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| PJ09N03D 25V N-Channel Enhancement Mode MOSFET FEATURES * RDS(ON), VGS@10V,IDS@30A=9m * RDS(ON), VGS@4.5V,IDS@30A=16m * Advanced Trench Process Technology * High Density Cell Design For Ultra Low On-Resistance * Specially Designed for DC/DC Converters and Motor Drivers * Fully Characterized Avalanche Voltage and Current * Pb free product : 99% Sn above can meet RoHS environment substance directive request MECHANICALDATA * Case: TO-252 Molded Plastic * Terminals : Solderable per MIL-STD-750D,Method 1036.3 * Marking : 09N03D Drain Gate Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA M E TE R D r a i n- S o ur c e Vo l t a g e G a t e - S o ur c e Vo l t a g e C o nt i nuo us D r a i n C ur r e nt P ul s e d D r a i n C ur r e nt 1) S ym b o l V DS V GS ID ID M T A = 2 5 OC T A = 7 5 OC PD T J , T S TG E AS RJC RJA Li mi t 25 +20 50 240 52 31 -5 5 to + 1 5 0 180 2 .4 50 U ni t s V V A A W O M a xi m um P o w e r D i s s i p a t i o n O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e Avalanche Energy with Single Pulse ID=27A, VDD=25V, L=0.5mH Junction-to-Case Thermal Resistance Junction-to Ambient Thermal Resistance(PCB mounted)2 C mJ O C /W C /W O Note: 1. Maximum DC current limited by the package 2. Surface mounted on FR4 board, t < 10 sec PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE STAD-JUN.19.2006 PAGE . 1 PJ09N03D ELECTRICALCHARACTERISTICS P a ra me te r S ta ti c D r a i n- S o ur c e B r e a k d o w n Vo l t a g e G a t e Thr e s ho l d Vo l t a g e D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e Ze r o G a t e Vo l t a g e D r a i n C ur r e nt Gate Body Leakage Forward Transconductance D ynami c V D S = 1 5 V , ID = 1 5 A , V G S = 5 V To t a l G a t e C h a r g e Qg G a t e - S o ur c e C ha r g e G a t e - D r a i n C ha r g e Tu r n - O n D e l a y Ti m e Tu r n - O n R i s e Ti m e Tu r n - O f f D e l a y Ti m e Tu r n - O f f F a l l Ti m e In p u t C a p a c i t a n c e O ut p ut C a p a c i t a nc e R e v e r s e Tr a n s f e r C a p a c i t a n c e S o ur c e - D r a i n D i o d e M a x. D i o d e F o r w a r d C ur r e nt D i o d e F o rwa rd Vo lta g e Is V SD IS = 3 0 A , V G S = 0 V 0 .9 1 50 1 .2 A V Qgs Qgd T d ( o n) t rr t d (o ff) tf C iss C oss C rss V D S = 1 5 V , V GS = 0 V f=1 .0 MHZ VDD=15V , RL=15 ID=1A , VGEN=10V RG=3.6 V D S = 1 5 V , ID = 1 5 A V GS = 1 0 V 3 9 .0 6 .0 7 .6 13.0 10.4 4 1 .2 1 3 .4 2100 450 300 nC 14.6 12.4 ns 4 8 .6 1 5 .8 pF 2 2 .1 B V DSS V G S ( t h) R D S ( o n) R D S ( o n) ID S S IG S S g fS V G S = 0 V , ID = 2 5 0 u A V D S = V G S , ID = 2 5 0 u A VGS=4.5V, ID=30A VGS=10V, ID=30A VDS=25V, VGS=0V V GS = + 2 0 V , V D S = 0 V V D S = 1 0 V , ID = 1 5 A 25 1 30 1 2 .5 6.5 3 1 6 .0 m 9.0 1 +100 uA nA S V V S ym b o l Te s t C o n d i t i o n M i n. Ty p . M a x. U ni t s Switching Test Circuit VIN VDD RL VOUT Gate Charge Test Circuit VGS VDD RL RG 1mA RG STAD-JUN.19.2006 PAGE . 2 PJ09N03D Typical Characteristics Curves (TA=25OC,unless otherwise noted) ID - Drain-to-Source Current (A) 80 ID - Drain Source Current (A) 60 V GS = 4.5V, 5.0V, 6.0V, 10.0V V DS=10V 50 40 30 20 10 0 60 4.0V 3.5V 40 T J=25 OC T J=125 OC T J=-55 OC 3 3.5 4 4.5 20 3.0V 0 0 1 2 3 2.5V 4 5 1.5 2 2.5 VDS - Drain-to-Source Voltage (V) V GS - Gate-to-Source Voltage (V) Fig. 1-TYPICAL FORWARD CHARACTERISTIC FIG.1- Output Characteristic FIG.2- Transfer Characteristic 50 30 R DS(ON) - On-Resistance (m W ) 25 20 R DS(ON) - On-Resistance (m W ) ID =30A 40 30 20 10 V GS=4.5V 15 10 5 0 V GS=10V T J=125 OC T J=25 OC 0 0 20 40 60 80 2 4 6 8 10 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) FIG.3- On Resistance vs Drain Current 1.6 FIG.4- On Resistance vs Gate to Source Voltage 3000 RDS(ON) - On-Resistance(Normalized) 1.4 C - Capacitance (pF) V GS=10V I D=30A 2500 2000 1500 1000 Ciss V GS=0V f=1MH Z 1.2 1 Coss 500 Crss 0 0.8 -50 -25 0 25 50 75 100 o 125 150 0 5 10 15 20 25 TJ - Junction Temperature ( C) VDS - Drain-to-Source Voltage (V) FIG.5- On Resistance vs Junction Temperature FIG.6- Capacitance STAD-JUN.19.2006 PAGE . 3 PJ09N03D 10 Vgs Qg V GS - Gate-to-Source Voltage (V) 8 6 4 2 0 V DS =15V I D =15A Vgs(th) Qg(th) Qsw 0 5 10 15 20 25 30 35 40 Qgs Qgd Qg Qg - Gate Charge (nC) Fig.7 - Gate Charge Waveform Vth - G-S Threshold Voltage (NORMALIZED) Fig.8 - Gate Charge 33 32 31 30 29 28 -50 BVDSS - Breakdown Voltage (V) 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 -50 I D =250uA I D =250uA -25 0 25 50 75 100 o 125 150 -25 0 25 50 75 100 o 125 150 TJ - Junction Temperature ( C) TJ - Junction Temperature ( C) Fig.9 - Threshold Voltage vs Temperature Fig.10 - Breakdown Voltage vs Junction Temperature 100 IS - Source Current (A) V GS =0V 10 T J =125 C O T J =25 C O 1 T J =-55 C O 0.1 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD - Source-to-Drain Voltage (V) Fig.11 - Source-Drain Diode Forward Voltage LEGALSTATEMENT Copyright PanJit International, Inc 2006 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. STAD-JUN.19.2006 PAGE . 4 |
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