) -60 -70 -80 -90 -100 -110 Center 1.96 GHz 200 kHz Span 2 MHz 400 kHz 600 kHz 400 kHz 600 kHz Reference Power VBW = 30 kHz Sweep Time = 70 ms RBW = 30 kHz
Figure 14. EDGE Spectrum
MRF5S9080NR1 MRF5S9080NBR1 RF Device Data Freescale Semiconductor 7
f = 990 MHz Zload
f = 845 MHz
f = 990 MHz
Zsource f = 845 MHz
Zo = 10
VDD = 26 Vdc, IDQ = 600 mA, Pout = 80 W CW f MHz 845 865 890 920 960 990 Zsource 5.31 - j5.59 6.07 - j4.16 5.05 - j1.99 3.47 - j0.81 2.64 - j0.88 1.89 - j1.14 Zload 1.18 - j0.34 1.09 - j0.29 1.22 - j0.29 1.10 - j0.21 1.05 - j0.15 0.91 - j0.18
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 15. Series Equivalent Source and Load Impedance -- 900 MHz
MRF5S9080NR1 MRF5S9080NBR1 8 RF Device Data Freescale Semiconductor
R1 VBIAS C1 R2 C4 C7 Z12 Z6 C8 C5 C2 + C21
VSUPPLY
R3 RF INPUT
C16 Z7
C18 Z8 Z9 Z10 C11 Z11
RF OUTPUT
Z1
Z2 C10 C12
Z3
Z4
Z5 C15 DUT C17 C19 C20
C13
C14 Z13
+ C9 C6 C3 C22
Z1 Z2 Z3 Z4 Z5 Z6 Z7
1.220 x 0.087 Microstrip 1.110 x 0.087 Microstrip 0.536 x 0.087 Microstrip 0.310 x 0.087 Microstrip 0.430 x 0.591 Microstrip 1.567 x 0.059 Microstrip 0.734 x 0.788 Microstrip
Z8 Z9 Z10 Z11 Z12, Z13 PCB
0.138 x 0.087 Microstrip 0.411 x 0.087 Microstrip 0.403 x 0.087 Microstrip 0.560 x 0.087 Microstrip 1.693 x 0.087 Microstrip Taconic TLX8 - 0300, 0.030, r = 2.55
Figure 16. MRF5S9080NR1(NBR1) Test Circuit Schematic -- 800 MHz
Table 7. MRF5S9080NR1(NBR1) Test Circuit Component Designations and Values -- 800 MHz
Part C1, C2, C3 C4, C5, C6 C7, C8, C9 C10, C11 C12 C13 C14, C17, C18 C15, C16 C19 C20 C21, C22 R1, R2 R3 Description 4.7 F Chip Capacitors (1812) 10 nF 200B Chip Capacitors 33 pF 600B Chip Capacitors 22 pF 600B Chip Capacitors 1.8 pF 600B Chip Capacitor 9.1 pF 600B Chip Capacitor 8.2 pF 600B Chip Capacitors 10 pF 600B Chip Capacitors 4.7 pF 600B Chip Capacitor 3.6 pF 600B Chip Capacitor 220 F, 50 V Electrolytic Capacitors, Radial 10 k, 1/4 W Chip Resistors (1206) 10 , 1/4 W Chip Resistor (1206) Part Number C4532X5R1H475MT 200B103MW 600B330JW 600B220FW 600B1R8BW 600B9R1BW 600B8R2BW 600B100FW 600B4R7BW 600B3R6BW 678D227M050DM3D Manufacturer TDK ATC ATC ATC ATC ATC ATC ATC ATC ATC Vishay
MRF5S9080NR1 MRF5S9080NBR1 RF Device Data Freescale Semiconductor 9
VGG
C4 C7
C8
C5
VDD
C1
R1
R2
C21
C2
R3 CUT OUT AREA C10 C12 C13 C14
C16
C18
C19 C20
C11
C15
C17
C22 C3
C9
C6
MRF5S9080N/NB Rev. 1
Figure 17. MRF5S9080NR1(NBR1) Test Circuit Component Layout -- 800 MHz
MRF5S9080NR1 MRF5S9080NBR1 10 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS - 800 MHz
20 19 Gps, POWER GAIN (dB) 18 Gps 17 16 15 IRL VDD = 26 Vdc IDQ = 600 mA 840 860 880 900 920 940 20 0 -20 -40 f, FREQUENCY (MHz) D 80 60 40 D, DRAIN EFFICIENCY (%) IRL, INPUT RETURN LOSS (dB) D, DRAIN EFFICIENCY (%) IRL, INPUT RETURN LOSS (dB)
14 820
Figure 18. Power Gain, Input Return Loss and Drain Efficiency versus Frequency @ Pout = 80 Watts
22 60
D
Gps, POWER GAIN (dB)
20 Gps 18
40
20
16
IRL
0
14 VDD = 26 Vdc IDQ = 600 mA 12 820
-20
-40 840 860 880 900 920 940 f, FREQUENCY (MHz)
Figure 19. Power Gain, Input Return Loss and Drain Efficiency versus Frequency @ Pout = 36 Watts
5 Pout = 50 W Avg. 4 7 6 5 4 D 3 EVM 2 TC = 25_C 1 0 870 880 890 900 910 1 10 Pout, OUTPUT POWER (WATTS) AVG. f, FREQUENCY (MHz) 20 10 0 100 30 VDD = 28 Vdc IDQ = 550 mA f = 880 MHz EDGE Modulation
