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| Si4833DY Vishay Siliconix P-Channel 30-V (D-S) MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) -30 rDS(on) (W) 0.085 @ VGS = -10 V 0.180 @ VGS = -4.5 V ID (A) "3.5 "2.5 SCHOTTKY PRODUCT SUMMARY VKA (V) 30 VF (V) Diode Forward Voltage 0.5 V @ 1.0 A IF (A) 1.4 S K SO-8 A A 1 2 3 4 Top View 8 7 6 5 K K D D D A G S G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (TJ = 150_C) (MOSFET)a, b 150 C) Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction)a, b Average Foward Current (Schottky) Pulsed Foward Current (Schottky) Maximum Power Dissipation (MOSFET)a, b Maximum Power Dissipation (Schottky)a, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C TJ, Tstg PD TA = 25_C TA = 70_C Symbol VDS VKA VGS ID IDM IS IF IFM Limit -30 30 "20 "3.5 "2.8 "20 - 1.7 1.4 30 2 1.3 1.9 1.2 -55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (t v 10 sec)a Device MOSFET Schottky MOSFET Schottky Symbol Typical Maximum 62.5 65 Unit RthJA Maximum Junction-to-Ambient (t = steady state)a 90 92 _C/W Notes a. Surface Mounted on FR4 Board. b. t v 10 sec. Document Number: 70796 S-56941--Rev. B, 02-Nov-98 www.vishay.com S FaxBack 408-970-5600 2-1 Si4833DY Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "20 V VDS = -30 V, VGS = 0 V VDS = -30 V, VGS = 0 V, TJ = 55_C VDS w -5 V, VGS = -10 V VGS = -10 V, ID = -2.5 A VGS = -4.5 V, ID = -1.8 A VDS = -10 V, ID = -2.5 A IS = -1.7 A, VGS = 0 V -15 0.066 0.125 5.0 -0.8 -1.2 0.085 0.180 W S V -1.0 "100 -1 -25 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = -1.7 A, di/dt = 100 A/ms VDD = -10 V, RL = 10 W 10 V, ID ^ -1 A, VGEN = -10 V RG = 6 W 1A 10 V, VDS = -10 V VGS = -10 V ID = -2.5 A 10 V, 10 V, 25 8.7 1.9 1.3 7 9 14 8 50 15 18 27 15 80 ns 15 nC C Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Forward Voltage Drop Symbol VF Test Condition IF = 1.0 A IF = 1.0 A, TJ = 125_C Vr = 30 V Min Typ 0.45 0.36 0.004 0.7 3.0 62 Max 0.5 Unit V 0.42 0.100 10 20 pF mA A Maximum R Reverse Leakage Current Mi Lk C Irm Vr = 30 V, TJ = 100_C Vr = -30 V, TJ = 125_C Junction Capacitance CT Vr = 10 V www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 70796 S-56941--Rev. B, 02-Nov-98 Si4833DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 10, 9, 8, 7, 6 V 16 I D - Drain Current (A) I D - Drain Current (A) 5V 12 16 20 TC = -55_C 25_C 125_C 12 MOSFET Transfer Characteristics 8 4V 4 3V 0 0 2 4 6 8 8 4 0 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.40 700 600 r DS(on) - On-Resistance ( W ) 0.32 C - Capacitance (pF) 500 400 300 Capacitance Ciss 0.24 VGS = 4.5 V 0.16 VGS = 10 V 0.08 Coss 200 100 Crss 0 0 3 6 9 12 15 0 0 6 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 10 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 2.5 A Gate Charge 2.0 1.8 r DS(on) - On-Resistance ( W) (Normalized) 1.6 1.4 1.2 1.0 0.8 0.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 2.5 A 8 6 4 2 0 0 2 4 6 8 10 0.4 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 70796 S-56941--Rev. B, 02-Nov-98 www.vishay.com S FaxBack 408-970-5600 2-3 Si4833DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 0.5 MOSFET On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) 10 r DS(on) - On-Resistance ( W ) 0.4 0.3 TJ = 150_C TJ = 25_C 0.2 ID = 2.5 A 0.1 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.8 ID = 250 mA 28 35 Single Pulse Power 0.6 V GS(th) Variance (V) 0.4 Power (W) 21 0.2 14 0.0 7 -0.2 -0.4 -50 0 -25 0 25 50 75 100 125 150 0.01 0.1 Time (sec) 1 10 30 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 90_C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 10-3 10-2 10-1 1 4. Surface Mounted 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 70796 S-56941--Rev. B, 02-Nov-98 Si4833DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Reverse Current vs. Junction Temperature 20 10 I R - Reverse Current (mA) 3 SCHOTTKY Forward Voltage Drop I F - Forward Current (A) 1 1 TJ = 150_C 0.1 20 V 0.01 30 V 10 V 0.1 TJ = 25_C 0.001 0.0001 0 25 50 75 100 125 150 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 TJ - Junction Temperature (_C) VF - Forward Voltage Drop (V) 250 Capacitance CT - Junction Capacitance (pF) 200 150 100 50 0 0 4 8 12 16 20 VKA - Reverse Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 92_C/W t1 t2 Single Pulse 0.01 10-4 10-3 10-2 10-1 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 1 10 100 600 Square Wave Pulse Duration (sec) Document Number: 70796 S-56941--Rev. B, 02-Nov-98 www.vishay.com S FaxBack 408-970-5600 2-5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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