EVM, ERROR VECTOR MAGNITUDE (% rms)
EVM, ERROR VECTOR MAGNITUDE (% rms)
70 60 50 40 D, DRAIN EFFICIENCY (%)
3 20 W Avg. 2 5 W Avg. 1 VDD = 28 Vdc IDQ = 550 mA 850 860
0
Figure 20. EVM versus Frequency
Figure 21. EVM and Drain Efficiency versus Output Power
MRF5S9080NR1 MRF5S9080NBR1 RF Device Data Freescale Semiconductor 11
TYPICAL CHARACTERISTICS - 800 MHz
SPECTRAL REGROWTH @ 400 kHz and 600 kHz (dB -50 Pout = 50 W Avg. -55 -60 -65 -70 -75 -80 -85 840 850 860 870 880 890 900 910 920 f, FREQUENCY (MHz) SR @ 600 kHz 50 W Avg. 5 W Avg. 20 W Avg. SR @ 400 kHz VDD = 28 Vdc IDQ = 550 mA f = 880 MHz EDGE Modulation SPECTRAL REGROWTH @ 400 kHz (dBc) -45 -50 -55 -60 -65 -70 -75 1 10 Pout, OUTPUT POWER (WATTS) AVG. 100 VDD = 28 Vdc IDQ = 550 mA f = 880 MHz EDGE Modulation
TC = 25_C
20 W Avg.
5 W Avg.
Figure 22. Spectral Regrowth at 400 kHz and 600 kHz versus Frequency
Figure 23. Spectral Regrowth @ 400 kHz versus Output Power
-65 SPECTRAL REGROWTH @ 600 kHz (dBc) VDD = 28 Vdc IDQ = 550 mA f = 880 MHz EDGE Modulation
-70
-75 TC = 25_C -80
-85 1 10 Pout, OUTPUT POWER (WATTS) AVG. 100
Figure 24. Spectral Regrowth @ 600 kHz versus Output Power
MRF5S9080NR1 MRF5S9080NBR1 12 RF Device Data Freescale Semiconductor
NOTES
MRF5S9080NR1 MRF5S9080NBR1 RF Device Data Freescale Semiconductor 13
NOTES
MRF5S9080NR1 MRF5S9080NBR1 14 RF Device Data Freescale Semiconductor
NOTES
MRF5S9080NR1 MRF5S9080NBR1 RF Device Data Freescale Semiconductor 15
PACKAGE DIMENSIONS
B E1 E3
2X
A
GATE LEAD
DRAIN LEAD
D1
4X
D e
4X
aaa
M
b1 CA
D2 c1 H
DATUM PLANE ZONE J
2X
2X
E
F
A1 A2 E2 E5 E4
2X
A
NOTE 7
C
SEATING PLANE
PIN 5
NOTE 8
NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 3. DATUM PLANE -H- IS LOCATED AT THE TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 PER SIDE. DIMENSIONS "D" AND "E1" DO INCLUDE MOLD MISMATCH AND ARE DETER- MINED AT DATUM PLANE -H-. 5. DIMENSION "b1" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 TOTAL IN EXCESS OF THE "b1" DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H-. 7. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY. 8. HATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG. INCHES MIN MAX .100 .104 .039 .043 .040 .042 .712 .720 .688 .692 .011 .019 .600 --- .551 .559 .353 .357 .132 .140 .124 .132 .270 --- .346 .350 .025 BSC .164 .170 .007 .011 .106 BSC .004 DRAIN DRAIN GATE GATE SOURCE MILLIMETERS MIN MAX 2.54 2.64 0.99 1.09 1.02 1.07 18.08 18.29 17.48 17.58 0.28 0.48 15.24 --- 14 14.2 8.97 9.07 3.35 3.56 3.15 3.35 6.86 --- 8.79 8.89 0.64 BSC 4.17 4.32 0.18 0.28 2.69 BSC 0.10
4
D3
3
MRF5S9080NR1 MRF5S9080NBR1 16 RF Device Data Freescale Semiconductor
CCCCCCC CCCCCCC CCCCCCC CCCCCCC CCCCCCC CCCCCCC CCCCCCC CCCCCCC CCCCCCC CCCCCCC CCCCCCC CCCCCCC CCCCCCC
E5 BOTTOM VIEW
1
2
DIM A A1 A2 D D1 D2 D3 E E1 E2 E3 E4 E5 F b1 c1 e aaa
CASE 1486 - 03 ISSUE C TO - 270 WB - 4 PLASTIC MRF5S9080NR1
STYLE 1: PIN 1. 2. 3. 4. 5.
MRF5S9080NR1 MRF5S9080NBR1 RF Device Data Freescale Semiconductor 17
MRF5S9080NR1 MRF5S9080NBR1 18 RF Device Data Freescale Semiconductor
MRF5S9080NR1 MRF5S9080NBR1 RF Device Data Freescale Semiconductor 19
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MRF5S9080NR1 MRF5S9080NBR1
Rev. 20 1, 5/2006 Document Number: MRF5S9080N
RF Device Data Freescale Semiconductor

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